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51. 发明授权

US4717586A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4717586A
公开(公告)日：1988-01-05
申请号：US829072
申请日：1986-02-13
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/08 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/09 , H01L31/20 , H01L21/469
CPC分类号： H01L31/095 , C23C16/30 , C23C16/452 , H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A process for forming a deposited film comprises introducing into a film forming space for forming a deposited film on a substrate an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said activated species (A) separately from each other, and then permitting the both species to react chemically with each other thereby to form a deposited film on the above substrate.
摘要翻译：用于形成沉积膜的方法包括在基板上引入用于在基板上形成沉积膜的成膜空间，通过分解含有硅和卤素的化合物和由锗形成的活化物质（B）形成的活化物质（A）含有与所述活性物质（A）相互反应的成膜化合物，然后使两种物质彼此化学反应，从而在上述基材上形成沉积膜。

52. 发明授权

US5246886A Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus 失效
标题翻译：通过生长Ge晶体核在基底上沉积含硅多晶膜的方法
公开(公告)号：US5246886A
公开(公告)日：1993-09-21
申请号：US903939
申请日：1992-06-26
申请人： Akira Sakai , Shunichi Ishihara , Isamu Shimizu
发明人： Akira Sakai , Shunichi Ishihara , Isamu Shimizu
IPC分类号： H01L21/20 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/786 , H01L31/18
CPC分类号： H01L31/1812 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02658 , H01L21/3065 , Y02E10/50
摘要： A process for forming a silicon-containing polycrystalline film on a substrate by a chemical vapor deposition method, said process comprises the steps of:(a) forming a thin film comprising silicon and germanium atoms on said substrate,(b) subjecting said thin film to etching treatment so that a crystalline nucleus comprising germanium atoms as the main constituent remains on the surface of said substrate, and(c) growing said crystalline nucleus to thereby form a silicon-containing polycrystalline film on said substrate.
摘要翻译：一种通过化学气相沉积法在衬底上形成含硅多晶膜的方法，所述方法包括以下步骤：（a）在所述衬底上形成包含硅和锗原子的薄膜，（b）使所述薄膜以使得以锗原子为主要成分的晶核保留在所述基板的表面上，（c）生长所述晶核，从而在所述基板上形成含硅多晶膜。

53. 发明授权

US4849249A Deposited film forming process and deposited film forming device 失效
标题翻译：沉积成膜工艺和沉积膜形成装置
公开(公告)号：US4849249A
公开(公告)日：1989-07-18
申请号：US186770
申请日：1988-04-25
申请人： Shunichi Ishihara , Yoshiyuki Osada , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Yoshiyuki Osada , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , H01L21/205
CPC分类号： C23C16/452 , C23C16/22
摘要： A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
摘要翻译：根据化学气相沉积在基板上形成沉积膜的方法包括通过使含有成为构成所述沉积膜的成分的原子（A）的激发物质（AY）与原子（AY）反应形成非晶膜的第一步骤 Y）与具有与所述激发的物质（AY）以第一比例化学反应的活性物质（Z）具有高电负性，第二步通过使所述激发的物质（AY）与所述活性物质（Z）反应形成多晶膜）以与所述第一比率不同的第二比率。

54. 发明授权

US4803093A Process for preparing a functional deposited film 失效
标题翻译：制备功能沉积膜的方法
公开(公告)号：US4803093A
公开(公告)日：1989-02-07
申请号：US843236
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/24 , C08J5/18 , C23C16/00 , C23C16/44 , C23C16/455 , H01L21/205 , H01L31/04 , B05D3/06
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Process for preparing a functional film deposited on a substrate having practically applicable characteristics which is usable as a photoconductive member in semiconductor device, image input line sensor, image pickup device on the like by generating an active species by subjecting a gaseous substance capable of being activated to generate said active species to the action of activating energy in an active species generating and transporting space leading to a film forming space containing the substrate;simultaneously generating a precursor by subjecting a gaseous substance capable of generating said precursor to the action of activating energy in a precursor generating and transporting space located separately from and within the active species generating and transporting space and open in a downstream region of that space; andintroducing the resulting active species and precursor into the film forming space to chemically react to form the functional deposited film on the substrate in the absence of plasma.
摘要翻译：用于制备沉积在基板上的功能膜的方法，其具有可用作半导体器件中的感光体的实际应用特性，图像输入线传感器，图像拾取装置等，通过使能够活化的气态物质产生活性物质以产生所述活性物质以产生和传输空间的活化能的作用，所述活性物质通向含有所述基底的成膜空间; 通过使能够产生所述前体的气态物质在产生和传输空间的活化物质生成和传输空间内的前体产生和传输空间中活化能量的作用同时产生前体，并在该空间的下游区域中开放; 并将所得活性物质和前体引入成膜空间中以在不存在等离子体的情况下在基板上形成功能性沉积膜。

55. 发明授权

US4784874A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4784874A
公开(公告)日：1988-11-15
申请号：US831448
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： H01L21/205 , B05D3/06
CPC分类号： H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的膜形成空间引入其中包含由含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）与所述活性物质（A）彼此分离地化学相互反应，然后向其提供热能，从而允许物质彼此化学反应以在基底上形成沉积膜。

56. 发明授权

US4778692A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4778692A
公开(公告)日：1988-10-18
申请号：US831460
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： H01L21/205 , B05D3/06
CPC分类号： H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.
摘要翻译：一种用于形成沉积膜的方法，其包括在基底上引入用于在基底上形成沉积膜的成膜空间中通过分解含有硅和卤素的化合物和形成的活性物质（B）而形成的活性物质（A）从用于成膜的含锗化合物与所述活性物质（A）彼此分开地化学相互反应，然后允许上述各种活性物质和所述含锗化合物通过光照射激发而彼此化学反应从而在上述基板上形成沉积膜。

57. 发明授权

US4702934A Electrophotographic photosensitive member, process and apparatus for the preparation thereof 失效
标题翻译：电子照相感光构件，其制备方法和装置
公开(公告)号：US4702934A
公开(公告)日：1987-10-27
申请号：US843277
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： G03B27/62 , G03G15/00 , G03G15/01 , G03G15/04 , G03G15/043 , G03G15/36 , G03G21/00 , B05D3/06
CPC分类号： G03G5/0433 , G03G5/04 , G03G2215/00957
摘要： A process and an apparatus for preparing an electrophotographic photosensitive member with the use of an active species and a precursor in the absence of a plasma.
摘要翻译：一种在没有等离子体的情况下使用活性物质和前体制备电子照相感光构件的方法和装置。

58. 发明授权

US4839240A Multilayer photoconductive material 失效
标题翻译：多层感光材料
公开(公告)号：US4839240A
公开(公告)日：1989-06-13
申请号：US135517
申请日：1987-12-18
申请人： Isamu Shimizu , Minori Yamaguchi
发明人： Isamu Shimizu , Minori Yamaguchi
IPC分类号： G03G5/08 , H01L31/0248 , H01L31/0376 , H01L31/0392 , H01L31/09 , H01L31/20
CPC分类号： H01L31/095 , H01L31/03765 , H01L31/03921 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10T428/12632
摘要： A multilayer photoconductive material wherein at least two kinds of alloys selected from the group consisting of amorphous silicon or germanium alloys comprising silicon and/or germanium and at least one element selected from the group consisting of carbon, fluorine and hydrogen are alternately laminated, the kinds of alloys of the adjacent layers being different from each other and the total number of the layers being at least 6, which has exhibits a high response speed and can be easily controlled in sensitivity not only to long wavelength light but also to short wavelength light.
摘要翻译：一种多层感光材料，其中选自包含硅和/或锗的非晶硅或锗合金的至少两种合金和选自碳，氟和氢的至少一种元素交替层压，的相邻层的合金彼此不同，并且层的总数至少为6，其具有高响应速度，并且可以容易地不仅对长波长的光而且对于短波长的光敏感地控制。

59. 发明授权

US4766091A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4766091A
公开(公告)日：1988-08-23
申请号：US946085
申请日：1986-12-24
申请人： Hirokazu Ohtoshi , Junichi Hanna , Isamu Shimizu
发明人： Hirokazu Ohtoshi , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/02 , C23C16/24 , C23C16/30 , C23C16/44 , C23C16/48 , G03G5/08 , G03G5/082 , H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/075 , H01L31/09 , H01L31/20 , H01L21/20
CPC分类号： H01L21/02425 , C23C16/02 , C23C16/482 , C23C16/483 , G03G5/08235 , H01L21/02422 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/095 , H01L31/202 , Y02E10/548 , Y02P70/521 , Y10S438/909
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，所述多层结构包括形成在衬底上的一个或多个受控带隙半导体薄层，包括根据所述光CVD法形成所述受控带隙半导体薄层中的至少一个，并至少形成根据包括引入用于成膜的气态起始材料和具有将所述原料氧化成反应空间的特性的气态卤素氧化剂的方法之一，以在其间进行化学接触从而形成多种前体，包括在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

60. 发明授权

US4721664A Silicon film deposition from mixture of silanes 失效
标题翻译：从硅烷混合物中沉积硅膜
公开(公告)号：US4721664A
公开(公告)日：1988-01-26
申请号：US867624
申请日：1986-05-27
申请人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
发明人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
IPC分类号： C23C16/24 , G03G5/082 , H01L31/0392 , H01L31/20 , G03G5/085
CPC分类号： H01L31/202 , C23C16/24 , G03G5/08278 , H01L31/03921 , Y02E10/50 , Y02P70/521
摘要： A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.
摘要翻译：一种制造感光体的方法包括在用于形成光电导层的基板上形成光电导层，通过将在气态下形成光电导层的起始物质引入保持在所需减压下的沉积室中，并在气体下激发放电所述起始物质的气氛，其特征在于所述起始物质由选自下列化合物的至少两种化合物构成：下式化合物：其中n为正整数的SinH2n + 2（A）化合物和下式化合物： SimH1Xk（B）其中m和k为正整数，l为0或正整数，l + k = 2m + 2，X为卤原子，n和m在下文称为“次数”，所述起始物质被引入所述沉积室的量被控制为使得高级化合物的总量的比例为至少1体积％。基于最小订单化合物的总量的％，最小订单化合物是其序列号是所述至少两种化合物的订单号中最小值的化合物，高级化合物是其订货号高于最小订单复合。

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