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51. 发明申请

US20070096180A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070096180A1
公开(公告)日：2007-05-03
申请号：US11524267
申请日：2006-09-21
申请人： Koji Yamakawa , Soichi Yamazaki , Osamu Hidaka , Osamu Arisumi
发明人： Koji Yamakawa , Soichi Yamazaki , Osamu Hidaka , Osamu Arisumi
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a semiconductor substrate, and a ferroelectric capacitor provided on the semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a first ferroelectric film provided on the lower electrode including Pb(ZrxTi1-x)O3 and having a tetragonal crystal system whose crystal direction is oriented in a direction, a second ferroelectric film provided on the first ferroelectric film including Pb(ZryTi1-y)O3 and having a tetragonal crystal system whose crystal direction is oriented in the direction, and an upper electrode provided on the second ferroelectric film.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的铁电电容器，所述铁电电容器包括下电极，设置在下电极上的第一铁电体膜包括Pb（Zr x Ti）具有晶体方向取向为<111>方向的四方晶系的第一铁电体膜，设置在包含Pb（Zr）的第一铁电体膜上的第二铁电体膜具有晶体方向取向为<111>方向的四方晶系，并且具有上部设置在第二铁电体膜上的电极。

52. 发明申请

US20050128663A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050128663A1
公开(公告)日：2005-06-16
申请号：US10750814
申请日：2004-01-05
申请人： Soichi Yamazaki , Hiroyuki Kanaya , Kazuhiro Tomioka , Koji Yamakawa
发明人： Soichi Yamazaki , Hiroyuki Kanaya , Kazuhiro Tomioka , Koji Yamakawa
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/115 , H02H9/00
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： There is disclosed a semiconductor device comprising a capacitor comprising a lower electrode provided above a substrate, a capacitor insulating film selectively provided on the lower electrode, and an upper electrode selectively provided above the lower electrode so that the capacitor insulating film can be interposed between the upper and lower electrodes, an electrode protection film formed of oxide conductors containing at least one of metal elements such as Sr, Ti, Ru, Ir and Pt, and provided on the upper electrode, an interlayer insulating film provided on the electrode protection film, an upper layer interconnect wire for the lower electrode provided on the interlayer insulating film, and electrically connected to the lower electrode, and an upper layer interconnect wire for the upper electrode provided on the interlayer insulating film, and electrically connected to the upper electrode.
摘要翻译：公开了一种半导体器件，其包括电容器，该电容器包括设置在基板上的下电极，选择性地设置在下电极上的电容器绝缘膜，以及选择性地设置在下电极上方的上电极，使得电容器绝缘膜可以介于上下电极，由包含Sr，Ti，Ru，Ir和Pt等金属元素中的至少一种的氧化物导体形成的电极保护膜，设置在上部电极上，设置在电极保护膜上的层间绝缘膜，用于下层电极的上层互连线设置在层间绝缘膜上并电连接到下电极，以及上层电介质线，用于上电极，设置在层间绝缘膜上，并电连接到上电极。

53. 发明申请

US20080258192A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080258192A1
公开(公告)日：2008-10-23
申请号：US12104138
申请日：2008-04-16
申请人： Soichi YAMAZAKI , Koji Yamakawa
发明人： Soichi YAMAZAKI , Koji Yamakawa
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L21/02197 , H01G4/085 , H01G4/33 , H01L21/02271 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： This disclosure concerns a semiconductor device comprising an insulating film provided on a semiconductor substrate; a lower contact formed in the insulating film; a ferroelectric capacitor including a first lower electrode provided on the lower contact and connected to the lower contact, a second lower electrode provided on the first lower electrode and made of SRO (Strontium Ruthenium Oxide), a ferroelectric film including crystals, and an upper electrode provided on the ferroelectric film, grain diameters of the crystals being set to 30 nm to 150 nm by forming the ferroelectric film on the second lower electrode; and a wiring connected to the upper electrode.
摘要翻译：本公开涉及包括设置在半导体衬底上的绝缘膜的半导体器件; 在绝缘膜中形成的下接触部; 铁电电容器，包括设置在下触点上并连接到下触点的第一下电极，设置在第一下电极上并由SRO（氧化锶钌）制成的第二下电极，包含晶体的铁电体膜和上电极设置在铁电体膜上，通过在第二下部电极上形成铁电体膜，将晶体的晶粒直径设定为30nm〜150nm; 以及连接到上电极的布线。

54. 发明申请

US20060234442A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060234442A1
公开(公告)日：2006-10-19
申请号：US11404000
申请日：2006-04-14
申请人： Soichi Yamazaki , Koji Yamakawa
发明人： Soichi Yamazaki , Koji Yamakawa
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/57 , H01L28/65 , H01L28/75
摘要： According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOx type conductive oxide (M is a metal element, O is an oxygen element, and x>0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，其包括通过将电介质膜夹在下电极和上电极之间而形成在半导体衬底之上的电容器，该电容器包括电极膜，该电极膜包含MO < >型导电氧化物（M是金属元素，O是氧元素，x> 0），以及与上部电极连接的接触，其中接触部正下方的电极膜的膜厚小于膜厚度的另一部分中的电极膜。

55. 发明申请

US20070126338A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20070126338A1
公开(公告)日：2007-06-07
申请号：US11671302
申请日：2007-02-05
申请人： Kaoru KOIWA , Koji Yamakawa
发明人： Kaoru KOIWA , Koji Yamakawa
IPC分类号： H01J63/04 , H01J1/00
CPC分类号： H01J31/127 , H01J1/316 , H01J2201/306
摘要： A PED is constituted by arranging signal lines and scanning lines, in the form of a matrix, on the inner surface of a rear substrate and by forming PZT films, which are used as electron-emitting members, at the intersections of the signal lines and the scanning lines. When a voltage is applied between element electrodes connected to the lines, each PZT film emits an electron beam having a cross-section shape that depends on the shape of the PZT film.
摘要翻译： PED是通过将矩阵形式的信号线和扫描线布置在后基板的内表面上，并且在信号线与信号线的交点处形成用作电子发射部件的PZT膜构成的，扫描线。当在连接到线路的元件电极之间施加电压时，每个PZT膜发射具有取决于PZT膜的形状的横截面形状的电子束。

56. 发明授权

US07151288B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07151288B2
公开(公告)日：2006-12-19
申请号：US10678061
申请日：2003-10-06
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L29/51
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal compound film provided on the silicon carbide film and containing a metal carbide, and an electrode provided on the metal compound film.
摘要翻译：半导体器件包括半导体衬底，与半导体衬底电连接的导电插塞，设置在导电插塞上的碳化硅膜，设置在碳化硅膜上并含有金属碳化物的金属化合物膜，以及设置在该半导体衬底上的电极金属化合物膜。

57. 发明授权

US06982444B2 Ferroelectric memory device having a hydrogen barrier film 失效
标题翻译：具有氢阻挡膜的铁电存储器件
公开(公告)号：US06982444B2
公开(公告)日：2006-01-03
申请号：US10443107
申请日：2003-05-22
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

58. 发明授权

US06924521B2 Semiconductor device comprising a capacitor using a ferroelectric material 失效
标题翻译：包括使用铁电材料的电容器的半导体器件
公开(公告)号：US06924521B2
公开(公告)日：2005-08-02
申请号：US10760499
申请日：2004-01-21
申请人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L21/02 , H01L31/119 , H01L29/00
CPC分类号： H01L28/56 , H01L28/55
摘要： A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.
摘要翻译：半导体器件包括底电极，顶电极和设置在底电极和顶电极之间并由包含Pb，Zr，Ti和O的钙钛矿型铁电体制成的电介质膜，该电介质膜包括由第一部分形成的第一部分由具有多个方向的晶界划分的多个晶粒。

59. 发明授权

US06586793B2 Ferroelectric memory and manufacturing method thereof 有权
标题翻译：铁电存储器
公开(公告)号：US06586793B2
公开(公告)日：2003-07-01
申请号：US09984518
申请日：2001-10-30
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/91
摘要： A ferroelectric memory includes first and second plugs respectively connected to one and the other of source/drain regions of the transistor formed on a semiconductor wafer. A first capacitor electrode is connected to the first plug and located at a position above the transistor. The first capacitor electrode includes first and second capacitor faces on the second plug side and a side reverse thereto, respectively. A ferroelectric film is disposed on the first capacitor face. A second capacitor electrode is connected to the second plug and located at a position above the transistor. The second capacitor electrode is disposed on the first capacitor face through the ferroelectric film.
摘要翻译：铁电存储器包括分别连接到形成在半导体晶片上的晶体管的源极/漏极区域中的一个和另一个的第一和第二插头。第一电容器电极连接到第一插头并且位于晶体管上方的位置处。第一电容器电极包括分别在第二插头侧的第一和第二电容器面和与其相反的一侧。铁电体膜设置在第一电容器面上。第二电容器电极连接到第二插头并且位于晶体管上方的位置。第二电容器电极通过铁电体膜设置在第一电容器面上。

60. 发明授权

US06377358B1 Method for correcting a recording head, correction apparatus therefor, recording head corrected by use of such apparatus, and recording apparatus using such recording head 失效
标题翻译：用于校正记录头的方法，其校正装置，使用这种装置校正的记录头以及使用这种记录头的记录装置
公开(公告)号：US06377358B1
公开(公告)日：2002-04-23
申请号：US09219896
申请日：1998-12-24
申请人： Kimiyuki Hayasaki , Koji Yamakawa , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Okawa , Satoshi Kudo
发明人： Kimiyuki Hayasaki , Koji Yamakawa , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Okawa , Satoshi Kudo
IPC分类号： B41B1500
CPC分类号： B41J2/04508 , B41J2/04536 , B41J2/04563 , B41J2/04565 , B41J2/0458 , B41J2/04588 , B41J2/04591 , B41J2/04598 , B41J29/393 , B41J2202/21
摘要： A method for correcting a recording head is provided to solve the problems of density unevenness in recorded images. The density comparison is made with the reference density for a predetermined unit in the density distribution of an image recorded by the application of n kinds of signals. Then, one of the n kinds of signals which is close to the reference density is selected. The properties of the signal thus selected are transmitted to the recording head together with the correction data, hence correcting density unevenness.
摘要翻译：提供了一种用于校正记录头的方法，以解决记录图像中的浓度不均匀性的问题。通过应用n种信号记录的图像的浓度分布中的预定单位的参考密度进行密度比较。然后，选择接近参考密度的n种信号之一。所选择的信号的属性与校正数据一起发送到记录头，从而校正浓度不均匀性。

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