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51. 发明申请

US20080169459A1 Storage node of a resistive random access memory device and method of manufacturing the same 有权
标题翻译：电阻随机存取存储器件的存储节点及其制造方法
公开(公告)号：US20080169459A1
公开(公告)日：2008-07-17
申请号：US12003136
申请日：2007-12-20
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.
摘要翻译：提供一种电阻随机存取存储器件及其制造方法。电阻随机存取存储器件包括开关器件和连接到开关器件的存储节点，并且存储节点包括第一电极和第二电极以及由Cu 2-X X形成的电阻变化层， O在第一电极和第二电极之间。

52. 发明授权

US07394735B2 Apparatus and method of updating filter tap coefficients of an equalizer 失效
标题翻译：更新均衡器滤波器抽头系数的装置和方法
公开(公告)号：US07394735B2
公开(公告)日：2008-07-01
申请号：US10429954
申请日：2003-05-06
申请人： Jae-seong Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee
发明人： Jae-seong Shim , Hyun-soo Park , Jae-wook Lee , Jung-hyun Lee
IPC分类号： G11B7/004
CPC分类号： G11B20/10009 , G11B20/18
摘要： An apparatus, a method, and a computer readable recording medium thereof to update filter tap coefficients of an equalizer include a defect signal detection unit and a coefficient updating unit. The defect signal detection unit receives a sampled input signal reflected from an optical disc and/or a track jump signal, detects whether the input signal and/or the track jump signal are defective, and outputs an update stop signal indicative thereof. The coefficient updating unit stops the updating of the filter tap coefficients in response to the update stop signal and outputs current filter tap coefficients.
摘要翻译：用于更新均衡器的滤波器抽头系数的装置，方法和计算机可读记录介质包括缺陷信号检测单元和系数更新单元。缺陷信号检测单元接收从光盘反射的采样输入信号和/或轨道跳转信号，检测输入信号和/或轨道跳转信号是否有缺陷，并输出指示其的更新停止信号。系数更新单元响应于更新停止信号停止更新滤波器抽头系数，并输出当前滤波器抽头系数。

53. 发明申请

US20070196984A1 Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same 审中-公开
标题翻译：非挥发性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法
公开(公告)号：US20070196984A1
公开(公告)日：2007-08-23
申请号：US11655191
申请日：2007-01-19
申请人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
发明人： Jung-hyun Lee , Sang-bong Bang , Sang-jun Choi , Bum-seok Seo , Chang-soo Lee
IPC分类号： H01L21/336
CPC分类号： C23C14/46 , C23C14/0052 , C23C14/08 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.
摘要翻译：提供一种非易失性存储器件，层淀积设备和使用其的非易失性存储器件的制造方法。该装置可以包括能够保持基板的室，向基板排出颗粒的颗粒排放目标，以及加速第一多个离子并将加速离子朝向基板照射的第一离子束枪。制造非易失性存储器件的方法可以包括将靶从靶向衬底排放，加速和照射第一多个离子朝向衬底，通过使排出的微粒和加速和照射的第一多个离子反应形成反应产物，以及在所述基板上形成具有沉积层的数据存储层。非易失性存储装置可以包括数据存储层，该数据存储层包括通过使放电的过渡金属颗粒和加速和照射的氧离子反应而形成的过渡金属氧化物层。

54. 发明申请

US20070108433A1 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20070108433A1
公开(公告)日：2007-05-17
申请号：US11650972
申请日：2007-01-09
申请人： Jung-hyun Lee , Young-soo Park , Won-tae Lee
发明人： Jung-hyun Lee , Young-soo Park , Won-tae Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the data storing portion includes a chalcogenide material layer, which undergoes a phase change due to a heating of the heating portion, for storing data therein.
摘要翻译：在半导体存储器件及其制造方法中，具有晶体管和数据存储部分的半导体存储器件包括夹在晶体管和数据存储部分之间的加热部分和连接到数据存储部分的金属互连层，其中所述数据存储部分包括由于所述加热部分的加热而发生相变的硫族化物材料层，用于在其中存储数据。

55. 发明申请

US20070023810A1 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device 审中-公开
标题翻译：具有相同的电容器，半导体器件以及半导体器件的制造方法
公开(公告)号：US20070023810A1
公开(公告)日：2007-02-01
申请号：US11529611
申请日：2006-09-29
申请人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
发明人： Hion-suck Baik , Jung-hyun Lee , Jong-bong Park , Yun-chang Park
IPC分类号： H01L29/94 , H01L27/108 , H01L29/00
CPC分类号： H01L28/75 , H01L21/28556 , H01L27/10852 , H01L27/10855 , H01L28/55 , H01L28/65 , H01L28/90 , H01L28/91
摘要： A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
摘要翻译：提供具有由铝掺杂金属形成的下电极的堆叠型电容器的半导体器件及其制造方法。半导体器件包括：具有栅极结构和有源区的半导体衬底; 形成在有源区上的层间绝缘膜; 在层间电介质膜上由含有铝的金属形成的下电极; 形成在下电极上的电介质层; 形成在电介质层上的上电极; 以及形成在所述层间电介质膜中以将所述有源区电连接到所述下电极的插塞。该方法包括：在半导体衬底上形成栅极结构和有源区; 在所得半导体衬底上形成层间绝缘膜; 在所述层间电介质膜中形成插塞以与所述有源区电连接; 在插塞和层间电介质膜上形成模具氧化层; 以预定图案图案化模具氧化层，并在插头上形成含有铝的材料的下电极; 并且在下电极上依次形成电介质层和上电极。

56. 发明授权

US07135207B2 Chemical vapor deposition method using alcohol for forming metal oxide thin film 有权
公开(公告)号：US07135207B2
公开(公告)日：2006-11-14
申请号：US10355221
申请日：2003-01-31
申请人： Yo-sep Min , Young-jin Cho , Jung-hyun Lee
发明人： Yo-sep Min , Young-jin Cho , Jung-hyun Lee
IPC分类号： C23C16/18
CPC分类号： C23C16/40 , C23C16/45553
摘要： Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with β-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.

57. 发明申请

US20060172229A1 Alignment system used in nano-imprint lithography and nano imprint lithography method using the alignment system 审中-公开
标题翻译：对准系统用于纳米压印光刻和纳米压印光刻法使用对准系统
公开(公告)号：US20060172229A1
公开(公告)日：2006-08-03
申请号：US11340696
申请日：2006-01-27
申请人： Sang-jun Choi , Jung-hyun Lee , Suk-won Lee , Moon-gu Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Suk-won Lee , Moon-gu Lee
IPC分类号： H01L21/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/00
摘要： An alignment system used in nano-imprint lithography and a nano-imprint lithography method using the alignment system are provided. The alignment system includes: a plurality of electron emission devices, which are provided in the mold and emit electrons; and a plurality of electrodes, which are provided to face the electron emission devices and at which the electrons emitted from the electron emission devices arrive. The mold and the substrate are aligned with each other by maximizing the amount of current in each of the electrodes.
摘要翻译：提供了用于纳米压印光刻的对准系统和使用对准系统的纳米压印光刻方法。对准系统包括：多个电子发射装置，其设置在模具中并发射电子; 以及设置成面对电子发射器件并且从电子发射器件发射的电子到达的多个电极。通过使每个电极中的电流量最大化，模具和衬底彼此对准。

58. 发明申请

US20060138393A1 Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer 有权
标题翻译： Ge前体，使用相同的GST薄层，包括GST薄层的相变存储器件，以及制造GST薄层的方法
公开(公告)号：US20060138393A1
公开(公告)日：2006-06-29
申请号：US11253693
申请日：2005-10-20
申请人： Bum-seok Seo , Jung-hyun Lee
发明人： Bum-seok Seo , Jung-hyun Lee
IPC分类号： H01L29/02
CPC分类号： H01L27/2436 , C07F7/10 , C07F7/30 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.
摘要翻译：提供了包含Ge，N和Si的低温沉积的Ge前体，掺杂有使用其形成的N和Si的GST薄层，包括掺杂有N和Si的GST薄层的存储器件，以及制造方法 GST薄层。用于低温沉积的Ge前体包含N和Si，使得Ge前体沉积形成薄层的温度，特别是掺杂有N和Si的GST薄层的温度可以低。此外，在低温沉积期间，可以使用H 2 O 3等离子体。掺杂有由Ge前体形成的用于低温沉积的N和Si的GST相变层具有低复位电流。因此，包含掺杂有N和Si的GST相变层的存储器件可以高度集成，具有高容量，并且可以高速运行。

59. 发明授权

US07061034B2 Magnetic random access memory including middle oxide layer and method of manufacturing the same 失效
标题翻译：包括中间氧化物层的磁性随机存取存储器及其制造方法
公开(公告)号：US07061034B2
公开(公告)日：2006-06-13
申请号：US10830119
申请日：2004-04-23
申请人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
发明人： Sang-jin Park , Tae-wan Kim , Jung-hyun Lee , Wan-jun Park , I-hun Song
IPC分类号： H01L31/062
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/228
摘要： In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
摘要翻译：在单元中具有晶体管和磁隧道结（MTJ）层的磁性随机存取存储器（MRAM）中，MTJ层包括下磁层，防氧化层，隧道氧化物层和上磁层，顺序堆叠。隧道氧化物层可以使用原子层沉积（ALD）方法形成。至少防氧化层可以使用除ALD法以外的方法形成。

60. 发明申请

US20060049447A1 Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device 审中-公开
标题翻译：锑前体，使用锑前驱体的相变记忆体装置以及相变存储装置的制造方法
公开(公告)号：US20060049447A1
公开(公告)日：2006-03-09
申请号：US11219805
申请日：2005-09-07
申请人： Jung-hyun Lee , Young-soo Park , Sung-ho Park
发明人： Jung-hyun Lee , Young-soo Park , Sung-ho Park
IPC分类号： H01L29/76
CPC分类号： C07F9/902 , C23C16/18 , C23C16/45531 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： An antimony precursor including antimony, nitrogen and silicon, a phase-change memory device using the same, and a method of making the phase-change memory device. The phase-change memory device may have a phase-change film of a Ge2—Sb2—Te5 material including nitrogen and silicon.
摘要翻译：包括锑，氮和硅的锑前体，使用该锑前体的相变存储器件以及制造该相变存储器件的方法。相变存储器件可以具有包括氮和硅的Ge 2 -Sb 2 -Te 5-5材料的相变膜。

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