专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US06388323B1 Electrode material and electrode for III-V group compound semiconductor 失效
标题翻译：用于III-V族化合物半导体的电极材料和电极
公开(公告)号：US06388323B1
公开(公告)日：2002-05-14
申请号：US08808537
申请日：1997-02-28
申请人： Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L33/30
摘要： The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
摘要翻译：本发明提供一种对III-V族化合物半导体具有低接触电阻的电极材料，从而实现了具有高亮度和低电压驱动的发光器件。将本发明的电极材料应用于III-V族化合物半导体，其通过以下公式表示：In x Ga y Al z N，其中x + y + z = 1，0 <= x <= 1,0，y = 1，0 <= z <= 1，并掺杂有p型杂质。电极材料包括Au和选自Mg和Zn中的至少一种金属的合金。

52. 发明授权

US06346720B1 Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element 失效
标题翻译：层状III-V族化合物半导体及其制造方法以及发光元件
公开(公告)号：US06346720B1
公开(公告)日：2002-02-12
申请号：US08590574
申请日：1996-01-24
申请人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341
摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0
摘要翻译：本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0

53. 发明授权

US6023077A Group III-V compound semiconductor and light-emitting device 失效
标题翻译： III-V族化合物半导体和发光器件
公开(公告)号：US6023077A
公开(公告)日：2000-02-08
申请号：US757981
申请日：1996-11-27
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
IPC分类号： H01L33/00 , H01L33/32
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075
摘要： A Group III-V compound semiconductor of high crystallinity and high quality, and a light-emitting device using the same, which has high luminous efficacy are obtained by providing a specific ground layer composed of at least three layers between the luminous layer and substrate. A light-emitting device capable of inhibiting formation of a misfit dislocation on the interface of the luminous layer and easily emitting light having a longer wavelength is also obtained by controlling the AlN mixed crystal ratio of at least one layer between the luminous layer and the substrate within a specific range and controlling the lattice constant of the luminous layer to a value larger than that of the ground layer, the luminous layer having a compressive strain formed in contact with the ground layer.
摘要翻译：通过在发光层和基板之间设置由至少三层构成的特定的接地层，可以获得高结晶性和高质量的III-V族化合物半导体和具有高发光效率的发光装置。通过控制发光层和基板之间的至少一层的AlN混晶比，能够抑制在发光层的界面上形成失配位错并容易发光的长波长的发光装置在特定范围内，并且将发光层的晶格常数控制为大于接地层的晶格常数，发光层具有与接地层接触形成的压缩应变。

54. 发明授权

US5708301A Electrode material and electrode for III-V group compound semiconductor 失效
标题翻译：用于III-V族化合物半导体的电极材料和电极
公开(公告)号：US5708301A
公开(公告)日：1998-01-13
申请号：US392244
申请日：1995-02-22
申请人： Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Noboru Fukuhara , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L33/30 , H01L33/40 , H01L23/48
CPC分类号： H01L33/40 , H01L33/30
摘要： The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
摘要翻译：本发明提供一种对III-V族化合物半导体具有低接触电阻的电极材料，从而实现了具有高亮度和低电压驱动的发光器件。将本发明的电极材料应用于III-V族化合物半导体，其以通式InxGayAlzN表示，其中x + y + z =1,0.0≤x≤1,0< y <1，0

55. 发明申请

US20110316051A1 SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE 有权
标题翻译：半导体晶体管，半导体晶体管的制造方法，电子器件及其制造方法
公开(公告)号：US20110316051A1
公开(公告)日：2011-12-29
申请号：US13255648
申请日：2010-03-08
申请人： Tomoyuki Takada , Masahiko Hata , Sadanori Yamanaka
发明人： Tomoyuki Takada , Masahiko Hata , Sadanori Yamanaka
IPC分类号： H01L29/165 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02452 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02642 , H01L29/107 , H01L29/73 , H01L29/7371 , H01L29/772
摘要： The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed.
摘要翻译：半导体晶片包括：基底晶片; 以及抑制层，其一体地设置在所述基底晶片上或者彼此分离，并且抑制化合物半导体的晶体的生长，其中所述抑制层具有多个第一开口区域，所述第一开口区域具有多个穿过所述抑制层并通向所述基底晶片的开口，所述多个第一开口区域中的每一个在其中包括设置在相同布置中的多个第一开口，所述多个第一开口中的一些是第一元件形成开口，每个元件形成开口设置有第一其上形成有电子元件的复合半导体，并且多个第一开口中的另一个是其中不形成电子元件的第一虚拟开口。

56. 发明申请

US20110186816A1 SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD 审中-公开
标题翻译：半导体器件滤波器，半导体器件，设计系统，制造方法和设计方法
公开(公告)号：US20110186816A1
公开(公告)日：2011-08-04
申请号：US13122125
申请日：2009-10-01
申请人： Tomoyuki Takada , Masahiko Hata , Sadanori Yamanaka
发明人： Tomoyuki Takada , Masahiko Hata , Sadanori Yamanaka
IPC分类号： H01L29/165 , G06F17/50 , H01L21/20
CPC分类号： H01L21/02642 , H01L21/0237 , H01L21/02439 , H01L21/02636 , H01L29/66742
摘要： A device forming thin film for forming a semiconductor device; an inhibition portion that surrounds the device forming thin film and inhibits growth of a precursor of the device forming thin film into a crystal; a sacrificial growth portion that is formed by causing the precursor to sacrificially grow into a crystal, and is positioned around the device forming thin film separated by the inhibition portion; and a protection film that covers a top portion of the sacrificial growth portion and exposes a top portion of the device forming thin film are included. The protection film may be made of polyimide.
摘要翻译：一种用于形成半导体器件的形成薄膜的器件; 抑制部分，其围绕所述器件形成薄膜并抑制所述器件形成薄膜的前体生长成晶体; 通过使前体牺牲生长成晶体而形成的牺牲生长部，并且位于由抑制部分分离的器件形成薄膜的周围; 并且包括覆盖牺牲生长部分的顶部并暴露器件形成薄膜的顶部的保护膜。保护膜可以由聚酰亚胺制成。

57. 发明授权

US07991061B2 Transmitting device and control method thereof 有权
标题翻译：发射装置及其控制方法
公开(公告)号：US07991061B2
公开(公告)日：2011-08-02
申请号：US12040551
申请日：2008-02-29
申请人： Tomoyuki Takada
发明人： Tomoyuki Takada
IPC分类号： H04K1/10
CPC分类号： H04L27/2627 , H04L27/2649
摘要： A transmitting device is provided that generates OFDM symbols by identifying a sampling frequency of input data that is input from an external device, determining a number of inverse Fourier transform sample points and a number of sampling points of a redundant data portion in accordance with the identified sampling frequency, and subjecting the input data to OFDM modulation using the determined number of sampling points. The transmitting device then transmits the generated OFDM symbols.
摘要翻译：提供了一种发送装置，其通过识别从外部设备输入的输入数据的采样频率来生成OFDM符号，根据所识别的确定冗余数据部分的傅立叶逆变换采样点的数量和抽样点的数量采样频率，并使用确定数量的采样点对输入数据进行OFDM调制。然后，发送设备发送所生成的OFDM符号。

58. 发明申请

US20110090918A1 COMMUNICATION METHOD AND APPARATUS 审中-公开
标题翻译：通信方法和设备
公开(公告)号：US20110090918A1
公开(公告)日：2011-04-21
申请号：US12901003
申请日：2010-10-08
申请人： Makoto Umehara , Tomoyuki Takada , Wataru Tachiwa , Hitoshi Asai
发明人： Makoto Umehara , Tomoyuki Takada , Wataru Tachiwa , Hitoshi Asai
IPC分类号： H04J3/00
CPC分类号： H04L5/0048
摘要： The parent station or a child station that transmits a pilot symbol is assigned to a pilot symbol transmission slot within a TDMA frame in a parent station or plurality of child stations for communicating using TDMA. The assigned parent station or child station transmits a pilot symbol using the pilot symbol transmission slot.
摘要翻译：发送导频符号的母站或子站被分配给母站或多个子站中的TDMA帧内的导频符号发送时隙，用于使用TDMA进行通信。分配的母站或子站使用导频符号发送时隙发送导频符号。

59. 发明申请

US20110037099A1 SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE 有权
标题翻译：半导体波导，半导体波长制造方法和电子器件
公开(公告)号：US20110037099A1
公开(公告)日：2011-02-17
申请号：US12811038
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02463 , H01L21/02502 , H01L21/02516 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/8258 , H01L27/0605 , H01L29/22 , H01L29/66318 , H01L29/737 , H01L29/7786
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a butler layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 在晶片上晶体生长并形成孤岛的Ge层; 在Ge层上晶体生长的管状层，是含有P的3-5族化合物半导体层; 以及在缓冲层上晶体生长的功能层。 Ge层可以成形为岛，其尺寸不超过由晶格缺陷移动的距离的两倍，这是由于Ge层在一定温度下退火一定时间的结果。 Ge层可以成形为具有如下尺寸的岛，即当Ge层在一定温度下退火时，具有相对于作为晶片材料的Si的热膨胀系数的差的应力不会引起晶体缺陷的尺寸。

60. 发明申请

US20110006399A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
标题翻译：半导体波导和半导体波形制造方法
公开(公告)号：US20110006399A1
公开(公告)日：2011-01-13
申请号：US12810989
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/02516 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/267 , H01L29/7371
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii）在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式