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51. 发明授权

US08693516B2 Semiconductor surface light-emitting element and method of manufacturing thereof 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：US08693516B2
公开(公告)日：2014-04-08
申请号：US13812561
申请日：2011-06-21
申请人： Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
发明人： Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
IPC分类号： H01S5/183
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/1225 , H01L33/005 , H01L2933/0083 , H01S5/105 , H01S5/18 , H01S5/3202 , H01S5/3432 , H01S2304/04
摘要： A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
摘要翻译：本发明的半导体表面发光元件设置有通过在由锌共混结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而获得的光子晶体层6和由在空穴H中的锌共混结构的第二化合物半导体和用于向光子晶体层6供应光的有源层4，其中基层6A的主表面是（001）面，并且在该侧每个孔H的面具有至少三个不同的{100}面。

52. 发明申请

US20110151673A1 PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和用于生产光子晶体的方法
公开(公告)号：US20110151673A1
公开(公告)日：2011-06-23
申请号：US13061252
申请日：2009-08-27
申请人： Susumu Noda , Shigeki Takahashi
发明人： Susumu Noda , Shigeki Takahashi
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/00 , G02B1/12
CPC分类号： G02B1/005 , B82Y20/00 , H01J2237/3327 , H01L21/3065
摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
摘要翻译：提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是放置在该基体的表面上或上方。在其上放置电场控制的基体的表面上产生等离子体。在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

53. 发明申请

US20090285255A1 Two-Dimensional Photonic Crystal Surface Emitting Laser Light Source 有权
标题翻译：二维光子晶体表面发射激光光源
公开(公告)号：US20090285255A1
公开(公告)日：2009-11-19
申请号：US12225194
申请日：2007-03-20
申请人： Kyosuke Sakai , Eiji Miyai , Susumu Noda , Dai Ohnishi , Wataru Kunishi
发明人： Kyosuke Sakai , Eiji Miyai , Susumu Noda , Dai Ohnishi , Wataru Kunishi
IPC分类号： H01S5/183
CPC分类号： H01S5/18 , B82Y20/00 , G11B7/127 , H01S5/0425 , H01S5/105 , H01S5/125 , H01S5/2027 , H01S5/34313 , H01S2301/14 , H01S2301/18
摘要： An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector 45 or 46 is provided at least at a portion of the circumference of the two-dimensional photonic crystal. The reflector has a reflectance distribution in which the reflectance has a maximum value at a position where the amplitude envelope of the fundamental mode of an internal resonance light created within the two-dimensional photonic crystal. This design strengthens the fundamental mode while suppressing the second mode, thus enabling the laser oscillation in the fundamental mode to be selectively obtained, so that a single-wavelength laser light can be emitted.
摘要翻译：本发明的目的是提供一种能够选择性地在基模中产生激光振荡并从而发射单波长激光的表面发射激光器。在包括有源层和设置在有源层的一侧的二维光子晶体的表面发射激光器中，至少在二维光子晶体的圆周的一部分处提供反射器45或46。反射器具有反射率分布，其中反射率在二维光子晶体内产生的内部共振光的基模的幅度包络的位置处具有最大值。该设计在抑制第二模式的同时加强基本模式，从而能够选择性地获得基模中的激光振荡，从而可以发射单波长激光。

54. 发明授权

US07436873B2 Optical device and semiconductor laser oscillator 有权
标题翻译：光器件和半导体激光振荡器
公开(公告)号：US07436873B2
公开(公告)日：2008-10-14
申请号：US10897004
申请日：2004-07-23
申请人： Atsushi Sugitatsu , Susumu Noda
发明人： Atsushi Sugitatsu , Susumu Noda
IPC分类号： H01S3/08 , H01L33/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S3/10076 , H01S5/101 , H01S5/34306 , H01S5/50 , H01S5/5045
摘要： In an optical device, a slab layer includes an active layer sandwiched between cladding layers. The slab layer has a periodic refractive index profile structure in a two-dimensional plane, as a two-dimensional slab photonic crystal structure, and a linear defect region serving as a waveguide in the periodic refractive index profile structure. Regions having different widths of the waveguides, as segments of the waveguide, are connected in series.
摘要翻译：在光学装置中，平板层包括夹在包层之间的有源层。板状层在二维平面中具有周期性折射率分布结构，作为二维平板光子晶体结构，以及在周期性折射率分布结构中用作波导的线性缺陷区域。作为波导段的波导宽度不同的区域串联连接。

55. 发明申请

US20080131660A1 Three-Dimensional Photonic Crystal and its Manufacturing Method Thereof 有权
标题翻译：三维光子晶体及其制造方法
公开(公告)号：US20080131660A1
公开(公告)日：2008-06-05
申请号：US11885546
申请日：2006-03-03
申请人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
发明人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
IPC分类号： B32B3/10 , B29D11/00
CPC分类号： H01S5/10 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01S5/105 , Y10T428/24331
摘要： An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layers is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
摘要翻译：本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。延伸到两个不同方向的多个孔相对于基体表面倾斜地形成，以便形成第一晶体和第二晶体。留在孔之间的基体被制成棒。此外，连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。连接晶体层保持在第一晶体和第二晶体之间并且熔合。在由此获得的三维光子晶体中，棒变成点缺陷。点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。

56. 发明申请

US20070158662A1 Two-dimensional photonic crystal LED 审中-公开
标题翻译：二维光子晶体LED
公开(公告)号：US20070158662A1
公开(公告)日：2007-07-12
申请号：US11640837
申请日：2006-12-19
申请人： Dai Ohnishi , Susumu Noda
发明人： Dai Ohnishi , Susumu Noda
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0095 , H01L33/20 , H01L2933/0083
摘要： A two-dimensional photonic crystal LED composed of a p-type semiconductor cladding layer 12, an active layer 11 of light-emitting material, and an n-type semiconductor cladding layer 13 placed between a pair of electrodes, where air holes 16 penetrating through the layers 12, 11 and 13 and arranged periodically in the layers 12, 11 and 13 are provided. At least a part of the inner wall of the air holes 16 is oxidized 17 in either one or both of the p-type semiconductor cladding layer 12 and the n-type semiconductor cladding layer 13. The holes and electrons injected from the electrodes avoid the oxidized region 17 and enter the active layer 11 apart from the air holes 16, which minimizes the recombination (surface recombination) of the holes and electrons producing heat instead of light.
摘要翻译：由p型半导体包层12，发光材料的有源层11和放置在一对电极之间的n型半导体包层13构成的二维光子晶体LED，其中气孔16穿透设置层12,11和13并周期性地布置在层12,11和13中。空气孔16的内壁的至少一部分在p型半导体包覆层12和n型半导体包层13中的任一个或两个中被氧化17。从电极注入的空穴和电子避免了氧化区17并且进入与气孔16分开的有源层11，这使空穴和产生热而不是光的电子的复合（表面复合）最小化。

57. 发明授权

US07181120B2 Optical active device 有权
标题翻译：光学有源器件
公开(公告)号：US07181120B2
公开(公告)日：2007-02-20
申请号：US10379556
申请日：2003-03-06
申请人： Atsushi Sugitatsu , Susumu Noda
发明人： Atsushi Sugitatsu , Susumu Noda
IPC分类号： G02B6/10
CPC分类号： G02B6/1225 , B82Y20/00
摘要： In an optical device, a slab layer has an active layer sandwiched between two cladding layers. Periodic air holes are present in the slab layer. A linear defect region is present in a part of the air hole structures. As a result, laser oscillation is generated at the band end in a two-dimensional photonic crystal waveguide mode.
摘要翻译：在光学装置中，板层具有夹在两个包覆层之间的有源层。在板层中存在周期性的空气孔。在空气孔结构的一部分中存在线性缺陷区域。结果，在二维光子晶体波导模式的带端产生激光振荡。

58. 发明授权

US09130348B2 Two-dimensional photonic crystal laser 有权
标题翻译：二维光子晶体激光器
公开(公告)号：US09130348B2
公开(公告)日：2015-09-08
申请号：US13192852
申请日：2011-07-28
申请人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
发明人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/10 , H01S5/187
CPC分类号： H01S5/105 , H01S5/1231 , H01S5/18316 , H01S5/18319 , H01S5/187 , H01S5/3013 , H01S2301/17
摘要： A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0
摘要翻译：根据本发明的二维光子晶体激光器包括具有由AlαGa1-αAs（0 <α<1）或（Al＆bgr; Ga1-bgr））γIn1-γP（...）形成的基体的二维光子晶体层15 0 <=＆bgr; <1,0 <γ<1），周期性地布置有修正的折射率区域（空气孔）151，以及通过外延法在二维光子晶体层15上形成的外延生长层16。由于AlαGa1-αAs和（Al＆bgr; Ga1-bgr）γIn1-γP即使在高温下也是固体，所以在形成外延生长层16的过程中，空气孔151不会变形，作为谐振器的三维光子晶体层15可以保持在高水平。

59. 发明申请

US20140036947A1 EDGE-EMITTING SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：边缘发光半导体激光元件
公开(公告)号：US20140036947A1
公开(公告)日：2014-02-06
申请号：US14003549
申请日：2012-02-29
申请人： Akiyoshi Watanabe , Kazuyoshi Hirose , Kousuke Shibata , Takahiro Sugiyama , Yoshitaka Kurosaka , Susumu Noda
发明人： Akiyoshi Watanabe , Kazuyoshi Hirose , Kousuke Shibata , Takahiro Sugiyama , Yoshitaka Kurosaka , Susumu Noda
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01S5/105 , H01S5/22 , H01S2301/18
摘要： The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
摘要翻译：本发明的边缘发射半导体层元件包括形成在半导体层中的二维光子晶体4，并且当电极8的接触区域的一个方向被设置为长度方向（X方向）和垂直于两者的方向时沿着长度方向和基板的厚度方向设置为宽度方向（Y方向），当从垂直于基板的方向（Z轴）观察时，二维光子晶体4位于并且具有折射率周期性结构，其中折射率满足布拉格衍射条件，同时沿着一个方向（X轴）沿每个间隔周期性地变化。

60. 发明申请

US20120273911A1 PHOTOELECTRIC TRANSDUCER 审中-公开
标题翻译：光电传感器
公开(公告)号：US20120273911A1
公开(公告)日：2012-11-01
申请号：US13520126
申请日：2010-12-17
申请人： Hiroaki Shigeta , Yuhji Yashiro , Yuhsuke Tsuda , Susumu Noda , Masayuki Fujita , Yoshinori Tanaka
发明人： Hiroaki Shigeta , Yuhji Yashiro , Yuhsuke Tsuda , Susumu Noda , Masayuki Fujita , Yoshinori Tanaka
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327
摘要： A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than λ/4 nor more than λ, where λ is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2QV≦Qα≦5.4QV where Qv is (a) a Q value which indicates a magnitude of an effect of resonance caused by coupling between the photonic crystal and an external world and (b) in proportion to a reciprocal of a coefficient κV indicating a strength of the coupling between the photonic crystal and the external world, and Qa is (a) a Q value which indicates a magnitude of an effect of resonance caused by the medium of the semiconductor layer and (b) in proportion to a reciprocal of a coefficient αa of light absorption by the medium of the semiconductor layer. This allows an increase in light absorption ratio of a photoelectric transducer including a photonic crystal structure.
摘要翻译：一种光电变换器（10），包括：半导体层（13）; 和形成在所述半导体层内的光子晶体（21），所述光子晶体通过在所述半导体层内部提供纳米棒（19）形成，所述纳米棒的折射率低于所述半导体层的介质的折射率，所述纳米棒以不小于λ/ 4的间距不大于λ的间隔二维和周期地设置，其中λ是由光子晶体引起的共振峰的波长，光电传感器满足下式：0.2QV＆nlE;Qα＆nlE 其中Qv是（a）Q值，其表示由光子晶体和外部世界之间的耦合引起的谐振的影响的大小，以及（b）与系数的倒数成比例，kgr; V表示强度的光子晶体与外界之间的耦合，Qa是（a）Q值，其表示由半导体层的介质引起的共振效应的大小，（b）与由半导体层的介质的光吸收系数αa的倒数。这允许包括光子晶体结构的光电变换器的光吸收率增加。

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