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    • 51. 发明授权
    • Method for formation of patterned resist layer
    • 图案化抗蚀剂层的形成方法
    • US06255041B1
    • 2001-07-03
    • US09291114
    • 1999-04-14
    • Katsumi OomoriHiroto YukawaRyusuke UchidaKazufumi Sato
    • Katsumi OomoriHiroto YukawaRyusuke UchidaKazufumi Sato
    • G03F726
    • G03F7/38G03F7/0045G03F7/039
    • Disclosed is a method for forming an extremely finely patterned resist layer on a substrate surface by using a positive-working chemical-amplification photoresist composition in the manufacturing process of semiconductor devices. The method for the formation of a patterned resist layer comprises the steps of: (1) forming, on a substrate, a layer of a photoresist composition comprising: (A) a copolymeric resin consisting of (a) from 50 to 85% by moles of hydroxyl group-containing styrene units, (b) from 15 to 35% by moles of styrene units and (c) from 2 to 20% by moles of acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate; (2) subjecting the photoresist layer to a first heat treatment at a temperature in the range from 120° C. to 140° C.; (3) subjecting the photoresist layer to pattern-wise exposure to light; (4) subjecting the photoresist layer to a second heat treatment at a temperature in the range from 110° C. to 130° C. but lower than the temperature of the first heat treatment; and (5) subjecting the photoresist layer to a development treatment.
    • 公开了通过在半导体器件的制造过程中使用正性化学扩增光致抗蚀剂组合物在基板表面上形成极细图案化的抗蚀剂层的方法。 用于形成图案化抗蚀剂层的方法包括以下步骤:(1)在基材上形成光致抗蚀剂组合物层,该层包含:(A)由(a)50-85摩尔% 的含羟基的苯乙烯单元,(b)15〜35摩尔%的苯乙烯单元,和(c)2〜20摩尔%的具有能够除去的溶解性降低基团的丙烯酸酯或甲基丙烯酸酯单元 酸的存在; 和(B)辐射敏感的酸产生剂,其是含有具有1-10个碳原子的氟烷基磺酸根离子作为阴离子的鎓盐,例如双(4-叔丁基苯基)碘鎓九氟丁烷磺酸盐; (2)在120℃至140℃的温度下对光致抗蚀剂层进行第一次热处理; (3)对光致抗蚀剂层进行图案曝光; (4)使光致抗蚀剂层在110℃至130℃的温度下进行第二次热处理,但低于第一次热处理的温度; 和(5)对光致抗蚀剂层进行显影处理。
    • 53. 发明授权
    • Compounds for use in a positive-working resist composition
    • 用于正性抗蚀剂组合物的化合物
    • US5929271A
    • 1999-07-27
    • US912123
    • 1997-08-15
    • Hideo HadaKazufumi SatoHiroshi KomanoToshimasa Nakayama
    • Hideo HadaKazufumi SatoHiroshi KomanoToshimasa Nakayama
    • C07C69/013G03F7/004G03F7/039C07C69/74
    • C07C69/013G03F7/0045G03F7/039Y10S430/115Y10S430/122
    • Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo�3.1.1!heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
    • 提出了用于制造精细电子器件的光刻图案化方法中使用的化学增感正性光致抗蚀剂组合物中的新化合物,其能够赋予ArF准分子激光束具有高光敏性的图案化抗蚀剂层,其具有 具有优异的正交横截面轮廓和高耐干腐蚀性,并且对基材表面表现出良好的粘合性。 虽然组合物包含(A)通过与酸相互作用引起碱溶解度增加的成膜树脂成分和(B)辐射敏感的酸产生剂,但是本发明的最特征在于使用 作为组分(A)的特定丙烯酸树脂,其包含未被取代或被烷基如羟基酮(甲基)丙烯酸酯取代的羟基双环[3.1.1]庚酮的(甲基)丙烯酸酯的单体单元, 与来自(甲基)丙烯酸和/或(甲基)丙烯酸叔丁酯的单体单元组合,摩尔分数为3:7至7:3。