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51. 发明授权

US08488642B2 Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode 失效
标题翻译：氮化镓系半导体发光元件及其制造方法，氮化镓系发光二极管，外延晶片及氮化镓系发光二极管的制造方法
公开(公告)号：US08488642B2
公开(公告)日：2013-07-16
申请号：US13082101
申请日：2011-04-07
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Takashi Kyono
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Takashi Kyono
IPC分类号： H01S5/00 , H01S5/02
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01S5/22 , H01S5/3201 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S5/34333 , H01S2304/04
摘要： Provided is a gallium nitride based semiconductor light-emitting device with a structure capable of enhancing the degree of polarization. A light-emitting diode 11a is provided with a semiconductor region 13, an InGaN layer 15 and an active layer 17. The semiconductor region 13 has a primary surface 13a having semipolar nature, and is made of GaN or AlGaN. The primary surface 13a of the semiconductor region 13 is inclined at an angle α with respect to a plane Sc perpendicular to a reference axis Cx which extends in a direction of the [0001] axis in the primary surface 13a. The thickness D13 of the semiconductor region 13 is larger than the thickness DInGaN of the InGaN layer 17, and the thickness DInGaN of the InGaN layer 15 is not less than 150 nm. The InGaN layer 15 is provided directly on the primary surface 13a of the semiconductor region 13 and is in contact with the primary surface 13a. The active layer 17 is provided on a primary surface 15a of the InGaN layer 15 and is in contact with this primary surface 15a. The active layer 17 includes well layers 21 of InGaN.
摘要翻译：提供了具有能够提高极化度的结构的氮化镓系半导体发光元件。发光二极管11a设置有半导体区域13，InGaN层15和有源层17.半导体区域13具有半极性的主表面13a，并且由GaN或AlGaN制成。半导体区域13的主表面13a相对于垂直于在主表面13a中的[0001]轴方向延伸的参考轴线Cx的平面Sc倾斜角度α。半导体区域13的厚度D13大于InGaN层17的厚度DInGaN，并且InGaN层15的厚度DInGaN不小于150nm。 InGaN层15直接设置在半导体区域13的主表面13a上并与主表面13a接触。有源层17设置在InGaN层15的主表面15a上并与该主表面15a接触。有源层17包括InGaN的阱层21。

52. 发明授权

US07955881B2 Method of fabricating quantum well structure 有权
标题翻译：量子阱结构的制作方法
公开(公告)号：US07955881B2
公开(公告)日：2011-06-07
申请号：US12500074
申请日：2009-07-09
申请人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
发明人： Katsushi Akita , Takamichi Sumitomo , Yohei Enya , Takashi Kyono , Masaki Ueno
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/06
摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.
摘要翻译：在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。阱层包含含有铟作为成分的III族氮化物半导体。在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。阻挡层在高于第一温度的第二温度下在中间层上生长。包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

53. 发明授权

US08476615B2 GaN-based semiconductor light emitting device and the method for making the same 失效
标题翻译： GaN系半导体发光元件及其制造方法
公开(公告)号：US08476615B2
公开(公告)日：2013-07-02
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

54. 发明申请

US20120061643A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME 失效
标题翻译：基于GaN的半导体发光器件及其制造方法
公开(公告)号：US20120061643A1
公开(公告)日：2012-03-15
申请号：US13295840
申请日：2011-11-14
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/3202 , H01S5/3403 , H01S5/34333
摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.
摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13，低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。基板13的位错密度为1×10 7 cm -2以下。在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

55. 发明授权

US08173458B2 Method for forming quantum well structure and method for manufacturing semiconductor light emitting element 有权
标题翻译：用于形成量子阱结构的方法和用于制造半导体发光元件的方法
公开(公告)号：US08173458B2
公开(公告)日：2012-05-08
申请号：US12417857
申请日：2009-04-03
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/0075 , H01L33/06
摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.
摘要翻译：提供一种用于形成能够减小阱层厚度方向的In组成的变化的量子阱结构的方法和半导体发光元件的制造方法。在通过在GaN衬底的主表面上交替生长势垒层和阱层来形成量子阱结构（有源层）的步骤中，阱层各自通过生长InGaN形成，阻挡层各自在第一温度下生长阱层各自在比第一温度低的第二温度下生长，并且当各层形成阱层时，在提供用于Ga（三甲基镓）的原料气体之前，用于In的原料气体为提供。

56. 发明授权

US08124430B2 Method for forming quantum well structure and method for manufacturing semiconductor light emitting element 有权
公开(公告)号：US08124430B2
公开(公告)日：2012-02-28
申请号：US12417857
申请日：2009-04-03
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01L21/00
摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.

57. 发明授权

US08107507B2 Group III nitride semiconductor element and epitaxial wafer 有权
标题翻译： III族氮化物半导体元件和外延晶片
公开(公告)号：US08107507B2
公开(公告)日：2012-01-31
申请号：US12965633
申请日：2010-12-10
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01S5/00
CPC分类号： H01L21/0242 , B82Y20/00 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
摘要翻译：发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

58. 发明授权

US08228963B2 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer 失效
标题翻译：氮化镓系半导体光学元件，氮化镓系半导体光学元件的制造方法以及外延片
公开(公告)号：US08228963B2
公开(公告)日：2012-07-24
申请号：US12715860
申请日：2010-03-02
申请人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
发明人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
IPC分类号： H01S5/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
摘要翻译：提供一种氮化镓系半导体光学元件，其包括显示低压电效应和高结晶质量的含铟氮化镓系半导体层。氮化镓系半导体光学元件11a包括GaN支撑基底13，GaN基半导体区域15以及阱层19.初级表面13a从与从一个晶体的方向延伸的参考轴正交的表面倾斜 m轴的a轴和另一个晶轴的GaN的a轴。倾角AOFF为0.05度以上至小于15度。角度AOFF等于由矢量VM和矢量VN定义的角度。主表面的倾角由典型的m面SM和m轴矢量VM表示。 GaN基半导体区域15设置在主表面13a上。在有源层17的阱层19中，阱层19的m面和a面都从主面13a的法线轴AN倾斜。阱层19的铟含量为0.1以上。

59. 发明授权

US07873088B2 Group III nitride semiconductor element and epitaxial wafer 有权
标题翻译： III族氮化物半导体元件和外延晶片
公开(公告)号：US07873088B2
公开(公告)日：2011-01-18
申请号：US12779769
申请日：2010-05-13
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01S5/00
CPC分类号： H01L21/0242 , B82Y20/00 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
摘要翻译：发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

60. 发明授权

US08391327B2 Group III nitride semiconductor element and epitaxial wafer 有权
标题翻译： III族氮化物半导体元件和外延晶片
公开(公告)号：US08391327B2
公开(公告)日：2013-03-05
申请号：US13343595
申请日：2012-01-04
申请人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
发明人： Yusuke Yoshizumi , Yohei Enya , Masaki Ueno , Fumitake Nakanishi
IPC分类号： H01S5/00
CPC分类号： H01L21/0242 , B82Y20/00 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333
摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.
摘要翻译：发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角A为0.05度以上且2度以下。 GaN支撑基底的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角B为0.05度以上且2度以下。相对于GaN支撑基体的c面，倾斜角A和B形成在彼此相反的各个方向上。

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