专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20100148114A1 POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD OF PRODUCING THE SAME AND NONAQUEOUS ELECTROLYTE BATTERY HAVING POSITIVE ELECTRODE CONTAINING POSITIVE ELECTRODE ACTIVE MATERIAL 有权
标题翻译：正极电极活性材料及其制造方法和具有包含正电极活性材料的正极的非电解电解质电池
公开(公告)号：US20100148114A1
公开(公告)日：2010-06-17
申请号：US12067782
申请日：2006-09-20
申请人： Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada , Shigeto Okada , Tomoko Iwanaga , Tomoyuki Shiratsuchi
发明人： Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada , Shigeto Okada , Tomoko Iwanaga , Tomoyuki Shiratsuchi
IPC分类号： H01M4/88
CPC分类号： H01M4/5825 , C01B25/45 , H01M4/136 , H01M4/366 , H01M4/625 , H01M10/052 , H01M2004/021
摘要： The present invention provides an olivine-type positive electrode active material that is an inexpensive and very safe positive electrode active material that also exhibits excellent battery properties even at high energy densities. The present invention also provides a method of producing this olivine-type positive electrode active material and a nonaqueous electrolyte battery that has a positive electrode that contains this olivine-type positive electrode active material. The present invention relates to a positive electrode active material that comprises an olivine-type lithium manganese phosphate compound represented by the following general formula (1) LixMnyMaPO4 (1) (in the formula, 0
摘要翻译：本发明提供一种廉价且非常安全的正极活性物质的橄榄石型正极活性物质，即使在高能量密度下也显示优异的电池特性。本发明还提供一种生产该橄榄石型正极活性物质和含有该橄榄石型正极活性物质的正极的非水电解质电池的方法。本发明涉及一种正极活性物质，其包含由以下通式（1）表示的橄榄石型磷酸锰锂化合物：LixMnyMaPO4（1）（式中，0

52. 发明授权

US07648935B2 Dielectric porcelain composition for use in electronic devices 失效
标题翻译：用于电子设备的介电瓷组合物
公开(公告)号：US07648935B2
公开(公告)日：2010-01-19
申请号：US11993700
申请日：2005-06-24
申请人： Takeshi Shimada , Kazuhiro Kura
发明人： Takeshi Shimada , Kazuhiro Kura
IPC分类号： C04B35/47
CPC分类号： H01B3/12 , C04B35/44 , C04B35/47 , C04B35/6262 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6585 , C04B2235/80 , C04B2235/85 , C04B2235/94
摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant ∈r is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.
摘要翻译：本发明旨在提供一种用于电子器件的电介质瓷组合物，其具有使Qf值高的介电特性，谐振频率的温度系数τf小，其值可以在宽范围内被控制根据本发明，当在La-Pr-Al-Ga-Sr-Ti系氧化物介电瓷中，各元素的含量限于在一定范围内，Sr部分被Ca取代，Ca是具有（1-x）（La1-yLny）（Al1-zGaz）O3-x（Sr1-mCam）TiO3固溶体作为主相的结构，其中a 可以获得Al-Ga-Sr系氧化物和/或Al-Ga系氧化物和Sr氧化物的固溶体在其晶界析出的固溶体，由此上述目的可以是实现了

53. 发明申请

US20090105064A1 SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20090105064A1
公开(公告)日：2009-04-23
申请号：US12299994
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/468
CPC分类号： H01L21/02197 , C01G29/006 , C01P2006/40 , C04B35/4682 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3234 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6584 , H01C7/025 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/02205 , H01L21/02255 , H01L21/31691 , H01L28/55
摘要： To provide a semiconductor ceramic composition containing no Pb in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of shifting the Curie temperate to a positive direction as well as of greatly lowering resistivity at room temperature, and a method for producing the same.BaTiO3 calcined powder and (BiNa)TiO3 calcined powder, which contain no semiconductive dopant, are prepared separately, the calcined powders are mixed, crushed, formed, and then sintered in an inert gas atmosphere having an oxygen concentration of 1% or less to obtain a semiconductor ceramic composition represented by a composition formula: [(BiNa)xBa1-x]TiO3 in which x satisfies 0
摘要翻译：为了提供一种不含Pb的半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na取代，Bi-Na能够使居里温带向正方向移动以及在室温下极大降低电阻率，以及方法为了生产相同。分别制备不含半导体掺杂剂的BaTiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末，将煅烧粉末混合，粉碎，形成，然后在氧浓度为1％以下的惰性气体气氛中烧结，得到由组成式：[（BiNa）xBa1-x] TiO3表示的半导体陶瓷组合物，其中x满足0

54. 发明申请

US20090057626A1 SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20090057626A1
公开(公告)日：2009-03-05
申请号：US12281896
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： H01B1/02
CPC分类号： H01C7/025 , C01G23/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/4682 , C04B35/6262 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/656 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/31691 , H01L28/55
摘要： It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein, and a BNT calcined powder containing a (BiNa)TiO3 powder.
摘要翻译：旨在提供能够将居里温度向正方向移动以及获得优异的跳跃特性同时将室温电阻率增加至最小值的半导体陶瓷组合物。提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，半导体陶瓷组合物通过烧结含有（BaR）TiO 3或Ba（TiM）O 3的BT煅烧粉末的混合煅烧粉末而获得（其中R和M各自为半导体掺杂剂），其中一部分BaCO 3和TiO 2保留在其中，以及含有（BiNa）TiO 3粉末的BNT煅烧粉末。

55. 发明授权

US06914207B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06914207B2
公开(公告)日：2005-07-05
申请号：US10688991
申请日：2003-10-21
申请人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
发明人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32862 , H01J37/321
摘要： In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
摘要翻译：在等离子体处理方法中，其包括向形成等离子体生产部件的真空容器供给处理气体，使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体，并且将高频电力并且进行处理时，向法拉第屏蔽件施加至少500V的电压，并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

56. 发明授权

US4499378A Infrared radiation gas analyzer 失效
标题翻译：红外辐射气体分析仪
公开(公告)号：US4499378A
公开(公告)日：1985-02-12
申请号：US473344
申请日：1983-03-08
申请人： Kimio Miyatake , Kozo Ishida , Hiroyuki Ebi , Takeshi Shimada
发明人： Kimio Miyatake , Kozo Ishida , Hiroyuki Ebi , Takeshi Shimada
IPC分类号： G01N21/31 , G01N21/35 , G01N21/71 , G01J1/00
CPC分类号： G01N21/71 , G01N21/3504 , G01N21/314 , G01N21/35
摘要： An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. An optical chopper is positioned outside the container for interrupting the radiation escaping from the container. A filter is positioned in the path of the radiation escaping from the container and transmits only radiation in the range. An infrared radiation detector is positioned for receiving the radiation passed by the filter and emitting a signal representative of the radiation received by the detector and which is representative of the concentration of the ingredient the concentration of which is to be determined in the sample gas.
摘要翻译：用于确定样品气体中成分浓度的红外辐射气体分析仪具有样品气体容器，该样品气体容器用于在其浓度将被确定的成分将发射红外辐射的温度下容纳样品气体，该成分和允许红外辐射从容器逸出的窗口。光学斩波器位于容器外部，用于中断从容器逸出的辐射。过滤器位于从容器逸出的辐射的路径中，并且仅透射该范围内的辐射。定位红外辐射检测器用于接收由过滤器通过的辐射，并发出代表由检测器接收的辐射的信号，其代表在样品气体中要确定其浓度的成分的浓度。

57. 发明授权

US09070388B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US09070388B2
公开(公告)日：2015-06-30
申请号：US13011019
申请日：2011-01-21
申请人： Kentaro Yamada , Takeshi Shimada , Takahiro Abe
发明人： Kentaro Yamada , Takeshi Shimada , Takahiro Abe
IPC分类号： C03C15/00 , C03C25/68 , C23F1/00 , B44C1/22 , H01L21/302 , H01L21/461 , G11B5/31 , C23F4/00 , H01F41/34
CPC分类号： G11B5/3163 , C23F4/00 , H01F41/34
摘要： In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.
摘要翻译：在对200nm〜500nm的厚度的磁性膜进行干蚀刻的等离子体处理方法中，对具有含有抗蚀剂膜的多层膜的磁性膜的试样进行干法蚀刻的等离子体处理方法， - 抗蚀剂膜下面的无机膜，非有机膜下面的Cr膜和Cr膜下面的Al 2 O 3膜。

58. 发明授权

US08621457B2 System and method for installing software applications 有权
标题翻译：用于安装软件应用程序的系统和方法
公开(公告)号：US08621457B2
公开(公告)日：2013-12-31
申请号：US12617592
申请日：2009-11-12
申请人： Kenji Yamamoto , Tsutomu Kaneshige , Yusuke Shibata , Takeshi Shimada
发明人： Kenji Yamamoto , Tsutomu Kaneshige , Yusuke Shibata , Takeshi Shimada
IPC分类号： G06F9/445
CPC分类号： G06F8/61 , G06F3/04817 , G06F3/0482 , G06F8/60 , G06F9/451
摘要： An example method of installing an application onto an apparatus involves displaying an application menu screen comprising a fixed number of menu item display locations, at least one of the menu item display locations displaying a first menu item for an non-installed application. An announcement screen is displayed in response to selection of the first menu item for the non-installed application, the announcement screen comprising a selection item configured to initiate a downloading operation for the non-installed application. The downloading operation is initiated in response to selection of the selection item. The application can be installed/non-installed separately from other applications.
摘要翻译：将应用程序安装到设备上的示例性方法包括显示包括固定数量的菜单项显示位置的应用菜单屏幕，显示用于未安装应用的第一菜单项的菜单项显示位置中的至少一个。响应于未安装应用的第一菜单项的选择显示公告屏幕，所述通知屏幕包括被配置为启动未安装应用的下载操作的选择项。响应于选择项目的选择而启动下载操作。该应用程序可以与其他应用程序分开安装/未安装。

59. 发明授权

US08591752B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08591752B2
公开(公告)日：2013-11-26
申请号：US13399030
申请日：2012-02-17
申请人： Takahiro Abe , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
发明人： Takahiro Abe , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
IPC分类号： B44C1/22 , B08B9/00
CPC分类号： H01J37/321 , C23F4/00 , C23G5/00 , H01J2237/334 , H01L43/12
摘要： A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
摘要翻译：提供了一种用于等离子体蚀刻磁性膜和等离子体清洁的方法，其中在蚀刻处理室中的沉积物被有效地去除，同时腐蚀晶片被抑制。在蚀刻处理室中对具有磁性膜的被处理基板进行等离子体蚀刻的等离子体处理方法包括使用不含氯的第一气体等离子体蚀刻磁性膜的步骤，将待处理的来自蚀刻处理室的衬底，首先使用含氯的第二气体对蚀刻处理室进行等离子体清洁，以及在第一等离子体清洗之后使用含有氢的第三气体进行第二等离子体清洁。

60. 发明申请

US20130146563A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20130146563A1
公开(公告)日：2013-06-13
申请号：US13399030
申请日：2012-02-17
申请人： Takahiro ABE , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
发明人： Takahiro ABE , Takeshi Shimada , Atsushi Yoshida , Kentaro Yamada , Daisuke Fujita
IPC分类号： H01F41/00
CPC分类号： H01J37/321 , C23F4/00 , C23G5/00 , H01J2237/334 , H01L43/12
摘要： A method for plasma-etching a magnetic film and plasma-cleaning, in which deposits in an etching processing chamber are efficiently removed while corrosion of a wafer is suppressed, is provided. A plasma processing method for plasma-etching a to-be-processed substrate having a magnetic film in an etching processing chamber includes the steps of plasma-etching the magnetic film using a first gas not containing chlorine, transferring out the to-be-processed substrate from the etching processing chamber, first plasma-cleaning of the etching processing chamber using a second gas containing chlorine, and second plasma-cleaning using a third gas containing hydrogen after the first plasma cleaning.
摘要翻译：提供了一种用于等离子体蚀刻磁性膜和等离子体清洁的方法，其中在蚀刻处理室中的沉积物被有效地去除，同时腐蚀晶片被抑制。在蚀刻处理室中对具有磁性膜的被处理基板进行等离子体蚀刻的等离子体处理方法包括使用不含氯的第一气体等离子体蚀刻磁性膜的步骤，将待处理的来自蚀刻处理室的衬底，首先使用含氯的第二气体对蚀刻处理室进行等离子体清洁，以及在第一等离子体清洗之后使用含有氢的第三气体进行第二等离子体清洁。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式