专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08921948B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08921948B2
公开(公告)日：2014-12-30
申请号：US13345795
申请日：2012-01-09
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L27/088 , H01L21/02 , H01L29/786
CPC分类号： H01L27/1288 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/469 , H01L21/477 , H01L27/1214 , H01L27/1259 , H01L27/127 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.
摘要翻译：该半导体器件包括：衬底上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。从源电极的外边缘到漏电极的外边缘的氧化物半导体层的外边缘的一部分的长度是半导体器件的沟道长度的三倍以上，优选大于五倍。此外，通过热处理从栅极绝缘层向氧化物半导体层提供氧。此外，在氧化物半导体层被选择性蚀刻之后形成绝缘层。

52. 发明授权

US08917016B2 Display device and electronic apparatus 有权
标题翻译：显示设备和电子设备
公开(公告)号：US08917016B2
公开(公告)日：2014-12-23
申请号：US13010060
申请日：2011-01-20
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01J1/62 , G09G3/32 , H01L27/32 , G09G3/20 , H01L51/52
CPC分类号： H01L27/283 , G09G3/2022 , G09G3/3233 , G09G2300/0417 , G09G2300/0426 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0251 , G09G2310/0256 , G09G2310/0286 , G09G2320/0223 , G09G2320/043 , H01L27/156 , H01L27/3276 , H01L29/78669 , H01L29/78696 , H01L51/0545 , H01L51/0562 , H01L51/5203
摘要： A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, alight emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer.
摘要翻译：一种显示装置，其中由于晶体管的特性变化导致的亮度变化减小，并且防止了由于电阻值的变化引起的图像质量劣化。本发明包括晶体管，其沟道部分由非晶半导体或有机半导体形成，连接线连接到晶体管的源电极或漏极，具有层叠结构的发光元件包括像素电极，电致发光层和对电极，围绕像素电极的端部的绝缘层和形成在与晶体管，连接布线或像素电极的栅电极相同的层中的辅助布线。此外，连接布线连接到像素电极，并且辅助布线经由设置在绝缘层中的开口部分连接到对电极。

53. 发明授权

US08907881B2 Liquid crystal display device and method for driving the same 有权
标题翻译：液晶显示装置及其驱动方法
公开(公告)号：US08907881B2
公开(公告)日：2014-12-09
申请号：US13078209
申请日：2011-04-01
申请人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
发明人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
IPC分类号： G09G3/38 , G06F3/042 , G06F3/047 , G06F3/044 , G09G3/34 , G02F1/1345 , G09G3/36
CPC分类号： G09G3/3607 , G02F1/13452 , G06F3/042 , G06F3/044 , G06F3/047 , G09G3/3413 , G09G3/3426 , G09G3/3659 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2300/0814 , G09G2310/0205 , G09G2310/0235 , G09G2310/024 , G09G2320/0242
摘要： In the liquid crystal display device, image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion where input of image signals is controlled by transistors including polycrystalline semiconductors or single crystal semiconductors in channel formation regions. Thus, the image quality of the liquid crystal display device can be improved.
摘要翻译：在液晶显示装置中，图像信号被同时提供给像素部分中排列成矩阵的像素中的多个像素中的像素部分，其中图像信号的输入由沟道形成区域中包括多晶半导体或单晶半导体的晶体管控制。因此，可以提高液晶显示装置的图像质量。

54. 发明授权

US08906756B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08906756B2
公开(公告)日：2014-12-09
申请号：US13110314
申请日：2011-05-18
申请人： Shunpei Yamazaki , Ryosuke Watanabe , Suzunosuke Hiraishi , Junichiro Sakata
发明人： Shunpei Yamazaki , Ryosuke Watanabe , Suzunosuke Hiraishi , Junichiro Sakata
IPC分类号： H01L21/00 , H01L21/84 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/477 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
摘要翻译：目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

55. 发明授权

US08900970B2 Method for manufacturing a semiconductor device using a flexible substrate 有权
标题翻译：使用柔性基板制造半导体器件的方法
公开(公告)号：US08900970B2
公开(公告)日：2014-12-02
申请号：US11735009
申请日：2007-04-13
申请人： Junya Maruyama , Yasuhiro Jinbo , Hironobu Shoji , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Junya Maruyama , Yasuhiro Jinbo , Hironobu Shoji , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L21/78 , H01L51/00 , H01L27/12 , H01L23/64 , G06K19/077 , H01L23/66 , G02F1/167 , H01L23/498 , G02F1/136
CPC分类号： H01L21/7806 , G02F1/167 , G02F2001/13613 , G06K19/07749 , H01L23/49855 , H01L23/645 , H01L23/66 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L51/003 , H01L51/0097 , H01L2223/6677 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A technique for peeling an element manufactured through a process at relatively low temperature (lower than 500° C.) from a substrate and transferring the element to a flexible substrate (typically, a plastic film). With the use of an existing manufacturing device for a large glass substrate, a molybdenum film (Mo film) is formed over a glass substrate, an oxide film is formed over the molybdenum film, and an element is formed over the oxide film through a process at relatively low temperature (lower than 500° C.). Then, the element is peeled from the glass substrate and transferred to a flexible substrate.
摘要翻译：一种从基板剥离通过相对较低温度（低于500℃）的工艺制造的元件并将元件转移到柔性基板（通常为塑料膜）的技术。通过使用现有的大型玻璃基板的制造装置，在玻璃基板上形成钼膜（Mo膜），在钼膜上形成氧化膜，通过工序在氧化膜上形成元件在相对较低的温度（低于500℃）。然后，将元件从玻璃基板剥离并转移到柔性基板。

56. 发明授权

US08884845B2 Display device and telecommunication system 有权
标题翻译：显示设备和电信系统
公开(公告)号：US08884845B2
公开(公告)日：2014-11-11
申请号：US10952163
申请日：2004-09-29
申请人： Shunpei Yamazaki , Keisuke Miyagawa
发明人： Shunpei Yamazaki , Keisuke Miyagawa
IPC分类号： G09G5/00 , G02B27/01 , G01C21/36 , G09G3/32 , H04N5/74
CPC分类号： G02B27/0172 , G01C21/365 , G02B27/017 , G02B2027/0112 , G02B2027/0132 , G02B2027/014 , G02B2027/0178 , G09G3/3225 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , H04N5/7491
摘要： The invention provides a display device with which a user's view is not completely interrupted by an image that is displayed artificially and of which optical system is easy in design. In addition, the invention provides a telecommunication system capable of providing additional visual information by the use of the display device. According to the invention, an image can be displayed while securing a user's view by using a light emitting device that can display an image and transmit light as a display device. Specifically, a pair of electrodes included in a light emitting element is formed to transmit light so as to transmit the outside light. By crossing a visual axis of a user and a pixel portion of the light emitting device, both of the outside light and the light emitted from the pixel portion can enter into the eyeballs of a user.
摘要翻译：本发明提供了一种显示装置，用户的视野不被人为地显示的图像完全中断，并且哪个光学系统在设计上容易。此外，本发明提供一种能够通过使用显示装置提供附加视觉信息的电信系统。根据本发明，可以通过使用可以显示图像并发送光作为显示装置的发光装置来确保用户的视野来显示图像。具体地，形成发光元件中包括的一对电极以透射光以透射外部光。通过横穿用户的视轴和发光器件的像素部分，外部光和从像素部分发射的光都可以进入用户的眼球。

57. 发明授权

US08860108B2 Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other 有权
标题翻译：具有一个晶体管的源极/漏极的另一个的栅电极的基于氧化物的薄膜晶体管（TFT）半导体存储器件
公开(公告)号：US08860108B2
公开(公告)日：2014-10-14
申请号：US12912190
申请日：2010-10-26
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/088 , G11C11/404 , G11C11/405 , G11C16/02 , H01L27/0207 , H01L27/1052 , H01L27/115 , H01L27/11517 , H01L27/1156 , H01L27/1225
摘要： It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.
摘要翻译：本发明的目的是提供具有新颖结构的半导体。在半导体器件中，多个存储器元件串联连接，并且多个存储元件中的每一个包括第一至第三晶体管，从而形成存储器电路。包括氧化物半导体层的第一晶体管的源极或漏极与第二和第三晶体管之一的栅极电接触。含有氧化物半导体层的第一晶体管的极低的截止电流允许长时间地在第二和第三晶体管之一的栅电极中存储电荷，由此可以获得基本上永久的记忆效应。不含氧化物半导体层的第二和第三晶体管在使用存储电路时允许高速操作。

58. 发明授权

US08860030B2 Thin film transistor and display device including the same 有权
标题翻译：薄膜晶体管和包括其的显示装置
公开(公告)号：US08860030B2
公开(公告)日：2014-10-14
申请号：US13166871
申请日：2011-06-23
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/06 , H01L29/10 , H01L31/00 , H01L29/786 , H01L29/49 , H01L27/12 , H01L29/45
CPC分类号： H01L29/78684 , H01L27/1214 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement of image quality of the display device including the thin film transistor. The thin film transistor includes a semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or a conductive film which is provided over a gate electrode with the gate insulating film interposed therebetween and which is provided in an inner region of the gate electrode so as not to overlap with an end portion of the gate electrode, a film covering at least a side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film, a pair of wirings formed over the film covering the side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film.
摘要翻译：本发明的一个目的是减少薄膜晶体管的截止电流。本发明的另一个目的是提高薄膜晶体管的电特性。此外，本发明的另一个目的是提高包括薄膜晶体管的显示装置的图像质量。该薄膜晶体管包括含有浓度大于或等于5atm的锗的半导体膜。％且小于或等于100at。％或导电膜，其设置在栅极电极上，栅极绝缘膜介于其间并且设置在栅电极的内部区域中，以便不与栅电极的端部重叠，至少覆盖膜该半导体膜的侧表面含有浓度大于或等于5atm的锗。％且小于或等于100at。％或导电膜，形成在覆盖半导体膜的侧面的膜上的一对布线，该半导体膜含有浓度大于或等于5at 3的锗。％且小于或等于100at。％或导电膜。

59. 发明授权

US08854593B2 Electro-optical device 有权
标题翻译：电光装置
公开(公告)号：US08854593B2
公开(公告)日：2014-10-07
申请号：US13278219
申请日：2011-10-21
申请人： Yoshiharu Hirakata , Takeshi Nishi , Shunpei Yamazaki
发明人： Yoshiharu Hirakata , Takeshi Nishi , Shunpei Yamazaki
IPC分类号： G02F1/1339 , H01L27/12 , G02F1/1345
CPC分类号： G02F1/13454 , G02F1/1339 , H01L27/12 , H01L27/1214 , H01L27/1248
摘要： In an active matrix semiconductor display device in which pixel TFTs and driver circuit TFT are formed on the same substrate in an integral manner, the cell gap is controlled by gap retaining members that are disposed between a pixel area and driver circuit areas. This makes it possible to provide a uniform cell thickness profile over the entire semiconductor display device. Further, since conventional grainy spacers are not used, stress is not imposed on the driver circuit TFTs when a TFT substrate and an opposed substrate are bonded together. This prevents the driver circuit TFTs from being damaged.
摘要翻译：在其中像素TFT和驱动电路TFT以整体方式形成在同一基板上的有源矩阵半导体显示装置中，通过设置在像素区域和驱动电路区域之间的间隙保持构件来控制单元间隙。这使得可以在整个半导体显示装置上提供均匀的电池厚度分布。此外，由于不使用常规的颗粒状间隔物，当TFT基板和相对的基板接合在一起时，驱动电路TFT不施加应力。这防止驱动电路TFT被损坏。

60. 发明授权

US08847220B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08847220B2
公开(公告)日：2014-09-30
申请号：US13543109
申请日：2012-07-06
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region and a semiconductor device including the transistor are provided. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer containing an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and a rare earth element can be used.
摘要翻译：包括氧化物半导体的半导体器件可以具有稳定的电特性和高可靠性。使用其中含有铟，钛和锌的氧化物半导体层用作沟道形成区域的晶体管和包括晶体管的半导体器件。作为与氧化物半导体层接触的缓冲层，可以使用含有选自钛，铝，镓，锆，铪和稀土元素中的一种或多种元素的氧化物的金属氧化物层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式