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    • 51. 发明申请
    • Substrate holding apparatus and polishing apparatus
    • 基板保持装置和抛光装置
    • US20080119121A1
    • 2008-05-22
    • US11987978
    • 2007-12-06
    • Tetsuji TogawaOsamu NabeyaMakoto FukushimaKunihiko SakuraiHiroshi YoshidaTeruhiko Ichimura
    • Tetsuji TogawaOsamu NabeyaMakoto FukushimaKunihiko SakuraiHiroshi YoshidaTeruhiko Ichimura
    • B24B7/04B24B29/02
    • B24B37/30B24B41/061B24B49/105
    • The present invention relates to a substrate holding apparatus for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus according to the present invention comprises a top ring body having a receiving space therein, and a vertically movable member which is vertically movable within the receiving space in the top ring body. An abutment member having an elastic membrane is attached to a lower surface of the vertically movable member. The elastic membrane of the abutment member comprises an abutment portion, having a flange projecting outwardly, brought into direct or indirect contact with the substrate, and a connecting portion extending upwardly from a base portion of the flange of the abutment portion and being connected to the vertically movable member. The connecting portion is made of a material having a flexibility higher than that of material of the abutment portion.
    • 本发明涉及一种用于将基板(例如半导体晶片)保持在用于将基板抛光到抛光装置的平面光洁度的基板保持装置。 根据本发明的基板保持装置包括其中具有容纳空间的顶环主体和可在顶环体中的容纳空间内垂直移动的可垂直移动的构件。 具有弹性膜的邻接构件附接到可垂直移动构件的下表面。 邻接构件的弹性膜包括邻接部分,其具有向外突出的凸缘,与基底直接或间接接触;以及连接部分,其从邻接部分的凸缘的基部向上延伸并连接到 垂直活动件。 连接部由具有高于邻接部的材料的柔软性的材料制成。
    • 56. 发明授权
    • Method for fabricating nonvolatile semiconductor memory device
    • 制造非易失性半导体存储器件的方法
    • US07344976B2
    • 2008-03-18
    • US11377452
    • 2006-03-17
    • Hiroshi YoshidaTakumi Mikawa
    • Hiroshi YoshidaTakumi Mikawa
    • H01L21/4763
    • H01L27/11507H01L27/11502H01L28/57
    • An adhesion layer composed of a titanium film and a titanium nitride film is formed by CVD on the inner wall of a contact hole formed in a multilayer film composed of an interlayer insulating film, a silicon nitride film, and a silicon dioxide film. Then, a conductive film made of tungsten or polysilicon is filled by CVD in the contact hole and the respective portions of the conductive film and the adhesion layer which are located over the silicon dioxide film are removed by CMP. Subsequently, the silicon dioxide film is removed by an etch-back method or a CMP method so that the silicon nitride film is exposed. This can prevent the delamination of the adhesion layer from the silicon nitride film as a hydrogen barrier film and also prevent the formation of a scratch in the silicon nitride film.
    • 在由层间绝缘膜,氮化硅膜和二氧化硅膜构成的多层膜中形成的接触孔的内壁上通过CVD形成由钛膜和氮化钛膜构成的粘合层。 然后,通过CVD在接触孔中填充由钨或多晶硅制成的导电膜,并且通过CMP去除位于二氧化硅膜上方的导电膜和粘附层的各个部分。 随后,通过蚀刻方法或CMP方法去除二氧化硅膜,以使氮化硅膜露出。 这可以防止作为氢阻挡膜的粘合层从氮化硅膜分层,并且还防止在氮化硅膜中形成划痕。