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51. 发明授权

US08411407B2 Reversible flow electrohydrodynamic fluid accelerator 失效
标题翻译：可逆流动电动液加速器
公开(公告)号：US08411407B2
公开(公告)日：2013-04-02
申请号：US12615909
申请日：2009-11-10
申请人： Nels Jewell-Larsen , Kenneth A. Honer , Matt Schwiebert , Hongyu Ran , Piyush Savalia , Yan Zhang
发明人： Nels Jewell-Larsen , Kenneth A. Honer , Matt Schwiebert , Hongyu Ran , Piyush Savalia , Yan Zhang
IPC分类号： H01J27/00
CPC分类号： H02N11/006 , F04B19/006 , F28F2250/08 , G06F1/203
摘要： Reversible flow may be provided in certain EHD device configurations that selectively energize corona discharge electrodes arranged to motivate flows in generally opposing directions. In some embodiments, a first set of one or more corona discharge electrodes is positioned, relative to a first array of collector electrode surfaces, to when energized, motivate flow in a first direction, while second set of one or more corona discharge electrodes is positioned, relative to a second array of collector electrode surfaces, to when energized, motivate flow in a second direction that opposes the first. In some embodiments, the first and second arrays of collector electrode surfaces are opposing surfaces of individual collector electrodes. In some embodiments, the first and second arrays of collector electrode surfaces are opposing surfaces of respective collector electrodes.
摘要翻译：可以在某些EHD器件配置中提供可逆流动，其选择性地激励布置成在大致相反的方向上激励流动的电晕放电电极。在一些实施例中，相对于集电极表面的第一阵列，第一组一个或多个电晕放电电极被定位成当被激励时，在第一方向上激励流动，同时定位第二组一个或多个电晕放电电极相对于集电极表面的第二阵列，当被激励时，在与第一方向相反的第二方向上激励流动。在一些实施例中，集电极表面的第一和第二阵列是各个集电极的相对表面。在一些实施例中，集电极表面的第一和第二阵列是各个集电极的相对表面。

52. 发明申请

US20120199926A1 BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS 有权
标题翻译： BSI图像传感器包含可变高度硅，以便接收不同波长
公开(公告)号：US20120199926A1
公开(公告)日：2012-08-09
申请号：US13114243
申请日：2011-05-24
申请人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
IPC分类号： H01L31/0232 , H01L31/18 , H01L27/146
CPC分类号： H01L27/14625 , H01L27/1461 , H01L27/14629 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687
摘要： A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.
摘要翻译：提供了一种用于背面照明的微电子图像传感器组件及其制造方法。该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。半导体区域在第一光感测元件和后表面之间具有第一厚度，并且在第二光感测元件和后表面之间具有第二厚度，使得第一和第二光感测元件接收基本上相同强度的光。提供至少基本上填充与至少一个光感测元件相邻的半导体区域的空间的电介质区域。电介质区域可以包括至少一个光导。

53. 发明申请

US20120199925A1 BSI IMAGE SENSOR PACKAGE WITH EMBEDDED ABSORBER FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS 有权
标题翻译：具有嵌入式吸收器的BSI图像传感器包，用于接收不同波长
公开(公告)号：US20120199925A1
公开(公告)日：2012-08-09
申请号：US13111258
申请日：2011-05-19
申请人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/1461 , H01L27/14621 , H01L27/1464 , H01L27/14645
摘要： A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.
摘要翻译：提供了一种用于背面照明的微电子图像传感器组件及其制造方法。该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。半导体区域具有覆盖第一和第二光感测元件中的至少一个的开口，该半导体区域在第一光感测元件和后表面之间具有第一厚度，在第二光感测元件与后表面之间具有第二厚度。光吸收材料覆盖至少一个感光元件之内的开口内的半导体区域，使得第一和第二光感测元件接收基本上相同强度的光。

54. 发明申请

US20120146210A1 COMPLIANT INTERCONNECTS IN WAFERS 有权
标题翻译：合适的互连互连
公开(公告)号：US20120146210A1
公开(公告)日：2012-06-14
申请号：US12962806
申请日：2010-12-08
申请人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
IPC分类号： H01L25/065 , H01L21/98 , H01L21/60 , H01L27/06
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02123 , H01L2224/0215 , H01L2224/0311 , H01L2224/0332 , H01L2224/03466 , H01L2224/03602 , H01L2224/0401 , H01L2224/05009 , H01L2224/05013 , H01L2224/05014 , H01L2224/05015 , H01L2224/05022 , H01L2224/05073 , H01L2224/05186 , H01L2224/05191 , H01L2224/05548 , H01L2224/05551 , H01L2224/05552 , H01L2224/05555 , H01L2224/05564 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/05578 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/06181 , H01L2225/06513 , H01L2225/06527 , H01L2225/06544 , H01L2225/06548 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/15165 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2224/81805 , H01L2924/06
摘要： A microelectronic assembly includes a substrate and an electrically conductive element. The substrate can have a CTE less than 10 ppm/° C., a major surface having a recess not extending through the substrate, and a material having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element can include a joining portion overlying the recess and extending from an anchor portion supported by the substrate. The joining portion can be at least partially exposed at the major surface for connection to a component external to the microelectronic unit.
摘要翻译：微电子组件包括衬底和导电元件。衬底可以具有小于10ppm /℃的CTE，具有不延伸穿过衬底的凹部的主表面和设置在凹部内的弹性模量小于10GPa的材料。导电元件可以包括覆盖凹部并从由衬底支撑的锚定部分延伸的接合部分。连接部分可以在主表面处至少部分地暴露以连接到微电子单元外部的部件。

55. 发明申请

US20120139094A1 STACKED MICROELECTRONIC ASSEMBLY HAVING INTERPOSER CONNECTING ACTIVE CHIPS 有权
标题翻译：具有连接主动插座的插座的堆叠式微电子组件
公开(公告)号：US20120139094A1
公开(公告)日：2012-06-07
申请号：US12958866
申请日：2010-12-02
申请人： Belgacem Haba , Vage Oganesian , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
发明人： Belgacem Haba , Vage Oganesian , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
IPC分类号： H01L29/41 , H01L21/44
CPC分类号： H01L25/0657 , H01L21/486 , H01L21/76898 , H01L23/36 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L25/16 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/15311
摘要： A microelectronic assembly can include first and second microelectronic elements each embodying active semiconductor devices adjacent a front surface thereof, and having an electrically conductive pad exposed at the respective front surface. An interposer of material having a CTE less than 10 ppm/° C. has first and second surfaces attached to the front surfaces of the respective first and second microelectronic elements, the interposer having a second conductive element extending within an opening in the interposer. First and second conductive elements extend within openings extending from the rear surface of a respective microelectronic element of the first and second microelectronic elements towards the front surface of the respective microelectronic element. In one example, one or more of the first or second conductive elements extends through the respective first or second pad, and the conductive elements contact the exposed portions of the second conductive element to provide electrical connection therewith.
摘要翻译：微电子组件可以包括第一和第二微电子元件，每个微电子元件各自体现邻近其前表面的有源半导体器件，并且具有在相应的前表面处暴露的导电焊盘。具有小于10ppm /℃的CTE的材料的插入件具有附接到相应的第一和第二微电子元件的前表面的第一和第二表面，所述插入件具有在插入器的开口内延伸的第二导电元件。第一和第二导电元件在从第一和第二微电子元件的相应微电子元件的后表面朝向相应微电子元件的前表面延伸的开口内延伸。在一个示例中，第一或第二导电元件中的一个或多个延伸穿过相应的第一或第二焊盘，并且导电元件接触第二导电元件的暴露部分以提供与其的电连接。

56. 发明申请

US20120018894A1 NON-LITHOGRAPHIC FORMATION OF THREE-DIMENSIONAL CONDUCTIVE ELEMENTS 有权
标题翻译：非线性形成三维导电元件
公开(公告)号：US20120018894A1
公开(公告)日：2012-01-26
申请号：US12842669
申请日：2010-07-23
申请人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L21/76879 , H01L21/76802 , H01L21/76898 , H01L23/481 , H01L23/4985 , H01L23/5226 , H01L24/06 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate.
摘要翻译：提供了在基板上形成导电元件的方法和所得到的组件。该方法包括在覆盖设置在基板上的电介质区域上的牺牲层中形成凹槽。槽优选地沿着衬底的倾斜表面延伸。牺牲层优选通过非光刻方法去除，例如用激光烧蚀，机械研磨或喷砂。在沟槽中形成导电元件。可以形成凹槽。凹槽和导电元件可以沿着衬底的任何表面形成，包括在其中形成的沟槽和通孔内，并且可以连接到衬底的前表面和/或后表面上的导电焊盘。导电元件优选通过电镀形成，并且可以或可以不与基板的表面一致。

57. 发明申请

US20120018868A1 MICROELECTRONIC ELEMENTS HAVING METALLIC PADS OVERLYING VIAS 有权
标题翻译：具有金属叠层的微电子元件
公开(公告)号：US20120018868A1
公开(公告)日：2012-01-26
申请号：US12842717
申请日：2010-07-23
申请人： Vage Oganesian , Ilyas Mohammed , Craig Mitchell , Belgacem Haba , Piyush Savalia
发明人： Vage Oganesian , Ilyas Mohammed , Craig Mitchell , Belgacem Haba , Piyush Savalia
IPC分类号： H01L25/10 , H01L23/528 , H01L21/768 , H01L27/07
CPC分类号： H01L25/0657 , H01L23/3114 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L2224/0401 , H01L2224/0557 , H01L2224/05571 , H01L2224/06181 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/1329 , H01L2224/133 , H01L2224/16146 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/0002 , H01L2924/01029 , H01L2924/01322 , H01L2924/07811 , H01L2924/12041 , H01L2924/14 , H01L2924/1461 , H01L2924/00012 , H01L2224/03 , H01L2924/00 , H01L2924/014 , H01L2224/05552
摘要： A microelectronic unit, an interconnection substrate, and a method of fabricating a microelectronic unit are disclosed. A microelectronic unit can include a semiconductor element having a plurality of active semiconductor devices therein, the semiconductor element having a first opening extending from a rear surface partially through the semiconductor element towards a front surface and at least one second opening, and a dielectric region overlying a surface of the semiconductor element in the first opening. The microelectronic unit can include at least one conductive interconnect electrically connected to a respective conductive via and extending away therefrom within the aperture. In a particular embodiment, at least one conductive interconnect can extend within the first opening and at least one second opening, the conductive interconnect being electrically connected with a conductive pad having a top surface exposed at the front surface of the semiconductor element.
摘要翻译：公开了微电子单元，互连基板和制造微电子单元的方法。微电子单元可以包括其中具有多个有源半导体器件的半导体元件，该半导体元件具有从后表面部分延伸穿过半导体元件朝向前表面和至少一个第二开口的第一开口，以及覆盖第一开口中的半导体元件的表面。微电子单元可以包括电连接到相应的导电通孔并在孔内从其延伸的至少一个导电互连。在特定实施例中，至少一个导电互连可以在第一开口内和至少一个第二开口内延伸，导电互连件与具有暴露在半导体元件的前表面处的顶表面的导电焊盘电连接。

58. 发明申请

US20120018863A1 MICROELECTRONIC ELEMENTS WITH REAR CONTACTS CONNECTED WITH VIA FIRST OR VIA MIDDLE STRUCTURES 有权
标题翻译：具有通过第一个或通过中间结构连接的后接触器的微电子元件
公开(公告)号：US20120018863A1
公开(公告)日：2012-01-26
申请号：US12842651
申请日：2010-07-23
申请人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L25/0657 , H01L2224/02372 , H01L2224/02375 , H01L2224/02377 , H01L2224/0401 , H01L2224/05548 , H01L2224/06166 , H01L2224/06181 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/1329 , H01L2224/133 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/81801 , H01L2224/8182 , H01L2224/8185 , H01L2224/94 , H01L2924/014 , H01L2924/00014 , H01L2224/03 , H01L2224/81
摘要： A microelectronic unit includes a microelectronic element, e.g., an integrated circuit chip, having a semiconductor region of monocrystalline form. The semiconductor region has a front surface extending in a first direction, an active circuit element adjacent the front surface, a rear surface remote from the front surface, and a conductive via which extends towards the rear surface. The conductive via can be insulated from the semiconductor region by an inorganic dielectric layer. An opening can extend from the rear surface partially through a thickness of the semiconductor region, with the opening and the conductive via having respective widths in the first direction. The width of the opening may be greater than the width of the conductive via where the opening meets the conductive via. A rear contact can be electrically connected to the conductive via and exposed at the rear surface for electrical connection with an external circuit element, such as another like microelectronic unit, a microelectronic package, or a circuit panel.
摘要翻译：微电子单元包括具有单晶形式的半导体区域的微电子元件，例如集成电路芯片。半导体区域具有在第一方向上延伸的前表面，邻近前表面的有源电路元件，远离前表面的后表面和朝向后表面延伸的导电通孔。导电通孔可以通过无机介电层与半导体区域绝缘。开口可以从后表面部分地延伸穿过半导体区域的厚度，其中开口和导电通孔在第一方向上具有相应的宽度。开口的宽度可以大于导电通孔的宽度，其中开口与导电通孔相接。后触点可以电连接到导电通孔并在后表面暴露以与外部电路元件（例如另一个类似的微电子单元，微电子封装或电路板）电连接。

59. 发明申请

US20100155025A1 COLLECTOR ELECTRODES AND ION COLLECTING SURFACES FOR ELECTROHYDRODYNAMIC FLUID ACCELERATORS 审中-公开
标题翻译：电动液体加速器的收集电极和离子收集表面
公开(公告)号：US20100155025A1
公开(公告)日：2010-06-24
申请号：US12642561
申请日：2009-12-18
申请人： Nels Jewell-Larsen , Kenneth A. Honer , Matt Schwiebert , Hongyu Ran , Piyush Savalia , Yan Zhang
发明人： Nels Jewell-Larsen , Kenneth A. Honer , Matt Schwiebert , Hongyu Ran , Piyush Savalia , Yan Zhang
IPC分类号： F28F13/16
CPC分类号： F28F13/16 , F04B19/006 , F28F2250/08 , H01L23/467 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of electrohydrodynamic (EHD) fluid accelerator devices utilize collector electrode structures that promote efficient fluid flow and reduce the probability of arcing by managing the strength of the electric field produced at the forward edges of the collector electrodes. In one application, the EHD devices dissipate heat generated by a thermal source in a thermal management system.
摘要翻译：电动力学（EHD）流体加速器装置的实施例利用集电极结构，其通过管理在集电极的前沿产生的电场的强度来促进有效的流体流动并降低电弧的可能性。在一个应用中，EHD设备耗散热管理系统中由热源产生的热量。

60. 发明授权

US09640437B2 Methods of forming semiconductor elements using micro-abrasive particle stream 有权
公开(公告)号：US09640437B2
公开(公告)日：2017-05-02
申请号：US12842612
申请日：2010-07-23
申请人： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
发明人： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
IPC分类号： H01L23/48 , H01L21/768 , B24C1/04 , B24C3/32 , H01L23/498 , H01L23/00
CPC分类号： H01L21/76898 , B24C1/045 , B24C3/322 , H01L23/481 , H01L23/4985 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2224/03464 , H01L2224/05009 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/06181 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2224/05552 , H01L2924/00
摘要： A method of fabricating a microelectronic unit includes providing a semiconductor element having a front surface and a rear surface remote from the front surface, forming at least one first opening extending from the rear surface partially through the semiconductor element towards the front surface by directing a jet of fine abrasive particles towards the semiconductor element, and forming at least one conductive contact and at least one conductive interconnect coupled thereto. The semiconductor element can include a plurality of active semiconductor devices therein. The semiconductor element can include a plurality of conductive pads exposed at the front surface. Each conductive interconnect can extend within one or more of the first openings and can be coupled directly or indirectly to at least one of the conductive pads. Each of the conductive contacts can be exposed at the rear surface of the semiconductor element for electrical connection to an external device.

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