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51. 发明申请

US20050280021A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20050280021A1
公开(公告)日：2005-12-22
申请号：US11152789
申请日：2005-06-15
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama
IPC分类号： H01L29/24 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： H01S5/227 , H01L33/06 , H01S5/2004 , H01S5/305 , H01S5/3211
摘要： In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.
摘要翻译：在半导体光学器件中，在GaAs的表面上设置第一导电型半导体区域。第一导电型半导体区域具有第一区域和第二区域。有源层设置在第一导电类型半导体区域的第一区域上。活性层具有一对侧表面。第二导电型半导体区域设置在有源层的侧面和顶部以及第一导电类型半导体区域的第二区域上。第一导电型半导体区域的带隙能量大于有源层的带隙能量。第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第二区域构成pn结。

52. 发明申请

US20050220391A1 Optical integrated device 失效
标题翻译：光学集成器件
公开(公告)号：US20050220391A1
公开(公告)日：2005-10-06
申请号：US11089019
申请日：2005-03-25
申请人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
发明人： Jun-ichi Hashimoto , Tsukuru Katsuyama , Kenji Koyama
IPC分类号： H01S5/026 , G02B6/12 , G02B6/122 , G02B6/13 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/131 , G02B2006/121 , H01S5/026 , H01S5/162 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S5/3434
摘要： The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
摘要翻译：本发明提供一种将有源器件与无源器件集成而不在两个器件之间没有对接结构的光学器件。本发明的光集成器件包括GaAs衬底，第一和第二覆层，以及由第一和第二覆层夹持的有源层。这些层设置在GaAs衬底上。 GaAs衬底提供第一区域和第二区域。有源层包括设置在第一区域上的第一有源层和设置在GaAs衬底的第二区域上的第二有源层。第一有源层具有量子阱结构，其带隙能量小于1.3eV，而第二有源层具有带隙能量大于第一有源层的量子阱结构的量子阱结构。

53. 发明申请

US20050220158A1 Optical integrated device 审中-公开
标题翻译：光学集成器件
公开(公告)号：US20050220158A1
公开(公告)日：2005-10-06
申请号：US11091337
申请日：2005-03-29
申请人： Kenji Koyama , Jun-ichi Hashimoto , Tsukuru Katsuyama
发明人： Kenji Koyama , Jun-ichi Hashimoto , Tsukuru Katsuyama
IPC分类号： G02B6/122 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12078 , H01L27/15 , H01S5/2004 , H01S5/222 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S2304/04
摘要： The present invention is to provide an optical integrated device formed on the GaAs substrate and with reduced dispersion of the optical coupling of the but-joint between the active and the passive devices. The GaAs substrate of the invention is divided into two regions, and the lower cladding layer extends over both regions. The active layer, having a quantum well structure with band-gap energy smaller than 1.3 eV, is arranged of the lower cladding layer in the first region, while the GaAs core layer is also arranged on the lower cladding layer but in the second region thereof. Thus, the cure layer may optically couple with the active layer.
摘要翻译：本发明是提供一种在GaAs衬底上形成的光学集成器件，并且在有源器件和无源器件之间的耦合的光耦合的分散性降低。本发明的GaAs衬底分为两个区域，下覆层在两个区域上延伸。具有小于1.3eV的带隙能量的量子阱结构的有源层在第一区域中被布置成下包层，而GaAs芯层也布置在下包层上，但在其第二区域中。因此，固化层可以与活性层光学耦合。

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