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51. 发明授权

US08048782B1 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08048782B1
公开(公告)日：2011-11-01
申请号：US12855631
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

52. 发明授权

US07858152B2 Chemical vapor deposition of chalcogenide materials via alternating layers 有权
标题翻译：化学气相沉积硫族化物材料经交替层
公开(公告)号：US07858152B2
公开(公告)日：2010-12-28
申请号：US12284425
申请日：2008-09-22
申请人： Stanford R. Ovshinsky , Smuruthi Kamepalli
发明人： Stanford R. Ovshinsky , Smuruthi Kamepalli
IPC分类号： C23C16/00
CPC分类号： C23C16/305 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.
摘要翻译：用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。优选的材料是含有硫族元素Te和Ge和/或Sb的材料。

53. 发明授权

US07727492B2 Apparatus for refueling on-board metal hydride hydrogen storage tank 有权
标题翻译：用于加油车载金属氢化物储氢罐的装置
公开(公告)号：US07727492B2
公开(公告)日：2010-06-01
申请号：US11453157
申请日：2006-06-14
申请人： Vitaliy Myasnikov , Stanford R. Ovshinsky
发明人： Vitaliy Myasnikov , Stanford R. Ovshinsky
IPC分类号： B01J19/00 , F28D15/00 , H01M8/18 , B65D85/00
CPC分类号： H01M8/04201 , B60L11/1892 , B60L11/1894 , F17C2270/0184 , Y02E60/321 , Y02T90/34
摘要： An onboard hydrogen storage unit for a hydrogen powered vehicle including one or more hydrogen storage vessels at least partially filled with a hydrogen storage material which stores hydrogen in metal hydride form. During operation of the hydrogen powered vehicle heat is provided to the hydrogen storage material within the one or more hydrogen storage vessels to aid in desorption of hydrogen from the hydrogen storage material. During hydrogen refueling, heat of hydride formation is removed from the hydrogen storage material within the one or more hydrogen storage vessels to aid in absorption of hydrogen into the hydrogen storage material. The heat of hydride formation is removed from the one or more hydrogen storage vessels via a heat transfer fluid circulated and/or cooled by a stream of compressed air.
摘要翻译：一种用于氢动力车辆的机载氢存储单元，其包括一个或多个至少部分地填充有以金属氢化物形式储存氢的储氢材料的储氢容器。在氢动力车辆的操作期间，将热量提供给一个或多个储氢容器内的储氢材料，以帮助氢从储氢材料中解吸。在加氢期间，氢化物形成的热量从一个或多个储氢容器内的储氢材料中除去以帮助氢吸收到储氢材料中。氢化物形成的热量通过由压缩空气流循环和/或冷却的传热流体从一个或多个储氢容器中除去。

54. 发明授权

US07632582B2 Method and apparatus for maintaining high voltage in a fuel cell 失效
标题翻译：用于维持燃料电池中的高电压的方法和装置
公开(公告)号：US07632582B2
公开(公告)日：2009-12-15
申请号：US11220930
申请日：2005-09-07
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01M8/00
CPC分类号： H01M8/04201 , H01M4/8615 , H01M4/8647 , H01M4/9041 , H01M8/04089 , H01M8/0656 , H01M8/083 , H01M8/186 , H01M16/006 , H01M2004/8684 , H01M2004/8689 , Y02E60/528
摘要： A method and apparatus for elevating the operating voltage in a fuel cell having a hydrogen electrode with hydrogen storage capacity and/or an oxygen electrode with oxygen storage capacity. The fuel cell is able to sustain the elevated voltage through application of an electrical current to the fuel cell resulting in the charging of the hydrogen electrode and/or the oxygen electrode.
摘要翻译：一种用于提高具有具有储氢能力的氢电极和/或具有储氧能力的氧电极的燃料电池中的工作电压的方法和装置。燃料电池能够通过向燃料电池施加电流来维持升高的电压，导致氢电极和/或氧电极的充电。

55. 发明申请

US20090050058A1 PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY 审中-公开
公开(公告)号：US20090050058A1
公开(公告)日：2009-02-26
申请号：US12199730
申请日：2008-08-27
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： C23C16/54
CPC分类号： C23C16/24 , C23C16/27 , C23C16/277 , C23C16/452 , C23C16/545 , H01J37/32357 , H05H1/46
摘要： A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process.

56. 发明授权

US07388825B2 Optical data storage and retrieval systems utilizing dual energy sources 失效
标题翻译：使用双能源的光数据存储和检索系统
公开(公告)号：US07388825B2
公开(公告)日：2008-06-17
申请号：US11477704
申请日：2006-06-29
申请人： Stanford R. Ovshinsky , David Strand , David Tsu
发明人： Stanford R. Ovshinsky , David Strand , David Tsu
IPC分类号： G11B7/24 , G11B7/00
CPC分类号： B82Y10/00 , G11B7/00454 , G11B7/00557 , G11B7/006 , G11B7/1275 , G11B7/1374 , G11B7/1387 , G11B7/24065 , G11B7/243 , G11B7/2433 , G11B7/251 , G11B7/252 , G11B7/2531 , G11B7/2534 , G11B7/257 , G11B7/2585 , G11B7/259 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： An optical data storage and retrieval system that includes a phase change storage medium and dual energy sources. The phase change material may store information by undergoing a transformation from one structural state to another structural state through application of energy. The system is equipped with two energy sources, neither of which alone provides sufficient energy to effect the transformation. The combination of both energy sources, however, provides sufficient energy to induce the transformation needed to record information. The energy from either source may be optical, thermal, electromagnetic, mechanical or magnetic energy.
摘要翻译：一种光学数据存储和检索系统，其包括相变存储介质和双能量源。相变材料可以通过施加能量经历从一个结构状态到另一个结构状态的转变来存储信息。该系统配备有两个能源，这两个能源都不能单独提供足够的能量来实现转型。然而，两种能源的结合提供了足够的能量来诱导记录信息所需的转化。来自任一源的能量可以是光学，热能，电磁，机械或磁能。

57. 发明申请

US20070267622A1 Multi-functional chalcogenide electronic devices having gain 有权
标题翻译：具有增益的多功能硫属化物电子器件
公开(公告)号：US20070267622A1
公开(公告)日：2007-11-22
申请号：US11446798
申请日：2006-06-05
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01L47/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/1029 , H01L29/18 , H01L29/802 , H01L31/0324 , H01L31/08 , H01L45/06 , H01L45/10 , H01L45/1206 , H01L45/1233 , H01L45/141
摘要： Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of a control signal to the control terminal permits the device to function in one or more of the following modes reversibly: (1) a gain mode in which gain is induced in the current passing between the load and reference terminals; (2) a conductivity modulation mode in which the conductivity of the chalcogenide material between the load and reference terminals is modulated; (3) a current modulation mode in which the current or current density between the load and reference terminals is modulated; and/or (4) a threshold modulation mode in which the voltage required to switch the chalcogenide material between the load and reference terminals from a resistive state to a conductive state is modulated. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括硫属化物材料的多功能电子开关和电流控制装置。这些设备包括负载端子，参考端子和控制端子。将控制信号施加到控制终端允许装置在以下模式中的一个或多个模式下可逆地运行：（1）增益模式，其中在负载和参考端之间的电流中感应出增益; （2）调制负载和参考端子之间的硫族化物材料的电导率的电导率调制模式; （3）调制负载和参考端子之间的电流或电流密度的电流调制模式; 和/或（4）阈值调制模式，其中将负载和参考端子之间的硫族化物材料从电阻状态切换到导通状态所需的电压被调制。这些设备可以用作电路和网络中的互连设备或信号提供设备。

58. 发明授权

US07186998B2 Multi-terminal device having logic functional 有权
标题翻译：具有逻辑功能的多终端设备
公开(公告)号：US07186998B2
公开(公告)日：2007-03-06
申请号：US10761022
申请日：2004-01-20
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： H01L29/04 , H01L29/06 , H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , G11C2213/53 , H01L45/06 , H01L45/1206 , H01L45/144
摘要： A multi-terminal logic device. The device includes a phase change material having crystalline and amorphous states in electrical communication with three or more electrical terminals. The phase change material is able to undergo reversible transformations between amorphous and crystalline states in response to applied electrical energy where the amorphous and crystalline states show measurably distinct electrical resistances. Electrical energy in the form of current or voltage pulses applied between a pair of terminals influences the structural state and measured electrical resistance between the terminals. In the instant devices, independent input signals are provided between different pairs of terminals and the output is measured as the resistance between yet another pair of terminals. Logic functionality is achieved through relationships between the applied input signals and the measured output resistance where the relationship is governed by the effect of the input signals on the structural state and electrical resistance of the phase change material. Logic values may be associated with the crystalline and amorphous states of the phase change material or the measured resistance between a pair of terminals.
摘要翻译：多终端逻辑器件。该装置包括具有与三个或更多个电端子电连通的晶体和无定形状态的相变材料。相变材料能够响应于所施加的电能在无定形和结晶状态之间经历可逆变换，其中非晶态和结晶态显示出可测量的不同电阻。施加在一对端子之间的电流或电压脉冲形式的电能影响端子之间的结构状态和测量的电阻。在即时设备中，在不同的终端对之间提供独立的输入信号，并且输出被测量为另一对终端之间的电阻。逻辑功能通过所施加的输入信号与测量的输出电阻之间的关系实现，其中该关系由输入信号对相变材料的结构状态和电阻的影响所决定。逻辑值可能与相变材料的晶态和非晶状态或一对端子之间测得的电阻相关。

59. 发明授权

US06967344B2 Multi-terminal chalcogenide switching devices 有权
标题翻译：多端硫属化物开关器件
公开(公告)号：US06967344B2
公开(公告)日：2005-11-22
申请号：US10384994
申请日：2003-03-10
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C2213/51 , H01L45/04 , H01L45/1206 , H01L45/1213 , H01L45/1233 , H01L45/144
摘要： Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and/or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括可在电阻状态和导电状态之间切换的硫族化物材料的多端子电子开关器件。这些设备包括第一终端，第二终端和控制终端。将控制信号施加到控制端子，调制第一和第二端子之间的硫族化物材料的导电性和/或将第一和第二端子之间的硫族化物材料从电阻状态切换到导通状态所需的阈值电压。这些设备可以用作电路和网络中的互连设备或信号提供设备。

60. 发明授权

US06830725B2 Hydrogen storage alloys having a high porosity surface layer 有权
标题翻译：具有高孔隙率表面层的储氢合金
公开(公告)号：US06830725B2
公开(公告)日：2004-12-14
申请号：US10405008
申请日：2003-04-01
申请人： Michael A. Fetcenko , Stanford R. Ovshinsky , Kwo Young , Benjamin Reichman , Taihei Ouchi , John Koch , William Mays
发明人： Michael A. Fetcenko , Stanford R. Ovshinsky , Kwo Young , Benjamin Reichman , Taihei Ouchi , John Koch , William Mays
IPC分类号： C22C3000
CPC分类号： H01M4/383 , H01M10/345 , Y02E60/324 , Y10S420/90
摘要： Electrochemical and thermal hydrogen storage alloy compositions that provide superior performance, including an electrochemical hydrogen storage alloy that provides superior low temperature discharge characteristics. The alloy compositions include microstructures in the interface region that are highly porous and that include catalytic metallic particles. The microstructures include a large volume fraction of voids having spherical or channel-like shapes and are sufficiently open structurally to facilitate greater mobility of reactive species within the microstructure and in the vicinity of catalytic metallic particles. Greater accessibility to reactive sites accordingly results. The greater mobility of reactive species and/or the greater density of catalytic particles lead to faster kinetics and improved performance (e.g. higher power), especially at low operating temperatures. The microstructures may be formed through inclusion of a microstructure tuning element in the alloy composition, through control of processing conditions and/or through inclusion of etching steps in the post-formation processing of hydrogen storage alloys.
摘要翻译：提供优异性能的电化学和热储氢合金组合物，包括提供优异的低温放电特性的电化学储氢合金。合金组合物包括界面区域中的高度多孔的微结构，并且包括催化金属颗粒。微结构包括具有球形或通道状形状的大体积分数的空隙，并且在结构上足够开放以促进反应性物质在微结构内和催化金属颗粒附近的更大迁移率。因此可以更好地获得反应性网站。活性物质的较大迁移率和/或更大密度的催化剂颗粒导致更快的动力学和改进的性能（例如更高的功率），特别是在低的操作温度下。可以通过在合金组合物中包含微结构调谐元件，通过控制加工条件和/或通过在储氢合金的后形成处理中包括蚀刻步骤来形成微观结构。

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