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51. 发明授权

US5961720A Single crystal-growing apparatus 失效
标题翻译：单晶生长装置
公开(公告)号：US5961720A
公开(公告)日：1999-10-05
申请号：US909138
申请日：1997-08-11
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

52. 发明授权

US5737117A Second harmonic generation element and a process for producing the same 失效
标题翻译：二次谐波发生元件及其制造方法
公开(公告)号：US5737117A
公开(公告)日：1998-04-07
申请号：US628252
申请日：1996-04-05
申请人： Minoru Imaeda , Katsuhiro Imai , Tatsuo Kawaguchi , Takashi Yoshino , Akihiko Honda
发明人： Minoru Imaeda , Katsuhiro Imai , Tatsuo Kawaguchi , Takashi Yoshino , Akihiko Honda
IPC分类号： G02F1/35 , C30B15/00 , C30B15/08 , G02B6/13 , G02F1/355 , G02F1/37 , G02F1/377
CPC分类号： G02F1/377 , C30B15/00 , C30B15/08 , C30B29/30 , G02B6/131
摘要： A second harmonic generation element including a single crystal substrate having a fundamental composition of K.sub.3 Li.sub.2-2x (Nb.sub.1-y Ta.sub.y).sub.5+5z O.sub.15-x+12.5z and an optical waveguide made of an epitaxial film with a fundamental composition of K.sub.3 Li.sub.2-2a (Nb.sub.1-b Ta.sub.b).sub.5+5c O.sub.15-a+12.5c and refractive index different from that of the single crystal substrate, wherein: -0.5.ltoreq.a, x.ltoreq.0.625 0.ltoreq.b, y.ltoreq.0.5 0.8.ltoreq.(5-2x)/(5+5z), (5-2a)/(5+5c).ltoreq.1.2.
摘要翻译：包括具有K3Li2-2x（Nb1-yTay）5 + 5z015-x + 12.5z的基本组成的单晶衬底的二次谐波发生元件和由基本组成为K3Li2-2a（Nb1）的外延膜制成的光波导 -bTab）5 + 5cO15-a + 12.5c和与单晶衬底的折射率不同的折射率，其中：-0.5≤a，x <0.6250

53. 发明授权

US07988784B2 Method for manufacturing III metal nitride single crystal 有权
标题翻译： III型金属氮化物单晶的制造方法
公开(公告)号：US07988784B2
公开(公告)日：2011-08-02
申请号：US12804521
申请日：2010-07-23
申请人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
发明人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
IPC分类号： C30B19/12
CPC分类号： C30B29/403 , C30B19/12
摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2. The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.
摘要翻译：使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。下面的薄膜2在平面图中具有凸形的形状。没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与单晶属于第III组的金属的氮化物，形成在另一底层膜上。

54. 发明申请

US20100307404A1 Method for manufacturing III metal nitride single crystal 有权
标题翻译： III型金属氮化物单晶的制造方法
公开(公告)号：US20100307404A1
公开(公告)日：2010-12-09
申请号：US12804521
申请日：2010-07-23
申请人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
发明人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
IPC分类号： C30B19/12
CPC分类号： C30B29/403 , C30B19/12
摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2 The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.
摘要翻译：使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。下面的薄膜2在平面图中具有凸形的形状。没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与氮化物的单晶接触属于第III组的金属，形成于另一底层薄膜上。

55. 发明申请

US20080302297A1 Method of recovering sodium metal from flux 有权
标题翻译：从助熔剂中回收钠金属的方法
公开(公告)号：US20080302297A1
公开(公告)日：2008-12-11
申请号：US12221642
申请日：2008-08-05
申请人： Mikiya Ichimura , Katsuhiro Imai
发明人： Mikiya Ichimura , Katsuhiro Imai
IPC分类号： C30B9/00 , C22B26/10
CPC分类号： C30B9/10 , C22B3/22 , C22B7/003 , C22B7/004 , C22B26/10 , C30B29/403 , C30B29/406 , Y02P10/234
摘要： It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature equal to or higher than the melting point of sodium metal to separate and recover the sodium metal 22 from the flux 23. The medium is a hydrocarbon, for example.
摘要翻译：提供了一种在短时间内和以可重复使用的形式从含金属钠的助熔剂中轻轻且安全地回收钠金属的方法。助熔剂23在介质19中以等于或高于金属钠熔点的温度与金属钠22反应而加热，以分离和回收来自助熔剂23的金属钠。介质是例如烃。

56. 发明申请

US20060215088A1 Liquid crystal device and electronic apparatus 有权
公开(公告)号：US20060215088A1
公开(公告)日：2006-09-28
申请号：US11354194
申请日：2006-02-15
申请人： Kimitaka Kamijo , Hideki Kaneko , Katsuhiro Imai , Tomoyuki Nakano
发明人： Kimitaka Kamijo , Hideki Kaneko , Katsuhiro Imai , Tomoyuki Nakano
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/136227
摘要： A liquid crystal device includes a pair of substrates that face each other, a liquid crystal layer that is interposed between the pair of substrates, electrodes that are formed on opposing surfaces of the pair of substrates so as form a plurality of subpixel regions, in each of which a reflective display region having a light-reflective film reflecting light and a transmissive display region transmitting light are provided, and an insulating layer that is formed between one of the pair of substrates and the liquid crystal layer such that a thickness of the liquid crystal layer in the reflective display region is smaller than a thickness of the liquid crystal layer in the transmissive display region. The insulating layer is formed to have a first film thickness in the reflective display region, and is provided between the transmissive display region of a predetermined subpixel region and the transmissive display region of a subpixel region adjacent to the predetermined subpixel region. A portion of the insulating layer is formed to have a film thickness smaller than the first film thickness between the transmissive display region of the predetermined subpixel region and the transmissive display region of the subpixel region adjacent to the predetermined subpixel region.

57. 发明授权

US06451110B2 Process for producing a planar body of an oxide single crystal 失效
标题翻译：用于制造氧化物单晶的平面体的方法
公开(公告)号：US06451110B2
公开(公告)日：2002-09-17
申请号：US09799309
申请日：2001-03-05
申请人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
发明人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
IPC分类号： C30B710
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30
摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A planar seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A planar body 14 is produced following the seed crystal 15. In this case, differences in lattice constants between each crystal axis of the seed crystal 15 and each corresponding crystal axis of the planar body 14 is controlled at 0.1% or less, respectively.
摘要翻译：当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。氧化物单晶的原料在坩埚7中熔融。平面晶种15与熔体18接触，然后通过降低晶种从熔炉18的开口13c向下拉。在籽晶15之后制造平面体14.在这种情况下，晶种15的每个晶轴与平面体14的每个相应的晶轴之间的晶格常数的差分别控制在0.1％以下。

58. 发明授权

US06447603B2 Process and apparatus for producing oxide single crystals 失效
标题翻译：用于生产氧化物单晶的方法和装置
公开(公告)号：US06447603B2
公开(公告)日：2002-09-10
申请号：US09793193
申请日：2001-02-26
申请人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
发明人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
IPC分类号： C30B1302
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.
摘要翻译：公开了一种用于生产氧化物单晶的方法，包括以下步骤：在坩埚内熔化氧化物单晶的原料，使晶种与所得熔体接触，通过拉下氧化物单晶来生长氧化物单晶在给定的下拉轴中熔化通过坩埚的开口，并固定地保持晶种，然后将用于将单晶生长选择的晶种的给定晶体取向的角度减小到下拉轴。

59. 发明授权

US06402835B2 Process for producing a raw material powder to grow a single crystal and the single crystal 失效
标题翻译：用于生产原料粉末以生长单晶和单晶的方法
公开(公告)号：US06402835B2
公开(公告)日：2002-06-11
申请号：US09780824
申请日：2001-02-09
申请人： Masahiro Murasato , Akihiko Honda , Katsuhiro Imai , Minoru Imaeda
发明人： Masahiro Murasato , Akihiko Honda , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B1500
CPC分类号： C30B15/00 , C30B29/30
摘要： In a process for producing a raw material powder including lithium potassium niobate for growing a single crystal of lithium potassium niobate, raw starting materials comprising lithium carbonate powder, potassium carbonate powder and niobium pentoxide powder are mixed in a solvent. The lithium carbonate powder and potassium carbonate powder are entirely dissolved into the solvent, and lithium carbonate and potassium carbonate are then deposited around the niobium pentoxide powder by spray-drying the mixture to obtain granulated powder, and then the granulated powder is thermally treated to produce the raw material powder.
摘要翻译：在生产含有铌酸锂钾的单晶的铌酸锂钾的原料粉末的制造方法中，将包含碳酸锂粉末，碳酸钾粉末和五氧化二铌粉末的原料原料混合在溶剂中。将碳酸锂粉末和碳酸钾粉末完全溶解在溶剂中，然后通过喷雾干燥该混合物将碳酸锂和碳酸钾沉积在五氧化二铌粉末上，得到造粒粉末，然后将造粒粉末进行热处理原料粉。

60. 发明授权

US5716748A Developer and finely particulate polymer 失效
标题翻译：显影剂和细颗粒聚合物
公开(公告)号：US5716748A
公开(公告)日：1998-02-10
申请号：US686677
申请日：1996-07-26
申请人： Jun Hasegawa , Katsuhiro Imai , Nobuyasu Ota , Kazunori Shigemori
发明人： Jun Hasegawa , Katsuhiro Imai , Nobuyasu Ota , Kazunori Shigemori
IPC分类号： G03G9/08 , G03G9/087 , G03G9/097
CPC分类号： G03G9/08708 , G03G9/0825 , G03G9/08728 , G03G9/097
摘要： The invention provides a developer comprising toner particles and a finely particulate polymer, wherein the finely particulate polymer is a finely particulate polymer of core-shell structure, which has a core part formed of a vinyl aromatic hydrocarbon polymer and a shell part formed of a (meth)acrylic ester polymer, and is obtained by a soap-free emulsion polymerization process. The developer has stable flowability and charging properties. The invention also provides such a finely particulate polymer and a preparation process thereof.
摘要翻译：本发明提供一种包含调色剂颗粒和细颗粒聚合物的显影剂，其中细颗粒聚合物是核 - 壳结构的细颗粒聚合物，其具有由乙烯基芳族烃聚合物形成的芯部分和由（甲基）丙烯酸酯聚合物，并且通过无皂乳液聚合方法获得。开发者具有稳定的流动性和充电性能。本发明还提供了这种细颗粒聚合物及其制备方法。

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