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51. 发明申请

US20110276292A1 Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit 有权
公开(公告)号：US20110276292A1
公开(公告)日：2011-11-10
申请号：US13066624
申请日：2011-04-20
申请人： Sujit Banerjee , Giao Minh Pham
发明人： Sujit Banerjee , Giao Minh Pham
IPC分类号： G06F19/00
CPC分类号： G01R31/2601 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： In a method for reading a programmable anti-fuse block of a high-voltage integrated circuit a first voltage is applied to a first pin of the HVIC, the first voltage being lowered to a second voltage at a first node. Current is shunted from the first node, thereby lowering the second voltage to a third voltage. An isolation circuit block is then activated to couple the third voltage to a common node of the programmable anti-fuse block, the common node being coupled to a plurality of anti-fuses, each anti-fuse having a programmed state. A read signal is generated that causes a voltage potential representative of the programmed state of each anti-fuse to be latched into a corresponding latch element.

52. 发明申请

US20110272758A1 Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit 有权
标题翻译：集成晶体管和反熔丝作为高压集成电路的编程元件
公开(公告)号：US20110272758A1
公开(公告)日：2011-11-10
申请号：US12800096
申请日：2010-05-07
申请人： Sujit Banerjee , Martin H. Manley
发明人： Sujit Banerjee , Martin H. Manley
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L23/5252 , H01L27/0629 , H01L27/112 , H01L27/11206 , H01L29/0634 , H01L29/0692 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises an N type well region in a P type substrate. A source region of a MOSFET is laterally separated from a boundary of the well region, which comprises the drain of the MOSFET. An insulated gate of the MOSFET extends laterally from the source region to at least just past the boundary of the well region. A polysilicon layer, which forms a first plate of a capacitive anti-fuse, is insulated from an area of the well region, which forms the second plate of the anti-fuse. The anti-fuse is programmed by application of a voltage across the first and second capacitive plates sufficient to destroy at least a portion of the second dielectric layer, thereby electrically shorting the polysilicon layer to the drain of the HVFET. This abstract is provided to allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
摘要翻译：半导体器件包括P型衬底中的N型阱区。 MOSFET的源极区域与阱区域的边界横向分离，阱区域包括MOSFET的漏极。 MOSFET的绝缘栅极从源极区域横向延伸至至少刚好超过阱区域的边界。形成电容性反熔丝的第一板的多晶硅层与形成反熔丝的第二板的阱区的区域绝缘。通过在第一和第二电容板两端施加足以破坏第二电介质层的至少一部分的电压来编程反熔丝，从而将多晶硅层电气短路到HVFET的漏极。提供该摘要以允许搜索者或其他读者快速确定技术公开的主题。

53. 发明授权

US07718075B2 Method for improving the consolidation and dewatering of suspended particulate matter 有权
标题翻译：改善悬浮颗粒物固结和脱水的方法
公开(公告)号：US07718075B2
公开(公告)日：2010-05-18
申请号：US11815962
申请日：2006-02-14
申请人： Sujit Banerjee
发明人： Sujit Banerjee
IPC分类号： C02F1/56 , C02F11/14
CPC分类号： D21H21/02 , D21C9/08 , D21H17/24 , Y10S210/928
摘要： Methods are provided for treating suspensions of particles to improve the drainage rate and/or the solids content of flocs of the particles. The method includes the steps of (i) providing a suspension which comprises particles in a fluid; (ii) adding a cyclodextrin compound to the suspension; and (iii) dewatering the suspension by removing at least a portion of the fluid to form a cake comprising the particles. The cyclodextrin compound desirably is added in an amount effective to increase the dewatering rate of the flocs, to increase the solids content, or both, over that rate, solids content, or both, that would be obtained without the addition of the cyclodextrin compound. The suspension may be, for example, a biological or non-biological sludge, or a suspension of pulp fibers, such as in a pulping or papermaking process.
摘要翻译：提供了用于处理颗粒的悬浮液以改善颗粒的絮状物的排出速率和/或固体含量的方法。该方法包括以下步骤：（i）提供包含流体中的颗粒的悬浮液; （ii）向悬浮液中加入环糊精化合物; 和（iii）通过除去至少一部分流体以形成包含颗粒的滤饼来使悬浮液脱水。环糊精化合物理想地以有效增加絮凝物的脱水速率，增加固体含量或两者的量以相对于不加入环糊精化合物而获得的速率，固体含量或两者的量加入。悬浮液可以是例如生物或非生物污泥或纸浆纤维的悬浮液，例如在制浆或造纸过程中。

54. 发明授权

US07648879B2 High-voltage vertical transistor with a multi-gradient drain doping profile 失效
公开(公告)号：US07648879B2
公开(公告)日：2010-01-19
申请号：US12288883
申请日：2008-10-24
申请人： Sujit Banerjee , Donald Ray Disney
发明人： Sujit Banerjee , Donald Ray Disney
IPC分类号： H01L21/8234
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/66734 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828
摘要： A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

55. 发明申请

US20090061585A1 High-voltage vertical transistor with a multi-gradient drain doping profile 失效
标题翻译：具有多梯度漏极掺杂特性的高压垂直晶体管
公开(公告)号：US20090061585A1
公开(公告)日：2009-03-05
申请号：US12288883
申请日：2008-10-24
申请人： Sujit Banerjee , Donald Ray Disney
发明人： Sujit Banerjee , Donald Ray Disney
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/66734 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828
摘要： A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：高压晶体管包括在半导体衬底中限定台面的第一和第二沟槽。第一和第二场板构件分别设置在第一和第二沟槽中，第一和第二场板构件中的每一个通过介电层与台面分离。台面包括多个部分，每个部分具有基本上恒定的掺杂浓度梯度，一个部分的梯度比另一部分的梯度大至少10％。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

56. 发明授权

US07459366B2 High-voltage vertical transistor with a multi-gradient drain doping profile 失效
公开(公告)号：US07459366B2
公开(公告)日：2008-12-02
申请号：US12004166
申请日：2007-12-19
申请人： Sujit Banerjee , Donald Ray Disney
发明人： Sujit Banerjee , Donald Ray Disney
IPC分类号： H01L21/8234
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66734 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828 , Y10S438/925
摘要： A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

57. 发明申请

US20080149288A1 Method for Altering the Tack of Materials 有权
标题翻译：改变材料粘性的方法
公开(公告)号：US20080149288A1
公开(公告)日：2008-06-26
申请号：US11815005
申请日：2006-02-14
申请人： Sujit Banerjee
发明人： Sujit Banerjee
IPC分类号： D21H17/06
CPC分类号： D21H21/02 , D21C9/08 , D21H17/28
摘要： Methods are provided for altering the tack of an adhesive material by contacting the adhesive material with an amount of a cyclodextrin compound effective to reduce the tack of the adhesive material. In a preferred embodiment, the method is for altering the tack of adhesive contaminants in a process fluid, which includes the steps of providing a process fluid in which are dispersed contaminant particles which comprises one or more adhesive materials (such as pitch, pressure sensitive adhesives, hot melts, latexes, binders, and combinations thereof); and adding to the process an amount of a cyclodextrin compound effective to reduce the tack of the adhesive material. The process fluid can be in a process stream in a pulp and paper mill.
摘要翻译：提供了通过使粘合剂材料与一定量的降低粘合剂材料的粘性的环糊精化合物接触来改变粘合剂材料的粘性的方法。在优选的实施方案中，该方法是改变工艺流体中粘合剂污染物的粘性，其包括提供工艺流体的步骤，其中分散有包含一种或多种粘合剂材料（例如沥青，压敏粘合剂，热熔体，胶乳，粘合剂及其组合）; 并向该过程中加入一定量的有效降低粘合剂材料的粘性的环糊精化合物。工艺流体可以在纸浆和造纸厂中的工艺流中。

58. 发明申请

US20080135194A1 Method for Improving the Consolidation and Dewatering of Suspended Particulate Matter 有权
标题翻译：改善悬浮颗粒物的固化和脱水的方法
公开(公告)号：US20080135194A1
公开(公告)日：2008-06-12
申请号：US11815962
申请日：2006-02-14
申请人： Sujit Banerjee
发明人： Sujit Banerjee
IPC分类号： C02F1/56 , D21C3/20 , D21C9/18
CPC分类号： D21H21/02 , D21C9/08 , D21H17/24 , Y10S210/928
摘要： Methods are provided for treating suspensions of particles to improve the drainage rate and/or the solids content of flocs of the particles. The method includes the steps of (i) providing a suspension which comprises particles in a fluid; (ii) adding a cyclodextrin compound to the suspension; and (iii) dewatering the suspension by removing at least a portion of the fluid to form a cake comprising the particles. The cyclodextrin compound desirably is added in an amount effective to increase the dewatering rate of the flocs, to increase the solids content, or both, over that rate, solids content, or both, that would be obtained without the addition of the cyclodextrin compound. The suspension may be, for example, a biological or non-biological sludge, or a suspension of pulp fibers, such as in a pulping or papermaking process.
摘要翻译：提供了用于处理颗粒的悬浮液以改善颗粒的絮状物的排出速率和/或固体含量的方法。该方法包括以下步骤：（i）提供包含流体中的颗粒的悬浮液; （ii）向悬浮液中加入环糊精化合物; 和（iii）通过除去至少一部分流体以形成包含颗粒的滤饼来使悬浮液脱水。环糊精化合物理想地以有效增加絮凝物的脱水速率，增加固体含量或两者的量以相对于不加入环糊精化合物而获得的速率，固体含量或两者的量加入。悬浮液可以是例如生物或非生物污泥或纸浆纤维的悬浮液，例如在制浆或造纸过程中。

59. 发明申请

US20080102581A1 High-voltage vertical transistor with a multi-gradient drain doping profile 失效
公开(公告)号：US20080102581A1
公开(公告)日：2008-05-01
申请号：US12004166
申请日：2007-12-19
申请人： Sujit Banerjee , Donald Disney
发明人： Sujit Banerjee , Donald Disney
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66734 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828 , Y10S438/925
摘要： A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

60. 发明申请

US20070132013A1 High-voltage vertical transistor with a multi-gradient drain doping profile 失效
标题翻译：具有多梯度漏极掺杂特性的高压垂直晶体管
公开(公告)号：US20070132013A1
公开(公告)日：2007-06-14
申请号：US11699936
申请日：2007-01-30
申请人： Sujit Banerjee , Donald Disney
发明人： Sujit Banerjee , Donald Disney
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66734 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828 , Y10S438/925
摘要： A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：高压晶体管包括在半导体衬底中限定台面的第一和第二沟槽。第一和第二场板构件分别设置在第一和第二沟槽中，第一和第二场板构件中的每一个通过介电层与台面分离。台面包括多个部分，每个部分具有基本上恒定的掺杂浓度梯度，一个部分的梯度比另一部分的梯度大至少10％。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

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