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51. 发明申请

US20090221146A1 Nonvolatile memory device and manufacturing method for the same 审中-公开
标题翻译：非易失存储器件及其制造方法相同
公开(公告)号：US20090221146A1
公开(公告)日：2009-09-03
申请号：US12379772
申请日：2009-02-27
申请人： Akiyoshi Seko , Natsuki Sato , Isamu Asano
发明人： Akiyoshi Seko , Natsuki Sato , Isamu Asano
IPC分类号： H01L21/306
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/1246 , H01L45/128 , H01L45/144 , H01L45/1675
摘要： The object of the present invention is to provide a manufacturing method for a nonvolatile memory device including a variable resistance having a constricted shape. The nonvolatile memory device of the present invention has a storage section composed of two electrodes and a variable resistance sandwiched between the electrodes. The variable resistance is formed to a constricted shape between the electrodes.
摘要翻译：本发明的目的是提供一种包括具有收缩形状的可变电阻的非易失性存储装置的制造方法。本发明的非易失性存储器件具有由两个电极组成的存储部分和夹在电极之间的可变电阻。可变电阻形成为电极之间的缩小形状。

52. 发明申请

US20080061282A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080061282A1
公开(公告)日：2008-03-13
申请号：US11849522
申请日：2007-09-04
申请人： Natsuki Sato , Tsutomu Hayakawa
发明人： Natsuki Sato , Tsutomu Hayakawa
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.
摘要翻译：相变存储器包括形成在下电极上的层间绝缘膜中的接触孔中的侧壁绝缘膜和加热电极。加热电极具有凹陷结构。在由侧壁绝缘膜包围的凹陷区域中，加热器电极和相变膜彼此接触。相变区仅形成在与侧壁绝缘膜接触的区域中。侧壁绝缘膜是抗氧化绝缘膜。在重写时被加热到高温的相变区域和加热器电极不与作为氧化绝缘膜的层间绝缘膜接触。

53. 发明申请

US20070096074A1 Electrically rewritable non-volatile memory element and method of manufacturing the same 有权
标题翻译：电可重写非易失性存储元件及其制造方法
公开(公告)号：US20070096074A1
公开(公告)日：2007-05-03
申请号：US11264129
申请日：2005-11-02
申请人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
发明人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13. Therefore, when a pore 14a is formed by dielectric breakdown in a thin-film insulation layer 14 and the vicinity is used as a heating region, the amount of heat escaping to the bottom electrode 13 is decreased, resulting in higher heating efficiency.
摘要翻译：非易失性存储元件包括具有第一通孔11a的第一层间绝缘层11，具有形成在第一层间绝缘层11上的第二通孔12a的第二层间绝缘层12，在第一通孔11中，设置在第二通孔12中的包含相变材料的记录层15，设置在第二层间绝缘层12上的顶部电极16和形成在第二通孔12的底部电极之间的薄膜绝缘层14 13和记录层15。根据本发明，埋在第一通孔11a中的底部电极13的直径D 1小于第二通孔12a的直径D 2，从而降低底部电极13的热容量。因此，当通过薄膜绝缘层14中的电介质击穿形成孔14a并且将其附近用作加热区域时，逸出到底部电极13的热量减少，导致更高的加热效率。

54. 发明申请

US20070018149A1 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070018149A1
公开(公告)日：2007-01-25
申请号：US11490073
申请日：2006-07-21
申请人： Natsuki Sato
发明人： Natsuki Sato
IPC分类号： H01L47/00
CPC分类号： H01L45/124 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1691
摘要： In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not increased in volume even if the number of times of rewriting is increased. Since the volume of the phase change region is not changed, an electric current level required for rewriting is constant. Thus, the semiconductor device having a memory cell capable of carrying out stable rewriting is obtained.
摘要翻译：在半导体器件中，相变层形成为侧壁，因此体积减小。即使重写次数少，相变层也被完全用作相变区域。因此，即使重写次数增加，相变区域也不会增加。由于相变区域的体积没有变化，重写所需的电流水平是恒定的。因此，获得具有能够执行稳定重写的存储单元的半导体器件。

55. 发明授权

US06748675B2 Sole assembly for sports shoe 有权
标题翻译：运动鞋独家组装
公开(公告)号：US06748675B2
公开(公告)日：2004-06-15
申请号：US10163555
申请日：2002-06-05
申请人： Natsuki Sato
发明人： Natsuki Sato
IPC分类号： A43B732
CPC分类号： A43B13/12 , A43B13/223
摘要： A sole assembly (1) for a sports shoe includes an upper layer (10), a middle layer (20) and a lower layer (30), which are integral with each other. The upper layer (10) and the lower layer (30) are formed of soft elastic materials, such as foamed rubber or the like. The middle layer (20) has a sheet (22) formed of synthetic resin or synthetic rubber with a hardness greater than that of the upper layer (10) and the lower layer (30). The sheet (22) has a plurality of protrusions or cleats (21) of truncated cone-shape that protrude downwardly and that are formed integrally with the sheet (22). The lower layer (30) has a plurality of through holes (31) receiving respective cleats (21) for insertion thereinto. The lower layer (30) made of a soft elastic member secures gripping properties and shock absorbing properties. An edge portion of a distal end (21a) of the cleat (21) advances the gripping properties by contacting the ground.
摘要翻译：用于运动鞋的鞋底组件（1）包括彼此成一体的上层（10），中间层（20）和下层（30）。上层（10）和下层（30）由柔软的弹性材料如发泡橡胶等形成。中间层（20）具有由合成树脂或合成橡胶形成的硬度大于上层（10）和下层（30）的硬度的片材（22）。片材（22）具有向下突出并与片材（22）一体形成的多个截头锥形的突起或夹板（21）。下层（30）具有多个通孔（31），该通孔（31）容纳用于插入其中的各个防滑板（21）。由软弹性构件制成的下层（30）确保了夹持性能和冲击吸收性能。防滑板（21）的远端（21a）的边缘部分通过接触地面而使夹持性能提前。

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