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    • 51. 发明授权
    • Micro electro mechanical device and manufacturing method thereof
    • 微机电装置及其制造方法
    • US07642114B2
    • 2010-01-05
    • US11777409
    • 2007-07-13
    • Mayumi YamaguchiKonami Izumi
    • Mayumi YamaguchiKonami Izumi
    • H01L21/00
    • H01L29/84B81B2201/034B81C1/00246B81C2203/0742
    • To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
    • 在相同的步骤中,在相同的绝缘表面上制造包括在微机电装置中的微结构和电路。 在微机电装置中,包括晶体管和微结构的电路集成在具有绝缘表面的基板上。 微结构包括具有与晶体管的栅极绝缘层的层叠体和设置在栅极绝缘层上的半导体层相同的层叠结构的结构层。 也就是说,结构层包括由与绝缘层相同的绝缘膜形成的层和由与晶体管的半导体层相同的半导体膜形成的层。 此外,通过使用用作晶体管的栅电极,源电极和漏电极的导电层作为牺牲层来制造微结构。
    • 58. 发明授权
    • MEMS switch
    • MEMS开关
    • US08324694B2
    • 2012-12-04
    • US12269146
    • 2008-11-12
    • Mayumi MikamiKonami Izumi
    • Mayumi MikamiKonami Izumi
    • H01L29/82
    • H01H59/0009H01H2059/0072
    • An object is that contact between an upper switch electrode and a lower switch electrode is not hindered. The present invention relates to a MEMS switch including a substrate; a structural layer with a beam structure in which at least one end is fixed to the substrate; a lower drive electrode layer and a lower switch electrode layer which are provided below the structural layer and on a surface of the substrate; and an upper drive electrode layer and an upper switch electrode layer which are provided on a surface of the structural layer, which is opposite to the substrate, so as to face the lower drive electrode layer and the lower switch electrode layer, respectively, in which the upper switch electrode layer is larger than the lower switch electrode layer.
    • 目的是不妨碍上开关电极和下开关电极之间的接触。 本发明涉及一种包括基板的MEMS开关; 具有梁结构的结构层,其中至少一个端部固定到所述基板; 下部驱动电极层和下部开关电极层,其设置在所述结构层的下方和所述基板的表面上; 以及设置在与基板相对的结构层的表面上的上驱动电极层和上开关电极层,以分别面向下驱动电极层和下开关电极层,其中 上开关电极层大于下开关电极层。
    • 59. 发明授权
    • Micromachine and method for manufacturing the same
    • 微机械及其制造方法
    • US07999335B2
    • 2011-08-16
    • US12327341
    • 2008-12-03
    • Mayumi MikamiKonami Izumi
    • Mayumi MikamiKonami Izumi
    • H01L29/84
    • H01H59/0009B81B2201/018B81C1/00166H01H1/58H01H2001/0052H01H2001/0057Y10T29/49155
    • A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.
    • 在形成有表面微机械加工技术的微型机械(MEMS机构)中,提供了防止配线断线和断线的结构。 在牺牲层之上的布线(上辅助布线)在牺牲层上电连接到不同的布线(上连接布线),从而在生成的台阶部分上形成在牺牲层上的布线的变薄,断开等 由于可以防止牺牲层的厚度。 牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成,因此薄。 然而,不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上,并且具有200nm至1μm的厚度,从而可以进一步布线的变薄,断开等 防止了