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51. 发明授权

US5849089A Evaporator for liquid raw material and evaporation method therefor 失效
标题翻译：液体原料蒸发器及其蒸发方法
公开(公告)号：US5849089A
公开(公告)日：1998-12-15
申请号：US818750
申请日：1997-03-14
申请人： Yoshitaka Tsunashima , Katsuya Okumura
发明人： Yoshitaka Tsunashima , Katsuya Okumura
IPC分类号： C23C16/44 , C23C16/40 , C23C16/448 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4483 , C23C16/402 , C23C16/4485
摘要： Inside a first cylinder for structuring an evaporator, a second cylinder is provided. The second cylinder has an undulated surface and a plurality of fine holes are provided on this surface. A liquid TEOS is contained in a first space positioned between the first cylinder and the second cylinder, and a second space positioned inside the second cylinder is filled with a gas TEOS evaporated from the fine holes. The pressure of the gas TEOS is set to be almost equal to the pressure of the liquid TEOS.
摘要翻译：在用于构造蒸发器的第一气缸内部，设置有第二气缸。第二圆柱体具有波状表面，并且在该表面上设置有多个细孔。液体TEOS容纳在位于第一气缸和第二气缸之间的第一空间中，并且位于第二气缸内部的第二空间填充有从细孔蒸发的气体TEOS。气体TEOS的压力被设定为几乎等于液体TEOS的压力。

52. 发明授权

US5818217A Electron beam irradiating apparatus and electric signal detecting apparatus 失效
标题翻译：电子束照射装置和电信号检测装置
公开(公告)号：US5818217A
公开(公告)日：1998-10-06
申请号：US222392
申请日：1994-04-04
申请人： Fumio Komatsu , Katsuya Okumura , Motosuke Miyoshi
发明人： Fumio Komatsu , Katsuya Okumura , Motosuke Miyoshi
IPC分类号： G21K5/04 , H01J37/02 , H01J37/147 , H01J37/302 , H01L21/66 , G01R31/305
CPC分类号： H01J37/3026 , H01J37/026
摘要： To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for-controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要翻译：为了防止电荷积累在由电子束扫描的平面上并进一步提高S / N比，电子束照射装置包括：位置信息信号输出部分，用于输出位置信息信号，以依次指定位置信息信号电子束照射在由电子束扫描的平面上，以便随机地指定照射位置; 以及照射控制器，用于响应于输出的位置信息信号，控制电子束在照射位置照射电子束。此外，为了在像素时钟信号的周期内在足够的时间间隔内积分光电信号，电信号检测电路包括多个采样保持电路和用于依次选择和激活采样保持电路的选择电路。

53. 发明授权

US5721173A Method of forming a shallow trench isolation structure 失效
标题翻译：形成浅沟槽隔离结构的方法
公开(公告)号：US5721173A
公开(公告)日：1998-02-24
申请号：US805314
申请日：1997-02-25
申请人： Hiroyuki Yano , Katsuya Okumura
发明人： Hiroyuki Yano , Katsuya Okumura
IPC分类号： H01L21/76 , H01L21/762 , H01L21/763 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/76224 , H01L21/763
摘要： A method of forming a trench isolation structure is provided in which a film is formed on a semiconductor substrate and a trench is formed in the semiconductor substrate through the film. A dielectric material is deposited in the trench and on the film. An etch resistant film is formed on the portions of the dielectric material in the trench and on exposed portions of the film at edge regions of the trench. The dielectric material on the film is selectively removed and the etch resistant film remaining on the dielectric material in the trench is selectively removed.
摘要翻译：提供一种形成沟槽隔离结构的方法，其中在半导体衬底上形成膜，并且通过膜在半导体衬底中形成沟槽。电介质材料沉积在沟槽和膜上。在沟槽中的介电材料的部分和沟槽的边缘区域的膜的暴露部分上形成耐蚀刻膜。选择性地去除膜上的电介质材料，并且选择性地去除留在沟槽中的电介质材料上的耐蚀刻膜。

54. 发明授权

US5660744A Plasma generating apparatus and surface processing apparatus 失效
标题翻译：等离子体发生装置和表面处理装置
公开(公告)号：US5660744A
公开(公告)日：1997-08-26
申请号：US492322
申请日：1995-06-19
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
摘要翻译：表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

55. 发明授权

US5637153A Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus 失效
标题翻译：热处理设备中反应管和排气管道系统的清洗方法
公开(公告)号：US5637153A
公开(公告)日：1997-06-10
申请号：US429159
申请日：1995-04-26
申请人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
发明人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
IPC分类号： C23C16/24 , C23C16/40 , C23C16/44 , B08B7/00 , B08B9/00
CPC分类号： C23C16/24 , C23C16/405 , C23C16/4405 , C23C16/4412
摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.
摘要翻译：在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

56. 发明授权

US5611942A Method for producing tips for atomic force microscopes 失效
标题翻译：用于制造原子力显微镜尖端的方法
公开(公告)号：US5611942A
公开(公告)日：1997-03-18
申请号：US397617
申请日：1995-03-02
申请人： Tadashi Mitsui , Katsuya Okumura
发明人： Tadashi Mitsui , Katsuya Okumura
IPC分类号： G01B21/30 , B81B1/00 , G01N37/00 , G01Q60/24 , G01Q70/10 , G01Q70/16 , H01J37/28 , H01J37/00 , B44C1/22
CPC分类号： G01Q60/38 , B82Y35/00 , Y10S438/978 , Y10S977/878
摘要： The present invention is a method for forming a three point atomic force microscope tip. The method includes forming a substantially longitudinally extending solid tip having a peripheral surface and a forward end surface. Three masks are formed by deposition of carbon upon the solid tip, with a first and second of the masks formed along the peripheral surface, and a third of the masks formed on the forward end surface. The mask covered tip is then etched for a predetermined period of time to remove material from both the tip and the mask. After the predetermined period of time has elapsed, the masks are completely removed, and the removal of material from the tip results in the formation of three spikes which are pointed to the location from which the masks were removed.
摘要翻译：本发明是形成三点原子力显微镜尖端的方法。该方法包括形成具有周边表面和前端表面的基本纵向延伸的固体尖端。通过将碳沉积在固体末端上形成三个掩模，其中第一和第二掩模沿着外周表面形成，并且三分之一的掩模形成在前端表面上。然后将掩模覆盖的尖端蚀刻预定时间段以从尖端和掩模两者中去除材料。在经过预定时间之后，掩模被完全去除，并且从尖端去除材料导致三个尖峰的形成，这三个尖峰指向去除掩模的位置。

57. 发明授权

US5539179A Electrostatic chuck having a multilayer structure for attracting an object 失效
标题翻译：具有吸引物体的多层结构的静电吸盘
公开(公告)号：US5539179A
公开(公告)日：1996-07-23
申请号：US792592
申请日：1991-11-15
申请人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
发明人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B23K10/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.
摘要翻译：用于静电保持晶片的静电卡盘设置在形成在磁控管等离子体蚀刻装置中的真空室中。所述静电卡盘具有基材，在所述基材上设置的由聚酰亚胺构成的第一绝缘层，由AlN构成的第二绝缘层，设置在第一绝缘层和第二绝缘层之间的导电片，以及由热固性树脂并且将第一绝缘层粘合到第二绝缘层。将晶片放置在第二绝缘层上，并且通过馈电片从高压电源向导电片提供电力，从而产生静电，因此产生用于将晶片保持在第二绝缘层上的库仑力。

58. 发明授权

US5444207A Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field 失效
标题翻译：等离子体产生装置和用于在均匀磁场中处理晶片的表面处理装置和方法
公开(公告)号：US5444207A
公开(公告)日：1995-08-22
申请号：US37169
申请日：1993-03-26
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： B23K10/00 , H01J37/32 , H01L21/00 , H05H1/18
CPC分类号： H01J37/32623 , B23K10/003 , H01J37/3266
摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
摘要翻译：一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

59. 发明授权

US5437733A Method and apparatus for treating a substrate 失效
标题翻译：用于处理基材的方法和设备
公开(公告)号：US5437733A
公开(公告)日：1995-08-01
申请号：US778370
申请日：1991-10-17
申请人： Katsuya Okumura
发明人： Katsuya Okumura
IPC分类号： G03F7/30 , C25D5/02 , C25D7/12 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/304 , H01L21/60 , B08B3/04
CPC分类号： H01L21/67023
摘要： A plane of a treatment liquid holder having a number of through holes faces a treatment surface of a substrate. A treatment liquid is held between the treatment surface and the liquid holder by utilizing a surface tension of the treatment liquid. Since the treatment liquid is applied only to the treatment surface, an extremely small amount of treatment liquid suffices for the treatment. In addition, since a fresh treatment liquid can be used in every treatment, cross-contamination is suppressed and the treatment can be performed with safety at a low cost.
摘要翻译：具有多个通孔的处理液保持器的平面面向基板的处理表面。通过利用处理液的表面张力将处理液体保持在处理表面和液体保持器之间。由于处理液仅施加到处理表面，所以极少量的处理液足以进行处理。此外，由于在每次处理中可以使用新鲜处理液，因此可以以低成本安全地进行交叉污染并进行处理。

60. 发明授权

US5405443A Substrates processing device 失效
标题翻译：基板处理装置
公开(公告)号：US5405443A
公开(公告)日：1995-04-11
申请号：US051554
申请日：1993-04-23
申请人： Masami Akimoto , Kazuyuki Gotou , Yasushi Ito , Katsuya Okumura
发明人： Masami Akimoto , Kazuyuki Gotou , Yasushi Ito , Katsuya Okumura
IPC分类号： B05C11/08 , B05C11/10 , G03F7/16 , G03F7/30 , H01L21/00 , H01L21/027 , H01L21/30 , B05C5/00
CPC分类号： H01L21/6715 , B05C11/08 , B05C11/1002 , B05C11/101 , B05C11/1047 , G03F7/162 , G03F7/3021
摘要： A substrates processing device having a tank in which process solution is contained, a bottle communicated with the tank through a conduit and located above an object to be processed with the process solution supplied, a nozzle located under the bottle, a support for supporting the object to be processed, and a changeover device for making pressure in it negative through a conduit when the process solution is to be added to it and also making pressure in it normal through the conduit when the process solution is to be supplied to the nozzle.
摘要翻译：一种基板处理装置，具有容纳有处理液的罐，通过导管与罐连通的瓶子，位于被供给的处理液的待处理对象上方，位于瓶下方的喷嘴，支撑物体的支撑体以及当将工艺溶液加入其中时，通过导管使压力为负的切换装置，并且当将处理液提供给喷嘴时，通过导管使压力正常。

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