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51. 发明授权

US08067058B2 Method for producing battery electrode and apparatus for producing battery electrode 失效
标题翻译：电池电极的制造方法以及电池电极的制造装置
公开(公告)号：US08067058B2
公开(公告)日：2011-11-29
申请号：US12515685
申请日：2007-12-25
申请人： Tetsuya Hayashi , Akira Motoi , Yasuhiko Takeuchi
发明人： Tetsuya Hayashi , Akira Motoi , Yasuhiko Takeuchi
IPC分类号： H01M4/00 , H01M4/02 , H01M4/04
CPC分类号： H01M4/139 , B05C1/0817 , H01M4/0404 , H01M4/0409 , H01M4/13 , H01M4/505 , H01M4/525 , H01M10/4235
摘要： The amount of a paint for forming a porous heat-resistant layer supplied to the outer surface of a gravure roll is adjusted by removing the paint with a blade that is disposed so as to contact the outer surface. A resin blade is used, and the position at which the resin blade contacts the outer surface of the gravure roll is changed as the resin blade wears away. This prevents the amount of the paint for forming the porous heat-resistant layer removed from the outer surface of the gravure roll from changing as the resin blade wears away, so that the excess amount of the paint carried on the outer surface of the gravure roll is removed with good accuracy. An almost constant amount of the paint is thus transferred to an electrode surface from the outer surface of the gravure roll, and a porous heat-resistant layer with an almost uniform thickness is stably formed on an industrial scale.
摘要翻译：供给到凹版辊的外表面的用于形成多孔耐热层的涂料的量通过用设置成与外表面接触的刮板去除涂料来调节。使用树脂刀片，并且树脂刀片与凹版辊的外表面接触的位置随着树脂刀片磨损而改变。这样可以防止由于树脂刮刀磨损而从凹版辊的外表面除去形成多孔耐热层的涂料量的变化，从而使得在凹版辊的外表面上承载的过量的油漆被精确地移除。因此，几乎恒定量的涂料从凹版辊的外表面转移到电极表面，并且工业规模稳定地形成具有几乎均匀厚度的多孔耐热层。

52. 发明申请

US20110205876A1 OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING AND REPRODUCING DEVICE, METHOD FOR CONTROLLING THE DEVICE, OPTICAL INFORMATION RECORDING AND REPRODUCING PROGRAM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：光信息记录介质，光信息记录和再现设备，用于控制设备的方法，光信息记录和再现程序以及计算机可读存储介质
公开(公告)号：US20110205876A1
公开(公告)日：2011-08-25
申请号：US13126243
申请日：2009-10-01
申请人： Yoshihisa Adachi , Shigemi Maeda , Hideharu Tajima , Ikuo Nakano , Tetsuya Okumura , Takashi Arimoto , Noboru Iwata , Tetsuya Hayashi , Atsushi Etoh
发明人： Yoshihisa Adachi , Shigemi Maeda , Hideharu Tajima , Ikuo Nakano , Tetsuya Okumura , Takashi Arimoto , Noboru Iwata , Tetsuya Hayashi , Atsushi Etoh
IPC分类号： G11B20/10 , G11B7/26
CPC分类号： G11B7/0079 , H04N5/85
摘要： The present invention provides an optical information recording medium (2) capable of shortening a time from acquiring identification information to starting a program etc. recorded on an ROM layer. The optical information recording medium (2) includes two or more information recording layers, information of each of the two or more information recording layers is readable by emitting reproducing light thereto, at least one of said two or more information recording layers is an RE/R layer (4), at least another one of said two or more information recording layers is an ROM layer (5), and the RE/R layer (4) includes an identification information recording region (41), and an interlayer-movement Flag is recorded on the identification information recording region (41).
摘要翻译：本发明提供一种光信息记录介质（2），其能够缩短从获取记录在ROM层上的识别信息到开始程序等的时间。光信息记录介质（2）包括两个或更多个信息记录层，两个或多个信息记录层中的每一个的信息可通过发射再现光来读取，所述两个或多个信息记录层中的至少一个是RE / R层（4）中，所述两个或多个信息记录层中的至少另一个是ROM层（5），RE / R层（4）包括识别信息记录区域（41），层间移动标志被记录在识别信息记录区域（41）上。

53. 发明授权

US07989295B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US07989295B2
公开(公告)日：2011-08-02
申请号：US13014190
申请日：2011-01-26
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/1608 , H01L29/267 , H01L29/66068
摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

54. 发明授权

US07929020B2 Camera device and method and program for starting the camera device 有权
标题翻译：相机设备及启动相机设备的方法和程序
公开(公告)号：US07929020B2
公开(公告)日：2011-04-19
申请号：US12077717
申请日：2008-03-20
申请人： Yasushi Maeno , Tetsuya Hayashi , Kenji Yoshizawa , Koki Nakamura , Jun Hosoda , Hidetoshi Sumi
发明人： Yasushi Maeno , Tetsuya Hayashi , Kenji Yoshizawa , Koki Nakamura , Jun Hosoda , Hidetoshi Sumi
IPC分类号： H04N5/225
CPC分类号： H04N5/23296 , G06F9/445 , H04N1/00965 , H04N5/232 , H04N2101/00 , H04N2201/0084
摘要： A camera device comprises a movable optical system, a driving unit which drives the optical system, and a control unit which makes the driving unit start driving of the optical system to a predetermined state by an initialization of the optical system by using an interrupt processing which is executed by setting an interrupt processing routine before the operating system is started, when the camera device is started up in a state in which an operation mode for photographing is set.
摘要翻译：相机装置包括可移动光学系统，驱动光学系统的驱动单元和控制单元，该控制单元通过使用中断处理使得光学系统的初始化开始驱动光学系统到预定状态，该中断处理通过在操作系统启动之前设置中断处理程序，当在设置用于拍摄的操作模式的状态下启动相机装置时执行。

55. 发明授权

US07902555B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07902555B2
公开(公告)日：2011-03-08
申请号：US12325377
申请日：2008-12-01
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/0847 , H01L29/0623 , H01L29/0642 , H01L29/0646 , H01L29/0649 , H01L29/0696 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability. Further, when the semiconductor chip is used in an L load circuit or the like, for example, at the time of conduction or during a transient response time to the interrupted state, in an index such as a short resistant load amount and an avalanche resistant amount, which are indexes of a breakdown tolerance when overcurrent or overvoltage occurs, the current concentration on a specific portion can be prevented, and thus, these breakdown tolerances can also be improved.
摘要翻译：作为将反向偏置电流保持集中在凸角上的电流 - 浓度释放区域的异质半导体角区域设置在异质半导体区域中。由此，可以防止凸角上的电流集中。结果，在中断时可以提高中断性能，同时，在导通时防止特定部位的热点的产生，抑制特定部分的劣化，从而确保长期可靠。此外，例如在导通时或半导体芯片用于L负载电路等时，例如，在短时间响应时间到中断状态时，以诸如短路负载量和雪崩阻抗的指标量是当发生过电流或过电压时的击穿容限的指标，可以防止特定部分上的电流浓度，因此也可以提高这些击穿公差。

56. 发明授权

US07901738B2 Method for forming electrode for battery 有权
标题翻译：电池用电极形成方法
公开(公告)号：US07901738B2
公开(公告)日：2011-03-08
申请号：US11700132
申请日：2007-01-31
申请人： Tetsuya Hayashi
发明人： Tetsuya Hayashi
IPC分类号： B05D5/12 , B05D1/28
CPC分类号： H01M4/0404 , H01M2/1673
摘要： A method for forming an electrode for a battery includes the step of forming a porous layer on the surface of an electrode hoop formed at its surface with a mixture layer containing an active material. The porous layer is formed in the following manner: A gravure roll is rotated oppositely to the direction of movement of the electrode hoop while being allowed to abut against the surface of the moving electrode hoop, thereby applying a coating fluid serving as a precursor of the porous layer to the surface of the electrode hoop. A plurality of grooves formed in the circumferential surface of the gravure roll extend in parallel in oblique directions against the rotation direction of the gravure roll from the central line of the circumferential surface to the outer edges of the circumferential surface so as to be arranged in a symmetrical manner relative to the central line.
摘要翻译：形成电池用电极的方法包括在其表面形成的电极环的表面上形成多孔层的步骤，该混合层含有活性物质。以下述方式形成多孔层：使凹版辊与电极环的移动方向相反地旋转，同时抵靠移动电极环的表面，从而涂布作为多孔层到电极环的表面。形成在凹版滚筒的圆周表面中的多个凹槽相对于凹版辊的旋转方向在倾斜方向上从圆周表面的中心线延伸到圆周表面的外边缘，以便布置在对称的方式相对于中心线。

57. 发明授权

US07852608B2 Electrostatic discharge protection circuit and semiconductor device 有权
标题翻译：静电放电保护电路和半导体器件
公开(公告)号：US07852608B2
公开(公告)日：2010-12-14
申请号：US11882865
申请日：2007-08-06
申请人： Masanori Yoshitani , Tetsuya Hayashi , Tomokazu Higuchi
发明人： Masanori Yoshitani , Tetsuya Hayashi , Tomokazu Higuchi
IPC分类号： H02H9/04
CPC分类号： H03K17/08122 , H01L27/0251 , H03K17/6872
摘要： An electrostatic discharge protection circuit and a semiconductor device that prevent the breakdown of a semiconductor device caused by an electrostatic discharge (ESD) which suddenly changes. When voltage which is far higher than VDD1 is applied to a power supply line as a result of an ESD, a great electric potential difference is produced between VDD1 and VSS. At this time an electric current path for making an electric charge generated by overvoltage flow to a grounding line is formed by a clamp circuit. As a result, an electric current flows into GND of a circuit block. This prevents the production of a great electric potential difference between VDD1 and VSS. In addition, at this time a rapid change in the level of the overvoltage applied to a signal line is suppressed by a protection circuit. This prevents the dielectric breakdown of gate oxide films of transistors included in a circuit block which receives a control signal.
摘要翻译：一种防止由突然变化的静电放电（ESD）引起的半导体器件击穿的静电放电保护电路和半导体器件。当远高于VDD1的电压作为ESD施加到电源线时，在VDD1和VSS之间产生大的电位差。此时，通过钳位电路形成用于使由过电压产生的电荷流向接地线的电流路径。结果，电流流入电路块的GND。这样可以防止在VDD1和VSS之间产生很大的电位差。此外，此时，通过保护电路来抑制施加到信号线的过电压的电平的急剧变化。这防止包含在接收控制信号的电路块中的晶体管的栅极氧化膜的介电击穿。

58. 发明授权

US07816038B2 Lithium ion secondary battery and method for producing the same 有权
标题翻译：锂离子二次电池及其制造方法
公开(公告)号：US07816038B2
公开(公告)日：2010-10-19
申请号：US11578964
申请日：2005-04-19
申请人： Tsumoru Ohata , Junji Nakajima , Tetsuya Hayashi , Shigeo Ikuta , Akiko Fujino , Eitaro Nakamura
发明人： Tsumoru Ohata , Junji Nakajima , Tetsuya Hayashi , Shigeo Ikuta , Akiko Fujino , Eitaro Nakamura
IPC分类号： H01M4/04 , H01M4/62
CPC分类号： H01M10/0567 , H01M4/0402 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/139 , H01M4/62 , H01M10/0525 , H01M2300/004 , Y10T29/49115
摘要： A method for producing a lithium ion secondary battery includes the steps of: forming a positive electrode mixture layer on a positive electrode substrate to obtain a positive electrode; forming a negative electrode mixture layer on a negative electrode substrate to obtain a negative electrode; forming an electronically insulating porous film that is bonded to a surface of at least one of the positive electrode and the negative electrode; interposing a separator between the positive electrode and the negative electrode to form an electrode plate assembly; and impregnating the electrode plate assembly with a non-aqueous electrolyte. The step of forming a porous film includes the steps of: preparing a porous film paste that contains a film binder comprising a thermo-cross-linkable resin and a particulate filler; and applying the porous film paste onto a surface of at least one of the positive electrode and the negative electrode and heating the resultant applied film.
摘要翻译：锂离子二次电池的制造方法包括以下步骤：在正极基板上形成正极合剂层，得到正极; 在负极基板上形成负极合剂层，得到负极; 形成与所述正极和所述负极中的至少一个的表面接合的电子绝缘性多孔膜，在正极和负极之间插入隔板以形成电极板组件; 并用非水电解质浸渍电极板组件。形成多孔膜的步骤包括以下步骤：制备含有包含可热交联树脂和颗粒填料的膜粘合剂的多孔膜糊; 以及将所述多孔膜浆料涂布在所述正极和负极中的至少一个的表面上，并加热所得到的涂膜。

59. 发明授权

US07671383B2 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07671383B2
公开(公告)日：2010-03-02
申请号：US11714214
申请日：2007-03-06
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/732
CPC分类号： H01L29/267 , H01L21/0475 , H01L29/0623 , H01L29/0847 , H01L29/1608 , H01L29/4236 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device, includes: a first conductivity type semiconductor base having a main face; a hetero semiconductor region contacting the main face of the semiconductor base and forming a hetero junction in combination with the semiconductor base, the semiconductor base and the hetero semiconductor region in combination defining a junction end part; a gate insulating film defining a junction face in contact with the semiconductor base and having a thickness; and a gate electrode disposed adjacent to the junction end part via the gate insulating film and defining a shortest point in a position away from the junction end part by a shortest interval, a line extending from the shortest point to a contact point vertically relative to the junction face, forming such a distance between the contact point and the junction end part as to be smaller than the thickness of the gate insulating film contacting the semiconductor base.
摘要翻译：一种半导体器件，包括：具有主面的第一导电型半导体基底; 与半导体基板的主面接触并与半导体基底结合形成异质结的异质半导体区域，半导体基底和异质半导体区域组合形成连接端部; 限定与半导体基底接触并具有厚度的接合面的栅极绝缘膜; 以及栅电极，其经由所述栅极绝缘膜与所述接合端部相邻设置，并且在远离所述接合端部的位置中以最短间隔限定最短点，从所述最短点到接触点相对于所述接合端垂直延伸的线接合面在接触点和接合端部之间形成的距离小于与半导体基底接触的栅极绝缘膜的厚度。

60. 发明申请

US20100033711A1 METHOD OF MEASURING PHYSICAL QUANTITY OF OBJECT TO BE MEASURED, AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：测量对象物理量的方法及其控制方法
公开(公告)号：US20100033711A1
公开(公告)日：2010-02-11
申请号：US12521078
申请日：2007-12-19
申请人： Tetsuya Hayashi , Eisuke Sasaoka , Yoshinori Yamamoto , Makoto Katayama , Tomohiko Kanie , Shinji Ishikawa , Osamu Ichikawa
发明人： Tetsuya Hayashi , Eisuke Sasaoka , Yoshinori Yamamoto , Makoto Katayama , Tomohiko Kanie , Shinji Ishikawa , Osamu Ichikawa
IPC分类号： G01N21/00 , G01J3/00
CPC分类号： G01K11/32 , G01D5/35303 , G01F1/661 , G01K11/00 , G01L1/242 , G01N21/0303 , G01N21/65 , G01P5/02 , G01P5/26
摘要： This invention relates to optical sensing technology to measure and control a physical quantity of an object that exists on or within a microstructure object, utilizing Brillouin scattering decreases. The measurement method prepares an optical waveguide one-, two- or three-dimensionally, on or within a micro-chemical chip, IC chip, or other element, and measures a physical quantity of the object on the basis of a property variation of light attributed to Brillouin scattering occurring in the optical waveguide.
摘要翻译：本发明涉及利用布里渊散射减小来测量和控制存在于微结构物体上或其内的物体的物理量的光学感测技术。测量方法在微芯片，IC芯片或其他元件上或其内部一维，二维或三维地制备光波导，并且基于光的性质变化来测量物体的物理量归因于在光波导中发生的布里渊散射。

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