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    • 54. 发明授权
    • High-frequency power supply structure and plasma CVD device using the same
    • 高频电源结构和等离子体CVD装置使用相同
    • US07319295B2
    • 2008-01-15
    • US10506544
    • 2003-03-13
    • Hiroshi MashimaKeisuke KawamuraAkemi TakanoYoshiaki TakeuchiTetsuro ShigemizuTatsufumi Aoi
    • Hiroshi MashimaKeisuke KawamuraAkemi TakanoYoshiaki TakeuchiTetsuro ShigemizuTatsufumi Aoi
    • H01J7/24
    • H01J37/32577H01J37/32082
    • A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
    • 提供射频电源结构和包括该射频电源结构的等离子体CVD装置,其中RF电缆连接到电极的连接部分处的射频功率的反射减小,使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中,射频电源结构从RF电缆向射频电源供给射频电力,RF电缆为 位于由电极形成的平面的延伸平面上,以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此,连接部的阻抗变化减小,连接部处的射频功率的反射减小,电极的射频功率的增加,成膜和表面处理的效率提高。
    • 55. 发明授权
    • Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitor
    • 具有与铁电电容器并联连接的本征晶体管的链式铁电随机存取存储器(CFRAM)
    • US07295456B2
    • 2007-11-13
    • US11382098
    • 2006-05-08
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • G11C11/22
    • G11C11/22
    • A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.
    • 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管。 作为板线电压和比较放大的升压期间获得的晶体管中的栅极电压的最小值的值小于在板线掉电期间获得的晶体管中的栅极电压的最大值 电压和比较放大。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。
    • 56. 发明申请
    • Anode and battery, and manufacturing methods thereof
    • 阳极和电池及其制造方法
    • US20060099505A1
    • 2006-05-11
    • US10531248
    • 2003-10-06
    • Takemasa FujinoTakatomo NishinoYoshiaki Takeuchi
    • Takemasa FujinoTakatomo NishinoYoshiaki Takeuchi
    • H01M4/62
    • H01M10/052H01M4/04H01M4/043H01M4/0471H01M4/134H01M4/1395H01M4/38H01M4/386H01M4/387H01M4/405H01M4/621H01M4/623H01M4/624H01M10/0565Y10T29/49115
    • An anode and a battery capable of realizing a high capacity and improving charge and discharge cycle characteristics, and manufacturing methods thereof are provided. An anode active material layer (12) contains a particulate anode active material (12A) including a simple substance or a compound of an element capable of forming an alloy with Li, a particulate binder (12B) including a copolymer of vinylidene fluoride or polyvinylidene fluoride, and a conductive agent (12C). The anode active material layer (12) is formed by using a dispersion medium having a swelling degree of 10% or less to the binder (12B), specifically pure water or the like. The particulate binder (12B) functions as a cushion to absorb expansion and shrinkage of the anode active material (12A) due to charge and discharge, and lowering of electron conductivity caused by generation of cracks or separation is prevented. Further, since the anode active material (12A) is not covered with the binder (12B), electrode reaction is well performed.
    • 提供一种能够实现高容量且提高充放电循环特性的阳极和电池及其制造方法。 负极活性物质层(12)含有包含简单物质或与Li形成合金的元素的化合物的颗粒状负极活性物质(12A),包含偏二氟乙烯或 聚偏二氟乙烯和导电剂(12℃)。 通过使用对粘合剂(12B)具有10%以下的溶胀度的分散介质,特别是纯水等形成阳极活性物质层(12)。 颗粒粘合剂(12B)用作吸收由于充放电引起的负极活性材料(12A)的膨胀和收缩的缓冲垫,并且防止了由裂纹或分离产生引起的电子传导性的降低。 此外,由于负极活性物质(12A)未被粘合剂(12B)覆盖,所以电极反应良好。
    • 59. 发明申请
    • High-frequency power supply structure and plasma cvd device using the same
    • 高频电源结构和等离子cvd设备使用相同
    • US20050127844A1
    • 2005-06-16
    • US10506544
    • 2003-03-13
    • Hiroshi MashimaKeisuke KawamuraAkemi TakanoYoshiaki TakeuchiTetsuro ShigemizuTatsufumi Aoi
    • Hiroshi MashimaKeisuke KawamuraAkemi TakanoYoshiaki TakeuchiTetsuro ShigemizuTatsufumi Aoi
    • C23C16/509H01J37/32H01L21/205H01J7/24
    • H01J37/32577H01J37/32082
    • A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.
    • 提供射频电源结构和包括该射频电源结构的等离子体CVD装置,其中RF电缆连接到电极的连接部分处的射频功率的反射减小,使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中,射频电源结构从RF电缆向射频电源供给射频电力,RF电缆为 位于由电极形成的平面的延伸平面上,以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此,连接部的阻抗变化减小,连接部处的射频功率的反射减小,电极的射频功率的增加,成膜和表面处理的效率提高。
    • 60. 发明授权
    • Asynchronous pseudo SRAM
    • 异步伪SRAM
    • US06891775B2
    • 2005-05-10
    • US10762540
    • 2004-01-23
    • Yoshiaki Takeuchi
    • Yoshiaki Takeuchi
    • G11C11/22G11C5/00G11C7/10G11C8/00G11C8/18G11C11/401G11C11/403G11C11/406
    • G11C11/40615G11C7/1045G11C8/18G11C11/406
    • An ATD circuit for row access, an ATD circuit for column access, and a mode determination circuit which determines which of the row access mode and column access mode is being executed are arranged in a pseudo SRAM. A mode determination signal is automatically generated in the chip to control the internal circuits. Upon detecting column address transition after the start of the cycle and activation of the sense amplifier, the mode determination circuit determines that column access starts. Upon detecting transition of a row address or a predetermined mode address after consecutive transition of the column address, the mode determination circuit determines that the column access mode is ended.
    • 用于行存取的ATD电路,用于列访问的ATD电路和确定正在执行行访问模式和列访问模式中的哪一个的模式确定电路被布置在伪SRAM中。 在芯片中自动产生模式确定信号以控制内部电路。 在检测到循环开始之后的列地址转换和激活读出放大器时,模式确定电路确定列存取开始。 一旦在列地址连续转换之后检测到行地址或预定模式地址的转换,则模式确定电路确定列访问模式结束。