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51. 发明授权

US08256095B2 Method for manufacturing a magneto-resistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US08256095B2
公开(公告)日：2012-09-04
申请号：US12871593
申请日：2010-08-30
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/39 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An example method for manufacturing a magneto-resistance effect element includes forming a free magnetization layer and forming a spacer layer. The spacer layer is formed, for example, by forming a non-magnetic first metallic layer and forming a second metallic layer on a surface of the non-magnetic first metallic layer. A first irradiating process includes irradiating, onto the second metallic layer, first ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr, so as to convert the second metallic layer into an insulating layer and to form a non-magnetic metallic path penetrating through the insulating layer and containing elements of the non-magnetic first metallic layer. A second irradiating process includes irradiating second ions or plasma onto the insulating layer. A non-magnetic third metallic layer is formed on the non-magnetic metallic path.
摘要翻译：用于制造磁阻效应元件的示例性方法包括形成自由磁化层并形成间隔层。间隔层例如通过形成非磁性第一金属层而在非磁性第一金属层的表面上形成第二金属层而形成。第一照射方法包括向第二金属层照射包含氧和氮中的至少一种的第一离子或等离子体以及选自Ar，Xe，He，Ne，Kr中的至少一种，以便将第二金属层形成绝缘层，并且形成穿过绝缘层并且包含非磁性第一金属层的元件的非磁性金属路径。第二照射工艺包括将第二离子或等离子体照射到绝缘层上。非磁性金属层形成在非磁性金属路径上。

52. 发明授权

US08208229B2 Magneto-resistance effect element 有权
标题翻译：磁阻效应元件
公开(公告)号：US08208229B2
公开(公告)日：2012-06-26
申请号：US13243553
申请日：2011-09-23
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08 , H01L43/12 , Y10T428/1121 , Y10T428/1129
摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.
摘要翻译：一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。

53. 发明授权

US07948717B2 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置和磁存储器
公开(公告)号：US07948717B2
公开(公告)日：2011-05-24
申请号：US11898079
申请日：2007-09-07
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , G01R33/093 , G11B2005/0002 , G11C11/16 , H01L43/08 , Y10T428/1107
摘要： A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of the first magnetic layer, the second magnetic layer and the intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.
摘要翻译：磁阻效应元件包括其磁化方向固定的第一磁性层; 磁化方向固定的第二磁性层; 中间层，设置在第一磁性层和第二磁性层之间; 以及一对电极，用于垂直于由第一磁性层，第二磁性层和中间层构成的所得叠层体的膜表面流动电流。中间层包括绝缘部分和含有选自Fe，Co，Ni，Cr中的至少一种的金属部分，金属部分与第一磁性层和第二磁性层接触。

54. 发明授权

US07821748B2 Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory 有权
标题翻译：磁阻效应元件包括阻尼因子调节层，磁阻效应头，磁存储和磁存储器
公开(公告)号：US07821748B2
公开(公告)日：2010-10-26
申请号：US11525076
申请日：2006-09-22
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译：提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

55. 发明授权

US07808747B2 Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁记录/重放装置
公开(公告)号：US07808747B2
公开(公告)日：2010-10-05
申请号：US11702582
申请日：2007-02-06
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/09 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3281 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent.
摘要翻译：磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。

56. 发明授权

US07785662B2 Method for manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US07785662B2
公开(公告)日：2010-08-31
申请号：US11583968
申请日：2006-10-20
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： H05H1/00 , H01F41/00 , H01F41/22
CPC分类号： C23C8/02 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/34 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/42 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F41/305
摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.
摘要翻译：提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。

57. 发明申请

US20090162698A1 Magnetoresistive Effect Element and Manufacturing Method Thereof 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US20090162698A1
公开(公告)日：2009-06-25
申请号：US12086761
申请日：2006-12-20
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： B05D3/06
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3166 , G11B5/398 , G11B5/3983 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.
摘要翻译：磁阻效应元件通过在第一磁性层上形成第一磁性层，包括绝缘层的间隔层和穿过绝缘层并传导电流的导电层，以及第二磁性层，其中一部分用离子，等离子体或热处理，形成间隔层。

58. 发明申请

US20080102315A1 Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element 有权
标题翻译：磁阻效应元件的制造方法以及磁阻效应元件
公开(公告)号：US20080102315A1
公开(公告)日：2008-05-01
申请号：US11822545
申请日：2007-07-06
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
IPC分类号： G11B5/39 , B05D5/12 , H05H1/00
CPC分类号： G11B5/3983 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portion of the insulating layer; and performing a second conversion treatment so as to convert the third metallic layer into the other portion of the insulating and to form the other portion of the metallic layer penetrating through the insulating layer.
摘要翻译：在制造磁阻效应元件的方法中，该磁阻效应元件的磁化强度基本上沿一个方向固定，其中磁化按照外部磁场旋转的自由磁化层和间隔层，位于固定磁化层和自由磁化层之间，绝缘层和穿过绝缘层的金属层位于隔离层之间，形成第一金属层; 在第一金属层上形成第二金属层，以转化成绝缘层的一部分; 进行第一转换处理，以将第二金属层转换成绝缘层的部分，并形成贯穿绝缘层的金属层的一部分; 在绝缘层和通过第一转换处理形成的金属层上形成将被转换成绝缘层的另一部分的第三金属层; 并进行第二转换处理，以将第三金属层转换成绝缘体的另一部分，并形成贯穿绝缘层的金属层的另一部分。

59. 发明申请

US20070202249A1 Method for manufacturing magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US20070202249A1
公开(公告)日：2007-08-30
申请号：US11703830
申请日：2007-02-08
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/303 , H01F41/325
摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.
摘要翻译：一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。

60. 发明授权

US08305716B2 Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory 有权
标题翻译：磁阻效应元件包括漫射电子散射层，磁阻效应头，磁存储和磁存储器
公开(公告)号：US08305716B2
公开(公告)日：2012-11-06
申请号：US13360143
申请日：2012-01-27
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/36
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： An example magneto-resistance effect element includes a magnetization layer and a free magnetization layer of which magnetization direction changes depending on an external magnetic field. A spacer layer is located between the magnetization layer and the free magnetization layer, and has an insulating layer and an electric conductor passing current therethrough in a layer direction of the insulating layer. A diffusive electron scattering layer is disposed on said free magnetization layer for scattering diffusive electrons. The scattering layer includes a first nonmagnetic layer and a second nonmagnetic layer containing a first element and a second element, respectively, and a mixing layer disposed at a boundary between the first and second nonmagnetic layers and containing the first and second elements. The mixing layer has a thickness of 0.5 nm or more and 1.5 nm or less.
摘要翻译：示例性的磁阻效应元件包括磁化层和磁化方向根据外部磁场而变化的自由磁化层。间隔层位于磁化层和自由磁化层之间，并且在绝缘层的层方向上具有绝缘层和导电体通过其中的电流。漫射电子散射层设置在所述自由磁化层上用于散射漫射电子。散射层包括分别包含第一元件和第二元件的第一非磁性层和第二非磁性层，以及设置在第一和第二非磁性层之间并且包含第一和第二元件的边界处的混合层。混合层的厚度为0.5nm以上且1.5nm以下。

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