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    • 53. 发明授权
    • Manufacturing method of a junction gate field effect transistor
    • 结栅场效应晶体管的制造方法
    • US5141880A
    • 1992-08-25
    • US669080
    • 1991-03-12
    • Yasuo InoueHiroaki Morimoto
    • Yasuo InoueHiroaki Morimoto
    • H01L21/265H01L21/20H01L21/337H01L29/808
    • H01L29/66901H01L21/2022
    • In a manufacturing method of a junction gate field effect transistor, impurities of a first conductivity type are first implanted at a predetermined concentration into a monocrystal silicon layer separately formed on a region to be used as an active region in an insulating layer, and then surfaces of the monocrystal silicon layer and an insulating substrate are covered with a silicon oxide film. Then, impurities of a second conductivity type are implanted at a predetermined concentration into a portion to be used as a gate electrode in a monocrystal silicon layer by a focused ion beam method, and metal ions are implanted at a predetermined concentration into a portion to be used as a gate electrode of the silicon oxide film covering the monocrystal silicon layer by the focused ion beam method. Then, a polycrystal silicon gate electrode doped with impurities and having an area larger than the portion to be used as the gate electrode of the silicon oxide film is formed to cover a surface of the portion to be used as the gate electrode. Thereafter, impurities of the second conductivity type are implanted at a predetermined concentration into the monocrystal silicon layer, using this polycrystal silicon gate electrode as a mask, to form a source region and a drain region.
    • 在结栅场效应晶体管的制造方法中,首先以预定浓度将第一导电类型的杂质注入到在绝缘层中用作有源区的区域上分开形成的单晶硅层中,然后将表面 的单晶硅层和绝缘基板被氧化硅膜覆盖。 然后,通过聚焦离子束法将第二导电类型的杂质以预定浓度注入到用于单晶硅层中的栅电极的部分中,并将金属离子以预定浓度注入到一部分中 用作通过聚焦离子束法覆盖单晶硅层的氧化硅膜的栅电极。 然后,形成掺杂杂质并且具有比用作氧化硅膜的栅电极的部分的面积大的多晶硅栅电极,以覆盖用作栅电极的部分的表面。 此后,使用该多晶硅栅电极作为掩模,将第二导电类型的杂质以预定浓度注入到单晶硅层中,以形成源极区和漏极区。
    • 55. 发明授权
    • Stress evaluation apparatus
    • 压力评估仪
    • US4812036A
    • 1989-03-14
    • US132618
    • 1987-11-23
    • Yasuo Inoue
    • Yasuo Inoue
    • G01L1/00G01L1/24G01N21/65G01B11/16G01J3/44
    • G01L1/24
    • A stress evaluation apparatus for evaluating stress existing in a substance by difference between peak wave numbers of Raman spectra of scattered light comprises a light source for emitting excitation light, an entrance optical system for guiding the excitation light to measuring points of a substance to be evaluated, a scatter optical system for focusing scattered light from the measuring points, a spectroscope for spectro-analyzing the scattered light, a detector for detecting Raman spectra of the spectro-analyzed scattered light, an output controller for changing temperatures of the measuring points and a microcomputer for measuring peak wave numbers of the Raman spectra and statistically processing the same to thereafter obtain a peak wave number at a prescribed reference value. The output controller is adapted to change the temperatures of the measuring points of the substance to be evaluated. A plurality of peak wave numbers are measured by the microcomputer as those varied with temperature change of each measuring point, and the measured values are statistically processed per measuring point. Thereafter the microcomputer decides relation between temperature change of each measuring point and the variation of the peak wave numbers, thereby to obtain the peak wave number at the prescribed reference value.
    • 用于通过散射光的拉曼光谱的峰值波峰数之间的差来评估存在于物质中的应力的应力评估装置包括用于发射激发光的光源,用于将激发光引导到待评估物质的测量点的入射光学系统 用于对来自测量点的散射光进行聚焦的散射光学系统,用于对散射光进行光谱分析的分光镜,用于检测光谱分析的散射光的拉曼光谱的检测器,用于改变测量点温度的输出控制器和 用于测量拉曼光谱的峰值波形的微机,并对其进行统计处理,然后获得规定参考值的峰值波数。 输出控制器适于改变待评估物质的测量点的温度。 多个峰值波数由微型计算机测量,随着每个测量点的温度变化而变化,并且每个测量点对测量值进行统计处理。 此后,微计算机确定每个测量点的温度变化与峰值波数的变化之间的关系,从而获得规定参考值的峰值波数。