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51. 发明授权

US06278301B1 Circuit and method for modulating the base frequency of a waveform generator 有权
标题翻译：用于调制波形发生器的基频的电路和方法
公开(公告)号：US06278301B1
公开(公告)日：2001-08-21
申请号：US09197095
申请日：1998-11-19
申请人： Roy Clifton Jones, III , Wayne T. Chen , Dave Cotton
发明人： Roy Clifton Jones, III , Wayne T. Chen , Dave Cotton
IPC分类号： H03K3023
CPC分类号： H03K4/06 , H03F3/2173 , H03K3/0231 , H03K7/08
摘要： An improved waveform generator (10) permits digital spectrum spreading by employing circuitry for controlling the charging and discharging of a load capacitor (24) to alter the generator's base frequency. A charge/discharge circuit (22) modulates the currents into the capacitor (24) to effect the slope of the triangle signal waveform (202). A threshold detector (26) determines the amplitude of the base frequency. Switch logic (28) controls an array of 1/N current switches (18) that provide incremental values of a reference source (12) to a summing function (16) which, in turn, feeds a charge/discharge circuit (22). The energy of the triangle waveform (202) remains approximately the same only it is now spread over a range of frequencies with the amplitude of the signal at a given point less than the amplitude of the base.
摘要翻译：改进的波形发生器（10）通过采用用于控制负载电容器（24）的充电和放电的电路来改变发电机的基极频率来允许数字频谱扩展。充电/放电电路（22）调制进入电容器（24）的电流以实现三角波信号波形（202）的斜率。阈值检测器（26）确定基本频率的幅度。开关逻辑（28）控制向参考源（12）提供增量值的1 / N个电流开关（18）的阵列到求和功能（16），该相加功能进而馈送充电/放电电路（22）。三角形波形（202）的能量保持大致相同，只有它现在在频率范围内扩展，信号幅度在给定点小于基极的幅度。

52. 发明授权

US5780905A Asymmetrical, bidirectional triggering ESD structure 失效
标题翻译：不对称，双向触发ESD结构
公开(公告)号：US5780905A
公开(公告)日：1998-07-14
申请号：US768358
申请日：1996-12-17
申请人： Wayne T. Chen , Ross E. Teggatz , Julian Z. Chen
发明人： Wayne T. Chen , Ross E. Teggatz , Julian Z. Chen
IPC分类号： H01L27/02 , H01L23/62
CPC分类号： H01L27/0262
摘要： An ESD protection structure which includes, preferably a single semiconductor chip, a forward SCR for coupling across a source of potential and a reverse SCR for coupling across the same source of potential which is non-symmetrical to the forward SCR. The breakdown voltage of the forward SCR is different from the breakdown voltage of the reverse SCR. Each of the SCRs has a separate triggering mechanism. None of the anode, cathode and triggering elements of the forward SCR are common to the reverse SCR. A unidirectional device, preferably a Schottky diode, is disposed in the body of semiconductor material between the forward and reverse SCRs to prevent conduction from the body of semiconductor material when the source of potential across the SCRs is reversed.
摘要翻译：一种ESD保护结构，其优选地包括单个半导体芯片，用于跨越电位源耦合的正向SCR和用于跨过与正向SCR非对称的相同电位源耦合的反向SCR。正向SCR的击穿电压不同于反向SCR的击穿电压。每个SCR具有单独的触发机制。正向SCR的阳极，阴极和触发元件都不是反向SCR共有的。单向器件（优选肖特基二极管）设置在正向和反向SCR之间的半导体材料体内，以防止当跨越SCR的电位源反向时，半导体材料的主体导电。

53. 发明授权

US5467050A Dynamic biasing circuit for semiconductor device 失效
标题翻译：半导体器件的动态偏置电路
公开(公告)号：US5467050A
公开(公告)日：1995-11-14
申请号：US177811
申请日：1994-01-04
申请人： John S. Clapp, III , Wayne T. Chen
发明人： John S. Clapp, III , Wayne T. Chen
IPC分类号： H01L27/04 , G05F3/20 , H01L21/822 , H03K17/082 , H03K19/096 , G05F1/10 , H03K5/08 , H03K19/084
CPC分类号： G05F3/205 , H03K17/0822
摘要： A dynamic biasing circuit is disclosed that includes a blocking current source (20) having a first current path connected to a first node (NODE 1) and a second current path connected to a second node (NODE 3). A linear source follower (22) has a first current path connected to the second node (NODE 3), a second current path connected to a voltage reference (24), and an input connected to the first node (NODE 1). A parasitic capacitor (26) is connected to the first node (NODE 1) and to ground potential, and a parasitic capacitor (28) is connected to the second node (NODE 3) and to ground potential.
摘要翻译：公开了一种动态偏置电路，其包括具有连接到第一节点（NODE 1）的第一电流路径和连接到第二节点（NODE 3）的第二电流路径）的阻塞电流源（20）。线性源极跟随器（22）具有连接到第二节点（NODE 3）的第一电流路径，连接到电压基准（24）的第二电流路径和连接到第一节点（NODE 1）的输入）。寄生电容器（26）连接到第一节点（NODE 1）和接地电位，寄生电容器（28）连接到第二节点（NODE 3）和接地电位。

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