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51. 发明授权

US07959889B2 Carbon microtubes 有权
标题翻译：碳微管
公开(公告)号：US07959889B2
公开(公告)日：2011-06-14
申请号：US12221886
申请日：2008-08-06
申请人： Huisheng Peng , Yuntian Theodore Zhu , Dean E. Peterson , Quanxi Jia
发明人： Huisheng Peng , Yuntian Theodore Zhu , Dean E. Peterson , Quanxi Jia
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , Y10T428/24149 , Y10T428/2918
摘要： A carbon microtube comprising a hollow, substantially tubular structure having a porous wall, wherein the microtube has a diameter of from about 10 μm to about 150 μm, and a density of less than 20 mg/cm3. Also described is a carbon microtube, having a diameter of at least 10 μm and comprising a hollow, substantially tubular structure having a porous wall, wherein the porous wall comprises a plurality of voids, said voids substantially parallel to the length of the microtube, and defined by an inner surface, an outer surface, and a shared surface separating two adjacent voids.
摘要翻译：一种碳微管，包括具有多孔壁的中空的基本管状结构，其中所述微管的直径为约10μm至约150μm，密度小于20mg / cm 3。还描述了直径为至少10μm并且包括具有多孔壁的中空的基本管状结构的碳微管，其中多孔壁包括多个空隙，所述空隙基本上平行于微管的长度，并且由内表面，外表面和分开两个相邻空隙的共享表面限定。

52. 发明授权

US07851412B2 Wide band gap semiconductor templates 失效
标题翻译：宽带隙半导体模板
公开(公告)号：US07851412B2
公开(公告)日：2010-12-14
申请号：US11707611
申请日：2007-02-15
申请人： Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
发明人： Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
IPC分类号： H01L39/24 , H01B1/00 , H01B1/02 , B32B9/00
CPC分类号： C30B29/16 , C30B23/02 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554
摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
摘要翻译：本发明涉及一种基于在立方（001）MgO封端表面上的外延（111）取向的稀土 - ⅣB族氧化物和可修正的离子束辅助沉积（“IBAD”）技术的薄膜结构被六角晶体结构的半导体覆盖。结合某些模板材料的IBAD氧化镁（“MgO”）技术用于制造所需的薄膜阵列。类似地，具有适当模板层的IBAD MgO可用于具有立方晶体结构的半导体。

53. 发明授权

US07839499B2 Hydrogen sensor 失效
标题翻译：氢传感器
公开(公告)号：US07839499B2
公开(公告)日：2010-11-23
申请号：US12069971
申请日：2008-02-13
申请人： Yixiang Duan , Quanxi Jia , Wenqing Cao
发明人： Yixiang Duan , Quanxi Jia , Wenqing Cao
IPC分类号： G01J3/30
CPC分类号： G01N21/67 , G01J3/30 , G01N2201/0221
摘要： A hydrogen sensor for detecting/quantitating hydrogen and hydrogen isotopes includes a sampling line and a microplasma generator that excites hydrogen from a gas sample and produces light emission from excited hydrogen. A power supply provides power to the microplasma generator, and a spectrometer generates an emission spectrum from the light emission. A programmable computer is adapted for determining whether or not the gas sample includes hydrogen, and for quantitating the amount of hydrogen and/or hydrogen isotopes are present in the gas sample.
摘要翻译：用于检测/定量氢和氢同位素的氢传感器包括从气体样品中激发氢气并从激发的氢气产生光发射的采样管线和微质发生器。电源为微量发生器提供电力，光谱仪从发光中产生发射光谱。可编程计算机适于确定气体样品是否包括氢，并且用于定量气体样品中存在氢和/或氢同位素的量。

54. 发明申请

US20100047569A1 Fibrous composites comprising carbon nanotubes and silica 有权
标题翻译：包含碳纳米管和二氧化硅的纤维复合材料
公开(公告)号：US20100047569A1
公开(公告)日：2010-02-25
申请号：US12229046
申请日：2008-08-19
申请人： Huisheng Peng , Yuntian Theodore Zhu , Dean E. Peterson , Quanxi Jia
发明人： Huisheng Peng , Yuntian Theodore Zhu , Dean E. Peterson , Quanxi Jia
IPC分类号： B32B27/28 , C08G77/18
CPC分类号： C08G77/26 , C08G77/16 , Y10S977/742 , Y10S977/748 , Y10S977/847 , Y10T428/2918 , Y10T428/2924
摘要： Fibrous composite comprising a plurality of carbon nanotubes; and a silica-containing moiety having one of the structures: (SiO)3Si—(CH2)n—NR1R2) or (SiO)3Si—(CH2)n—NCO; where n is from 1 to 6, and R1 and R2 are each independently H, CH3, or C2H5.
摘要翻译：包含多个碳纳米管的纤维复合材料; 和（SiO）3 Si（（CH 2）n -NR 11 R 2）或（SiO）3 Si-（CH 2）n -NCO的结构之一的含二氧化硅的部分; 其中n为1至6，并且R 1和R 2各自独立地为H，CH 3或C 2 H 5。

55. 发明授权

US07608335B2 Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate 失效
标题翻译：在多晶/非晶衬底上的单晶，高载流子迁移率硅薄膜附近
公开(公告)号：US07608335B2
公开(公告)日：2009-10-27
申请号：US11001461
申请日：2004-11-30
申请人： Alp T. Findikoglu , Quanxi Jia , Paul N. Arendt , Vladimir Matias , Woong Choi
发明人： Alp T. Findikoglu , Quanxi Jia , Paul N. Arendt , Vladimir Matias , Woong Choi
IPC分类号： B32B9/00 , B32B9/04 , B32B13/04
CPC分类号： C30B29/06 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L21/02532 , H01L21/02587 , H01L21/02658
摘要： A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.
摘要翻译：一种模板制品，包括基底，其包括：（i）选自多晶基底和非晶基底的基材，和（ii）在所述基材表面上的至少一层不同材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性;以及（c）适于随后沉积半导体材料的晶格结构; 与包括基底基板的半导体产品一起提供，所述半导体产品包括：（i）选自多晶基底和非晶基底的基材，和（ii）在基底表面上的至少一层不同材料材料; 以及在所述基底基板上的缓冲材料层，所述缓冲材料层的特征在于：（a）与所述基底基板的化学反应性低，（b）在低真空条件下在至少约800℃的温度下的稳定性，以及（c）适于随后沉积半导体材料的晶格结构结构，以及半导体材料的顶层在缓冲材料层上。

56. 发明申请

US20090233080A1 Porous light-emitting compositions 有权
标题翻译：多孔发光组合物
公开(公告)号：US20090233080A1
公开(公告)日：2009-09-17
申请号：US12322419
申请日：2009-01-30
申请人： Anthony K. Burrell , Thomas Mark McCleskey , Quanxi Jia , Eve Bauer , Alexander H. Mueller
发明人： Anthony K. Burrell , Thomas Mark McCleskey , Quanxi Jia , Eve Bauer , Alexander H. Mueller
IPC分类号： B32B3/26 , C09K11/77 , C09K11/08 , B32B3/00
CPC分类号： C09K11/671 , C09K11/54 , H01L31/02322 , H01L31/055 , Y10T428/12479 , Y10T428/24149 , Y10T428/24496 , Y10T428/24942 , Y10T428/249953 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249978 , Y10T428/24999 , Y10T428/268
摘要： Light-emitting devices are prepared by coating a porous substrate using a polymer-assisted deposition process. Solutions of metal precursor and soluble polymers having binding properties for metal precursor were coated onto porous substrates. The coated substrates were heated at high temperatures under a suitable atmosphere. The result was a substrate with a conformal coating that did not substantially block the pores of the substrate.
摘要翻译：通过使用聚合物辅助沉积工艺涂覆多孔基底来制备发光器件。具有金属前体结合性质的金属前体和可溶性聚合物的溶液涂覆在多孔基材上。将涂覆的基材在合适的气氛下在高温下加热。结果是具有基本上不阻挡基底的孔的保形涂层的基底。

57. 发明申请

US20080050528A1 Polymer-assisted deposition of films 有权
标题翻译：聚合物辅助沉积膜
公开(公告)号：US20080050528A1
公开(公告)日：2008-02-28
申请号：US11804472
申请日：2007-05-17
申请人： Thomas McCleskey , Anthony Burrell , Quanxi Jia , Yuan Lin
发明人： Thomas McCleskey , Anthony Burrell , Quanxi Jia , Yuan Lin
IPC分类号： B05D3/02
CPC分类号： C23C26/00 , C23C18/122 , C23C18/1279 , C23C18/1283
摘要： A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
摘要翻译：提出了用于沉积金属氮化物膜等的聚合物辅助沉积工艺。该方法包括一种或多种金属前体和对于一种或多种金属前体具有结合特性的可溶性聚合物的溶液。在涂覆操作之后，将所得涂层在合适的气氛下在高温下加热，得到金属氮化物膜等。这样的膜可以在包括非平面基底的各种基底上共形。在一些情况下，膜可以在结构上外延，并且可以具有光学质量。该方法可以是无机溶剂。

58. 发明申请

US20070032384A1 Structure for improved high critical current densities in YBCO coatings 审中-公开
标题翻译：用于改善YBCO涂层中高临界电流密度的结构
公开(公告)号：US20070032384A1
公开(公告)日：2007-02-08
申请号：US11189228
申请日：2005-07-26
申请人： Stephen Foltyn , Quanxi Jia , Haiyan Wang
发明人： Stephen Foltyn , Quanxi Jia , Haiyan Wang
IPC分类号： H01L39/24
CPC分类号： H01L39/128 , H01L39/2422 , H01L39/2448
摘要： Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer high temperature barium-copper oxide structures where individual high temperature barium-copper oxide layers are separated by a thin layer of a metal oxide material such as CeO2 and the like.
摘要翻译：公开了超导膜结构的临界电流容量的改进，并且包括使用例如多层高温钡 - 铜氧化物结构，其中各个高温钡 - 铜氧化物层被金属氧化物材料如CeO的薄层分开＆lt; 2＆gt;等等。

59. 发明申请

US20050008777A1 Polymer-assisted deposition of films 失效
标题翻译：聚合物辅助沉积膜
公开(公告)号：US20050008777A1
公开(公告)日：2005-01-13
申请号：US10616479
申请日：2003-07-08
申请人： Thomas McCleskey , Anthony Burrell , Quanxi Jia , Yuan Lin
发明人： Thomas McCleskey , Anthony Burrell , Quanxi Jia , Yuan Lin
IPC分类号： B05D3/02 , C08K3/00 , C09D5/00 , C23C18/02 , C23C18/12 , H01L39/24
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1279 , H01L21/02565 , H01L21/02628
摘要： A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
摘要翻译：提出了用于沉积金属氧化物膜的聚合物辅助沉积工艺。该方法包括一种或多种金属前体和对于一种或多种金属前体具有结合特性的可溶性聚合物的溶液。在涂覆操作之后，将所得涂层在高温下加热以产生金属氧化物膜。这样的膜可以在结构上外延，并且可以具有光学质量。该方法可以是无机溶剂。

60. 发明授权

US06656390B2 Preparation of energy storage materials 失效
标题翻译：储能材料的制备
公开(公告)号：US06656390B2
公开(公告)日：2003-12-02
申请号：US10349297
申请日：2003-01-21
申请人： Lin Song Li , Quanxi Jia
发明人： Lin Song Li , Quanxi Jia
IPC分类号： H01B108
CPC分类号： H01G9/155 , H01G9/042 , Y02E60/13 , Y02T10/7022
摘要： A process is provided for the preparation of a metallic oxide composite including mixing an aqueous solution of a water-soluble metal compound and colloidal silica, depositing the mixture upon a substrate, heating the mixture-coated substrates at temperatures from about 150° C. to about 300° C. for time sufficient to form a metallic oxide film, and, removing the silica from the metallic oxide film whereby a porous metal oxide structure is formed.
摘要翻译：提供了一种用于制备金属氧化物复合物的方法，包括混合水溶性金属化合物的水溶液和胶体二氧化硅，将混合物沉积在基材上，将混合物涂覆的基材在约150℃的温度下加热至约300℃，足以形成金属氧化物膜，并且从金属氧化物膜除去二氧化硅，从而形成多孔金属氧化物结构。

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