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51. 发明申请

US20130001661A1 HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
标题翻译：具有分级光电转换器的高全能容量像素
公开(公告)号：US20130001661A1
公开(公告)日：2013-01-03
申请号：US13615196
申请日：2012-09-13
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/02
CPC分类号： H01L27/14689 , H01L21/26586 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.
摘要翻译：用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度，形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。公开和要求保护其他实施例。

52. 发明授权

US08278690B2 Laser anneal for image sensors 有权
公开(公告)号：US08278690B2
公开(公告)日：2012-10-02
申请号：US12768319
申请日：2010-04-27
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L27/148
CPC分类号： H01L27/14698 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

53. 发明授权

US08274101B2 CMOS image sensor with heat management structures 有权
标题翻译：具有热管理结构的CMOS图像传感器
公开(公告)号：US08274101B2
公开(公告)日：2012-09-25
申请号：US12852990
申请日：2010-08-09
申请人： Vincent Venezia , Duli Mao , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
发明人： Vincent Venezia , Duli Mao , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14603 , H01L27/1463 , H01L27/1464
摘要： An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.
摘要翻译：图像传感器包括器件晶片的器件晶片衬底，器件晶片的器件层，以及任选的热控结构和/或散热器。器件层设置在器件晶片衬底的前侧，并且包括设置在像素阵列区域内的多个感光元件和设置在外围电路区域内的外围电路。光敏元件对入射到器件晶片衬底背面的光敏感。热控制结构设置在器件晶片衬底内，并且将像素阵列区域与外围电路区域隔离，以减少外围电路区域和像素阵列区域之间的热传递。散热器将热量从器件层传导出去。

54. 发明授权

US08253200B2 Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy 有权
标题翻译：使用选择性外延的图像传感器晶体管的轻掺杂漏极（LDD）
公开(公告)号：US08253200B2
公开(公告)日：2012-08-28
申请号：US12274275
申请日：2008-11-19
申请人： Duli Mao , Hsin-Chih Tai , Howard E. Rhodes , Vincent Venezia , Yin Qian
发明人： Duli Mao , Hsin-Chih Tai , Howard E. Rhodes , Vincent Venezia , Yin Qian
IPC分类号： H01L29/78
CPC分类号： H01L27/14609 , H01L27/14612 , H01L27/14643 , H01L27/14689 , H01L29/6659 , H01L29/66636
摘要： Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.
摘要翻译：本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

55. 发明授权

US08247852B2 Backside illuminated imaging sensor with reinforced pad structure 有权
标题翻译：带加强垫结构的背面照明成像传感器
公开(公告)号：US08247852B2
公开(公告)日：2012-08-21
申请号：US12620437
申请日：2009-11-17
申请人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
发明人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
IPC分类号： H01L31/14
CPC分类号： H01L24/05 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L2224/02165 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327
摘要： A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.
摘要翻译：具有加强垫结构的背面照明成像传感器包括器件层，金属叠层，开口和框架。器件层具有形成在器件层的前侧的成像阵列，并且成像阵列适于从器件层的背面接收光。金属叠层耦合到器件层的前侧，其中金属堆叠包括具有金属焊盘的至少一个金属互连层。开口从器件层的背面延伸到金属焊盘，露出用于引线接合的金属焊盘。框架设置在开口内以在结构上加强金属垫。

56. 发明申请

US20120038014A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM 有权
标题翻译：带压片的背面照明图像传感器
公开(公告)号：US20120038014A1
公开(公告)日：2012-02-16
申请号：US12853803
申请日：2010-08-10
申请人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
发明人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
IPC分类号： H01L27/146 , H01L31/0216
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638
摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
摘要翻译：背面照明（“BSI”）互补金属氧化物半导体（“CMOS”）图像传感器包括设置在半导体层内的感光区域和应力调整层。感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

57. 发明申请

US20120013777A1 CMOS IMAGE SENSOR WITH IMPROVED PHOTODIODE AREA ALLOCATION 有权
标题翻译：具有改进的光电区域分配的CMOS图像传感器
公开(公告)号：US20120013777A1
公开(公告)日：2012-01-19
申请号：US12837870
申请日：2010-07-16
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H04N9/04
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/1464 , H04N9/04
摘要： Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
摘要翻译：包括包括多个宏像素的像素阵列的装置的实施例。每个宏像素包括一对第一像素，每个第一像素包括用于第一颜色的滤色器，第一颜色是像素最敏感的一个，第二像素包括用于第二颜色的滤色器，第二颜色是像素是最不灵敏的，并且第三像素包括用于第三颜色的滤色器，第三颜色是像素在最不灵敏和最敏感之间具有灵敏度的一个，其中第一像素每个占据较大比例的发光元件，大小像素的收集区域比第二像素还是第三像素。公开和要求保护相应的过程和系统实施例。

58. 发明申请

US20110260221A1 LASER ANNEAL FOR IMAGE SENSORS 有权
标题翻译：激光雷达用于图像传感器
公开(公告)号：US20110260221A1
公开(公告)日：2011-10-27
申请号：US12768319
申请日：2010-04-27
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14698 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.
摘要翻译：一种用于制造包括像素电路区域和外围电路区域的图像传感器的技术包括在图像传感器的正面上制造前侧部件。掺杂剂层植入图像传感器的背面。在背面形成防反射层，并且在像素电路区域下方覆盖掺杂剂层的第一部分，同时在外围电路区域下方暴露掺杂剂层的第二部分。掺杂剂层的第一部分通过抗反射层从图像传感器的背面激光退火。抗反射层在激光退火期间增加掺杂剂层的第一部分的温度。

59. 发明申请

US20110095188A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY 有权
标题翻译：具有改进的红外灵敏度的背面照明成像传感器
公开(公告)号：US20110095188A1
公开(公告)日：2011-04-28
申请号：US12984452
申请日：2011-01-04
申请人： Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
发明人： Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H01L27/14652
摘要： A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
摘要翻译：背面照明成像传感器包括半导体层和红外检测层。半导体层具有前表面和后表面。成像像素包括形成在半导体层内的光电二极管区域。红外线检测层设置在半导体层的前表面上方，以从半导体层的背面接收从成像传感器传播的红外光。

60. 发明申请

US20110089517A1 CMOS IMAGE SENSOR WITH HEAT MANAGEMENT STRUCTURES 有权
标题翻译：具有热管理结构的CMOS图像传感器
公开(公告)号：US20110089517A1
公开(公告)日：2011-04-21
申请号：US12852990
申请日：2010-08-09
申请人： Vincent Venezia , Duli Mao , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
发明人： Vincent Venezia , Duli Mao , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14603 , H01L27/1463 , H01L27/1464
摘要： An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.
摘要翻译：图像传感器包括器件晶片的器件晶片衬底，器件晶片的器件层，以及任选的热控结构和/或散热器。器件层设置在器件晶片衬底的前侧，并且包括设置在像素阵列区域内的多个感光元件和设置在外围电路区域内的外围电路。光敏元件对入射到器件晶片衬底背面的光敏感。热控制结构设置在器件晶片衬底内，并且将像素阵列区域与外围电路区域隔离，以减少外围电路区域和像素阵列区域之间的热传递。散热器将热量从器件层传导出去。

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