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51. 发明申请

US20060017064A1 Nitride-based transistors having laterally grown active region and methods of fabricating same 审中-公开
公开(公告)号：US20060017064A1
公开(公告)日：2006-01-26
申请号：US10899215
申请日：2004-07-26
申请人： Adam Saxler , Scott Sheppard , Richard Smith
发明人： Adam Saxler , Scott Sheppard , Richard Smith
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.

52. 发明授权

US06972436B2 High voltage, high temperature capacitor and interconnection structures 有权
标题翻译：高压，高温电容器和互连结构
公开(公告)号：US06972436B2
公开(公告)日：2005-12-06
申请号：US09878442
申请日：2001-06-11
申请人： Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Scott Sheppard , Helmut Hagleitner
发明人： Mrinal Kanti Das , Lori A. Lipkin , John W. Palmour , Scott Sheppard , Helmut Hagleitner
IPC分类号： H01L29/749 , H01G4/33 , H01L21/02 , H01L21/04 , H01L21/28 , H01L21/314 , H01L21/329 , H01L21/336 , H01L21/338 , H01L21/822 , H01L27/04 , H01L27/08 , H01L29/06 , H01L29/12 , H01L29/161 , H01L29/24 , H01L29/40 , H01L29/51 , H01L29/739 , H01L29/78 , H01L29/812 , H01L29/861 , H01L29/94 , H01L31/0312 , H01L29/76
CPC分类号： H01L29/7802 , H01G4/1272 , H01G4/20 , H01G4/33 , H01L21/045 , H01L21/049 , H01L27/0805 , H01L28/40 , H01L29/1608 , H01L29/408 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/78 , H01L29/8611 , H01L29/94
摘要： Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
摘要翻译：提供了碳化硅的电容器和互连结构，其具有氧化物层，电介质材料层和介电材料层上的第二氧化物层。氧化物层的厚度可以是氧化物层的厚度和电介质材料层的约0.5至约33％。还提供了具有氧氮化硅层作为电介质结构的碳化硅的电容器和互连结构。这种介电结构可以在金属层之间，以提供金属 - 绝缘体 - 金属电容器，或者可以用作互连结构的金属间介质，从而提供具有改善的平均故障时间的装置和结构。还提供了制造这种电容器和结构的方法。

53. 发明授权

US08563372B2 Methods of forming contact structures including alternating metal and silicon layers and related devices 有权
标题翻译：形成接触结构的方法，包括交替的金属和硅层以及相关器件
公开(公告)号：US08563372B2
公开(公告)日：2013-10-22
申请号：US12704013
申请日：2010-02-11
申请人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
发明人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
IPC分类号： H01L21/338
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体层，以及在所述半导体层上提供第一金属的第一层。可以在第一金属的第一层上提供第二层。第二层可以包括硅层和第二金属层，第一和第二金属可以不同。第一金属可以是钛，第二金属可以是镍。还讨论了相关设备，结构和其他方法。

54. 发明授权

US08200809B2 Traffic analysis for a lawful interception system 有权
标题翻译：合法拦截系统的交通分析
公开(公告)号：US08200809B2
公开(公告)日：2012-06-12
申请号：US12062193
申请日：2008-04-03
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： G06F15/173 , G06F17/00 , H04L29/06
CPC分类号： H04L63/30 , H04L43/00
摘要： Methods, systems, and computer-readable media provide for analyzing data traffic captured by a lawful interception system. A first record, one or more intermediate records, and a second record are received. Each of the records contains a record of test traffic, such as a website, transmitted across a broadband network. The first record, the one or more intermediate records, and the second record are reassembled to form various versions of the website. The various versions of the website are displayed so that a visual comparison can be made to verify the operation of the lawful interception system.
摘要翻译：方法，系统和计算机可读介质提供分析由合法拦截系统捕获的数据流量。接收第一记录，一个或多个中间记录和第二记录。每个记录都包含通过宽带网络传输的测试流量记录，例如网站。重新组合第一个记录，一个或多个中间记录和第二个记录以形成网站的各种版本。显示网站的各种版本，以便进行视觉比较以验证合法拦截系统的操作。

55. 发明申请

US20090237160A1 Switch Mode Power Amplifier Using MIS-HEMT with Field Plate Extension 有权
标题翻译：开关模式功率放大器使用MIS-HEMT与现场板扩展
公开(公告)号：US20090237160A1
公开(公告)日：2009-09-24
申请号：US12474570
申请日：2009-05-29
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H03F3/217
CPC分类号： H01L29/7787 , H01L21/28264 , H01L29/2003 , H01L29/267 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H03F3/189 , H03F3/217 , H03F3/2176
摘要： Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.
摘要翻译：公开了特别适用于开关模式功率放大器的开关模式功率放大器和场效应晶体管。晶体管优选为具有源极端子和漏极端子的复合高电子迁移率晶体管（HEMT），栅极端子位于其间并位于电介质材料上。场板从栅极端子延伸至少两层电介质材料朝向漏极。电介质层优选包括氧化硅和氮化硅。可以提供第三层氧化硅层，该氮化硅层位于氧化硅层之间。蚀刻选择性用于栅极端子的蚀刻凹槽。

56. 发明授权

US07456443B2 Transistors having buried n-type and p-type regions beneath the source region 有权
标题翻译：晶体管在源极区域下方埋有n型和p型区域
公开(公告)号：US07456443B2
公开(公告)日：2008-11-25
申请号：US10996249
申请日：2004-11-23
申请人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
发明人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
IPC分类号： H01L21/00 , H01L29/74
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/02378 , H01L21/0254 , H01L21/02584 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

57. 发明申请

US20080165801A1 Methods, systems and computer program products for importing data from an edge router to a network management system 有权
标题翻译：用于从边缘路由器向网络管理系统导入数据的方法，系统和计算机程序产品
公开(公告)号：US20080165801A1
公开(公告)日：2008-07-10
申请号：US11649481
申请日：2007-01-04
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H04J3/22
CPC分类号： H04L41/0226 , H04L41/0213
摘要： Methods of importing data from an edge router including a plurality of interface types to a network management system include configuring the edge router to export a flat file containing the data at a designated time to a designated network device communicatively coupled to the edge router. The flat file includes data associated with a plurality of different ones of the interface types. The flat file is received at the designated network device. The data from the received flat file is parsed to a format configured to be imported by the network management system at the designated network device. The parsed data is provided to the network management system.
摘要翻译：从包括多个接口类型的边缘路由器将数据导入到网络管理系统的方法包括配置边缘路由器以将指定时间内包含数据的平面文件导出到通信地耦合到边缘路由器的指定网络设备。平面文件包括与多个不同接口类型相关联的数据。在指定的网络设备处接收平面文件。来自接收到的平面文件的数据被解析为被配置为由网络管理系统在指定网络设备处导入的格式。解析的数据被提供给网络管理系统。

58. 发明申请

US20070164321A1 Methods of fabricating transistors including supported gate electrodes and related devices 有权
标题翻译：制造包括支撑的栅电极和相关器件的晶体管的方法
公开(公告)号：US20070164321A1
公开(公告)日：2007-07-19
申请号：US11333726
申请日：2006-01-17
申请人： Scott Sheppard , Scott Allen
发明人： Scott Sheppard , Scott Allen
IPC分类号： H01L29/80 , H01L21/338
CPC分类号： H01L29/7787 , H01L29/1608 , H01L29/2003 , H01L29/66462
摘要： Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate electrode is spaced apart from the protective layer and laterally extends beyond the first portion. Related devices. and fabrication methods are also discussed.
摘要翻译：通过在基板上形成具有贯穿其中的开口的保护层制造晶体管，并在开口中形成栅电极。栅电极的第一部分横向延伸在开口外部的保护层的表面部分上，并且栅电极的第二部分与保护层间隔开并横向延伸超过第一部分。相关设备并讨论了制作方法。

59. 发明申请

US20070164315A1 Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same 有权
标题翻译：包括用于氮化物的晶体管的氮化铝的盖层及其制造方法
公开(公告)号：US20070164315A1
公开(公告)日：2007-07-19
申请号：US11684747
申请日：2007-03-12
申请人： Richard Smith , Adam Saxler , Scott Sheppard
发明人： Richard Smith , Adam Saxler , Scott Sheppard
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/66462 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

60. 发明申请

US20070018199A1 Nitride-based transistors and fabrication methods with an etch stop layer 审中-公开
标题翻译：基于氮化物的晶体管和具有蚀刻停止层的制造方法
公开(公告)号：US20070018199A1
公开(公告)日：2007-01-25
申请号：US11185398
申请日：2005-07-20
申请人： Scott Sheppard , Andrew Mackenzie , Scott Allen , Richard Smith
发明人： Scott Sheppard , Andrew Mackenzie , Scott Allen , Richard Smith
IPC分类号： H01L31/00
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L29/802 , H01L2924/13064
摘要： A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.
摘要翻译： III型氮化物场效应晶体管，特别是HEMT，包括沟道层，沟道层上的势垒层，覆盖层上的蚀刻停止层，蚀刻停止层上的介电层，延伸到阻挡层和栅极接触。蚀刻停止层可以通过不将阻挡层暴露于干蚀刻来减少与形成凹陷栅的相关的损伤。去除凹槽中的蚀刻停止层，剩余的蚀刻停止层用作钝化层。

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