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51. 发明授权

US10163648B2 Method of semiconductor device fabrication having application of material with cross-linkable component 有权
公开(公告)号：US10163648B2
公开(公告)日：2018-12-25
申请号：US15599851
申请日：2017-05-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Wei-Han Lai , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： H01L21/308 , H01L21/033 , H01L21/027 , H01L21/02 , H01L21/3105 , G03F7/11 , B05D3/10 , C09D133/10 , C08L33/10 , C09D133/12 , B05D3/06 , C09D133/08 , C08L33/12 , C09D135/02
摘要： Provided is a material composition and method for that includes providing a primer material including a surface interaction enhancement component, and a cross-linkable component. A cross-linking process is performed on the deposited primer material. The cross-linkable component self-cross-links in response to the cross-linking process to form a cross-linked primer material. The cross-lined primer material can protect an underlying layer while performing at least one process on the cross-linked primer material.

52. 发明申请

US20180335697A1 Blocking Layer Material Composition and Methods Thereof in Semiconductor Manufacturing 审中-公开
公开(公告)号：US20180335697A1
公开(公告)日：2018-11-22
申请号：US15597309
申请日：2017-05-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Siao-Shan Wang , Chen-Yu Liu , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： G03F7/09 , H01L21/027 , G03F7/42 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/095 , G03F7/38 , G03F7/20 , G03F7/32
CPC分类号： G03F7/094 , G03F7/091 , G03F7/095 , G03F7/11 , H01L21/0274
摘要： The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

53. 发明授权

US10049918B2 Directional patterning methods 有权
公开(公告)号：US10049918B2
公开(公告)日：2018-08-14
申请号：US15395310
申请日：2016-12-30
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chi-Cheng Hung , Ru-Gun Liu , Wei-Liang Lin , Ta-Ching Yu , Yung-Sung Yen , Ziwei Fang , Tsai-Sheng Gau , Chin-Hsiang Lin , Kuei-Shun Chen
IPC分类号： H01L21/311 , H01L21/768 , H01L21/033 , H01L21/3115
摘要： Directional patterning methods are disclosed herein. An exemplary method includes performing a lithography process to form a pattered hard mask layer over a wafer, wherein the patterned hard mask layer includes a hard mask feature having an associated horizontally-defined characteristic; tuning an etching process to direct etching species in a substantially horizontal direction relative to a horizontal surface of the wafer, such that the etching process horizontally removes portions of the patterned hard mask layer, thereby modifying the horizontally-defined characteristic of the hard mask feature; and forming an integrated circuit feature that corresponds with the hard mask feature having the modified horizontally-defined characteristic. Horizontally-defined characteristic can include a length, a width, a line edge roughness, a line width roughness, a line end profile, other horizontally-defined characteristics, or combinations thereof. In some implementations, the directional patterning method disclosed herein can achieve oblique interconnects and/or slot (rectangular) via interconnects.

54. 发明申请

US20180149959A1 LITHOGRAPHY MASK WITH BOTH TRANSMISSION-TYPE AND REFLECTIVE-TYPE OVERLAY MARKS AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20180149959A1
公开(公告)日：2018-05-31
申请号：US15670183
申请日：2017-08-07
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Chih-Cheng Lin , Anthony Yen , Chin-Hsiang Lin
IPC分类号： G03F1/24 , G03F1/54 , G03F1/42 , G03F1/26 , G03F1/48
CPC分类号： G03F1/24 , G03F1/26 , G03F1/42 , G03F1/48 , G03F1/50 , G03F1/54
摘要： A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over a first side of the substrate. An absorber layer is disposed over the reflective structure. The absorber layer contains one or more first overlay marks. A conductive layer is disposed over a second side of the substrate, the second side being opposite the first side. The conductive layer contains portions of one or more second overlay marks. In some embodiments, the lithography mask includes an EUV lithography mask.

55. 发明申请

US20180090370A1 Directional Patterning Methods 审中-公开
公开(公告)号：US20180090370A1
公开(公告)日：2018-03-29
申请号：US15395310
申请日：2016-12-30
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chi-Cheng Hung , Ru-Gun Liu , Wei-Liang Lin , Ta-Ching Yu , Yung-Sung Yen , Ziwei Fang , Tsai-Sheng Gau , Chin-Hsiang Lin , Kuei-Shun Chen
IPC分类号： H01L21/768 , H01L21/033 , H01L21/311 , H01L21/3115
CPC分类号： H01L21/76816 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/31155
摘要： Directional patterning methods are disclosed herein. An exemplary method includes performing a lithography process to form a pattered hard mask layer over a wafer, wherein the patterned hard mask layer includes a hard mask feature having an associated horizontally-defined characteristic; tuning an etching process to direct etching species in a substantially horizontal direction relative to a horizontal surface of the wafer, such that the etching process horizontally removes portions of the patterned hard mask layer, thereby modifying the horizontally-defined characteristic of the hard mask feature; and forming an integrated circuit feature that corresponds with the hard mask feature having the modified horizontally-defined characteristic. Horizontally-defined characteristic can include a length, a width, a line edge roughness, a line width roughness, a line end profile, other horizontally-defined characteristics, or combinations thereof. In some implementations, the directional patterning method disclosed herein can achieve oblique interconnects and/or slot (rectangular) via interconnects.

56. 发明授权

US09776216B2 Dispensing apparatus and dispensing method 有权
公开(公告)号：US09776216B2
公开(公告)日：2017-10-03
申请号：US14092533
申请日：2013-11-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Weibo Yu , Kuo-Sheng Chuang , Wen-Yu Ku , Chin-Hsiang Lin
IPC分类号： B08B3/02 , B08B17/02 , H01L21/67 , B05B15/02
CPC分类号： B08B3/02 , B05B15/555 , B08B17/025 , H01L21/67051
摘要： A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

57. 发明授权

US09684236B1 Method of patterning a film layer 有权
公开(公告)号：US09684236B1
公开(公告)日：2017-06-20
申请号：US15073073
申请日：2016-03-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ken-Hsien Hsieh , Kuan-Hsin Lo , Shih-Ming Chang , Wei-Liang Lin , Joy Cheng , Chun-Kuang Chen , Ching-Yu Chang , Kuei-Shun Chen , Ru-Gun Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G03F7/11 , G03F7/40 , G03F7/00 , H01L21/308 , H01L21/311 , H01L21/02 , H01L21/3213 , G03F7/20 , G03F7/16 , G03F7/32 , H01L21/027 , B82Y10/00 , B82Y40/00 , H01L21/3065
CPC分类号： G03F7/002 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , G03F7/20 , G03F7/2022 , G03F7/2059 , G03F7/32 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/0337 , H01L21/3065 , H01L21/3086
摘要： A method of fabricating a semiconductor device is disclosed. The method includes forming a first patterned hard mask over a material layer. The first patterned hard mask defines an opening. The method also includes forming a direct-self-assembly (DSA) layer having a first portion and a second portion within the opening, removing the first portion of the DSA layer, forming spacers along sidewalls of the second portion of the DSA layer and removing the second portion of the DSA layer. The spacers form a second patterned hard mask over the material layer.

58. 发明申请

US20150076371A1 LITHO CLUSTER AND MODULIZATION TO ENHANCE PRODUCTIVITY 有权
标题翻译： LITHO集群和模块化以提高生产力
公开(公告)号：US20150076371A1
公开(公告)日：2015-03-19
申请号：US14551302
申请日：2014-11-24
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： H01L21/67 , H01J37/20 , H01J37/16 , H01J37/32 , H01J37/317
CPC分类号： H01L21/67225 , G03F7/16 , G03F7/30 , G03F7/70991 , H01J37/16 , H01J37/20 , H01J37/3174 , H01J37/32899 , H01L21/67276 , H01L21/67745
摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要翻译：本公开涉及一种用于半导体工件加工的平版印刷工具装置。光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

59. 发明申请

US20140100684A1 2D/3D Analysis for Abnormal Tools and Stages Diagnosis 有权
标题翻译：异常工具和阶段的2D / 3D分析诊断
公开(公告)号：US20140100684A1
公开(公告)日：2014-04-10
申请号：US13647643
申请日：2012-10-09
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
发明人： Chun-Hsien Lin , Jui-Long Chen , Hui-Yun Chao , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F19/00
CPC分类号： G06F17/50 , G03F7/70533 , G03F7/70616 , G05B23/024
摘要： A method for analyzing abnormalities in a semiconductor processing system provides performing an analysis of variance on a production history associated with each of a plurality of tools at each of a plurality of process steps for each of a plurality of processed wafers, and key process steps are identified. A regression analysis on a plurality of measurements of the plurality of wafers at each process step is performed and key measurement parameters are identified. An analysis of covariance on the key measurement parameters and key process steps, and the key process steps are ranked based on an f-ratio, therein ranking an abnormality of the key process steps. Further, the plurality of tools associated with each of the key process steps are ranked based on an orthogonal t-ratio associated with an analysis of covariance, therein ranking an abnormality each tool associated with the key process steps.
摘要翻译：一种用于分析半导体处理系统中的异常的方法，提供了在多个处理晶片中的每一个的多个处理步骤中的每一个处执行与多个工具中的每一个相关联的生产历史上的方差分析，并且关键处理步骤确定。执行在每个处理步骤对多个晶片的多个测量的回归分析，并且识别关键测量参数。关键测量参数和关键过程步骤的协方差分析以及关键过程步骤基于f比进行排序，其中排列关键过程步骤的异常。此外，与关键处理步骤中的每一个相关联的多个工具基于与协方差分析相关联的正交t比进行排序，其中对与关键处理步骤相关联的每个工具进行排序。

60. 发明授权

US11971659B2 Photoresist composition and method of forming photoresist pattern 有权
公开(公告)号：US11971659B2
公开(公告)日：2024-04-30
申请号：US16584234
申请日：2019-09-26
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Chun-Chih Ho , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： G03F7/004 , G03F7/012 , G03F7/038 , G03F7/16
CPC分类号： G03F7/0387 , G03F7/0125 , G03F7/0382 , G03F7/0388 , G03F7/168
摘要： A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

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