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51. 发明申请

US20090009028A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20090009028A1
公开(公告)日：2009-01-08
申请号：US12234836
申请日：2008-09-22
申请人： Kenji Nishiyama , Takeshi Nakao , Michio Kadota
发明人： Kenji Nishiyama , Takeshi Nakao , Michio Kadota
IPC分类号： H03H9/64
CPC分类号： H03H9/02559
摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, 0±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, 0±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp (−1×TAu/0.0138) Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.
摘要翻译：利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，0±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Au的电极，设置在除了上述电极的区域以外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于上述电极的厚度，以及布置成覆盖电极和第一氧化硅膜的第二氧化硅膜，其中电极的膜厚度在约0.062λ至约0.14λ的范围内，其中λ表示声表面波的波长，θ表示（0°±5°，0±5°，0°±10°）的上述欧拉角在满足下式（1）的范围内：<？在线公式描述=“In- 行公式“end =”lead“？> theta = 31.72-206.92xexp（-1xTAu / 0.0138）式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中TAu是用波长λ标准化的Au电极膜厚度的值。

52. 发明授权

US07345400B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07345400B2
公开(公告)日：2008-03-18
申请号：US11674816
申请日：2007-02-14
申请人： Takeshi Nakao , Masakazu Mimura , Michio Kadota
发明人： Takeshi Nakao , Masakazu Mimura , Michio Kadota
IPC分类号： H03H9/64 , H03H3/10 , H03H9/25
CPC分类号： H03H9/02559
摘要： In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.
摘要翻译：在表面声波装置中，构成至少一个IDT的电极膜设置在压电基板上，并且在压电基板上设置SiO 2膜以覆盖电极膜。电极膜的膜厚度在激发的表面声波的波长的约1％至约3％的范围内。

53. 发明授权

US07339304B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07339304B2
公开(公告)日：2008-03-04
申请号：US10595237
申请日：2004-08-06
申请人： Michio Kadota , Takeshi Nakao , Takuo Hada
发明人： Michio Kadota , Takeshi Nakao , Takuo Hada
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H3/08
摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.
摘要翻译：表面声波装置包括由LiNbO 3 3制成的压电基片，其具有至少约0.025的方形的机电耦合系数k，至少一个由密度高于其的金属制成的电极。的Al或主要包含金属的合金，或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成，所述电极设置在压电基板上，第一绝缘层，其设置在除设置所述至少一个电极的区域以外的区域中，所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。密度

54. 发明授权

US07230365B2 Surface acoustic wave apparatus and manufacturing method therefor 有权
标题翻译：表面声波装置及其制造方法
公开(公告)号：US07230365B2
公开(公告)日：2007-06-12
申请号：US10448061
申请日：2003-05-30
申请人： Kenji Nishiyama , Takeshi Nakao , Michio Kadota
发明人： Kenji Nishiyama , Takeshi Nakao , Michio Kadota
IPC分类号： H01L41/08
CPC分类号： H03H9/02929 , H03H3/10 , H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49016 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.
摘要翻译：在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。去除残留在第一绝缘层上的抗蚀剂图案。形成第二绝缘层以覆盖第一绝缘层和IDT电极。

55. 发明授权

US07208860B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07208860B2
公开(公告)日：2007-04-24
申请号：US11268274
申请日：2005-11-03
申请人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
发明人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49126 , Y10T29/49128 , Y10T29/49156
摘要： A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
摘要翻译：表面声波装置具有高的机电系数和反射系数，并且还具有通过在IDT上形成SiO 2膜而实现的改善的频率温度特性，以防止在 SiO 2膜的表面，使得可以可靠地获得期望的性能。表面声波装置包括至少一个IDT，其由密度高于Al的金属或合金构成，并且形成在25°至55°的旋转Y板X传播LiTaO 3上， / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

56. 发明申请

US20060158069A1 Surface acoustic wave device 有权
公开(公告)号：US20060158069A1
公开(公告)日：2006-07-20
申请号：US11374784
申请日：2006-03-14
申请人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
发明人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
IPC分类号： H03H9/25
CPC分类号： H03H9/14538 , H03H9/009 , H03H9/02094 , H03H9/02897 , H03H9/02929 , H03H9/02944 , H03H9/25 , H03H9/6483
摘要： A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.

57. 发明授权

US07009468B2 Surface acoustic wave device and electronic device using the same 有权
标题翻译：声表面波装置及使用其的电子装置
公开(公告)号：US07009468B2
公开(公告)日：2006-03-07
申请号：US10132281
申请日：2002-04-26
申请人： Michio Kadota , Koji Fujimoto , Takeshi Nakao
发明人： Michio Kadota , Koji Fujimoto , Takeshi Nakao
IPC分类号： H03H9/64
CPC分类号： H03H9/02637 , H03H9/02551 , H03H9/6436 , H03H9/6463 , H03H9/6483
摘要： A small, high-performance SAW device has a large electromechanical coupling coefficient and a small number of fingers constituting reflectors, and is constructed such that losses due to electric resistance of the fingers. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Au are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, θ, 90°±2°), wherein the angle θ is within the range of about 110° to about 150° and a normalized film thickness (H/λ) of the fingers is within the range of about 0.003 to about 0.095.
摘要翻译：小型高性能SAW器件具有大的机电耦合系数和少数构成反射器的指状物，并且被构造成使得由于手指的电阻而引起的损失。在具有多个第一指状物和第二指状物的SAW器件中，分别配置在石英衬底上，构成用于激发SH波的IDT和用于反射SH波的反射器，主要由Au形成的第一和第二指状物设置在ST （0°，θ，90°±2°）的切割的90°X传播石英衬底，其中角度θ在约110°至约150°的范围内，标准化膜厚度（H / 指数的范围在约0.003至约0.095的范围内。

58. 发明授权

US06836196B2 Surface acoustic wave apparatus utilizing a leaky surface acoustic wave 有权
标题翻译：利用泄漏表面声波的声表面波装置
公开(公告)号：US06836196B2
公开(公告)日：2004-12-28
申请号：US10329950
申请日：2002-12-27
申请人： Michio Kadota , Takeshi Nakao
发明人： Michio Kadota , Takeshi Nakao
IPC分类号： H03H964
CPC分类号： H03H9/02559 , H03H3/10 , H03H9/14538
摘要： A surface acoustic wave apparatus has an improved frequency temperature characteristic due to an arrangement of a SiO2 film on an IDT such that cracks in the SiO2 film surface are prevented from occurring, desired characteristics are reliably achieved, the electromechanical coefficient is increased, and the attenuation constant &agr; is reduced. The surface acoustic wave apparatus includes at least one IDT primarily including Cu and arranged on a 23° to 46°-rotated Y plate LiTaO3 substrate. The SiO2 film is arranged on the LiTaO3 substrate so as to cover the at least one IDT.
摘要翻译：表面声波装置由于在IDT上设置SiO 2膜而具有改善的频率温度特性，从而可以防止发生SiO 2膜表面的裂纹，可靠地获得期望的特性，增加机电系数，并且衰减常数α降低。表面声波装置包括至少一个主要包括Cu的IDT，并布置在23°至46°旋转的Y板LiTaO 3基板上。 SiO 2膜布置在LiTaO 3衬底上以覆盖至少一个IDT。

59. 发明授权

US06806796B2 End-surface reflection type surface acoustic wave filter 有权
公开(公告)号：US06806796B2
公开(公告)日：2004-10-19
申请号：US10725872
申请日：2003-12-02
申请人： Michio Kadota , Hideya Horiuchi , Junya Ago , Takeshi Nakao , Yasuhiro Kuratani
发明人： Michio Kadota , Hideya Horiuchi , Junya Ago , Takeshi Nakao , Yasuhiro Kuratani
IPC分类号： H03H900
CPC分类号： H03H9/02984 , H03H9/02669
摘要： An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.

60. 发明授权

US08658097B2 Sensor for detecting substance in liquid 有权
标题翻译：用于检测液体中物质的传感器
公开(公告)号：US08658097B2
公开(公告)日：2014-02-25
申请号：US12273569
申请日：2008-11-19
申请人： Kenjiro Okaguchi , Takuo Hada , Michio Kadota
发明人： Kenjiro Okaguchi , Takuo Hada , Michio Kadota
IPC分类号： G01N15/06 , G01N21/75
CPC分类号： G01N29/022 , G01N2291/0255 , G01N2291/0256 , G01N2291/0423
摘要： A sensor for detecting a substance in liquid includes a sensing circuit including a sensing surface acoustic wave (SAW) element in which a reaction film to react with a substance in liquid, a reference circuit including a reference SAW element including an IDT and not including a reaction film, a first signal source driving the sensing circuit, a second signal source driving the reference circuit and being independent of the first signal source, and a differential circuit arranged to output a differential output between an output of the sensing circuit and an output of the reference circuit. The frequency of a first frequency signal output from the first signal source is different from the frequency of a second frequency signal output from the second signal source, thereby making a driving frequency for the sensing SAW element and a driving frequency for the reference SAW element substantially the same as or different from one another.
摘要翻译：用于检测液体中的物质的传感器包括感测电路，其包括感测声表面波（SAW）元件，其中反应膜与液体中的物质反应，参考电路包括包括IDT的参考SAW元件，并且不包括反应膜，驱动感测电路的第一信号源，驱动参考电路并独立于第一信号源的第二信号源，以及差分电路，布置成在感测电路的输出和输出之间输出差分输出参考电路。从第一信号源输出的第一频率信号的频率与从第二信号源输出的第二频率信号的频率不同，从而使感测用SAW元件的驱动频率和基准SAW元件的驱动频率基本上彼此相同或不同。

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