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51. 发明授权

US07037738B2 Method of manufacturing a semiconductor light-emitting element 失效
标题翻译：制造半导体发光元件的方法
公开(公告)号：US07037738B2
公开(公告)日：2006-05-02
申请号：US10346108
申请日：2003-01-17
申请人： Hitoshi Sugiyama , Kenichi Ohashi , Atsuko Yamashita , Shoichi Washizuka , Yasuhiko Akaike , Shunji Yoshitake , Koji Asakawa , Katsumi Egashira , Akira Fujimoto
发明人： Hitoshi Sugiyama , Kenichi Ohashi , Atsuko Yamashita , Shoichi Washizuka , Yasuhiko Akaike , Shunji Yoshitake , Koji Asakawa , Katsumi Egashira , Akira Fujimoto
IPC分类号： H01L21/00
CPC分类号： H01L33/22
摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.
摘要翻译：公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层。发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上，突出部的基部的宽度在10〜500nm的范围内。

52. 发明授权

US08993869B2 Photoelectric conversion element 有权
标题翻译：光电转换元件
公开(公告)号：US08993869B2
公开(公告)日：2015-03-31
申请号：US13422728
申请日：2012-03-16
申请人： Akira Fujimoto , Tsutomu Nakanishi , Kenji Nakamura , Kumi Masunaga , Koji Asakawa
发明人： Akira Fujimoto , Tsutomu Nakanishi , Kenji Nakamura , Kumi Masunaga , Koji Asakawa
IPC分类号： H01L31/0232 , H01L31/0224 , H01L31/0216 , H01L31/0288
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/0288 , Y02E10/50
摘要： A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
摘要翻译：光电转换元件包括光电转换层，其包括第一金属层，半导体层和第二金属层，所有这些都被层压。此外，第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。光电转换层包括含有杂质的长波长吸收层，该杂质与p型掺杂和半导体层的n型掺杂不同。长波长吸收层距离纳米网状金属或点状金属为5nm以下。

53. 发明授权

US08395305B2 Display device and method of manufacturing transparent substrate for display device 有权
公开(公告)号：US08395305B2
公开(公告)日：2013-03-12
申请号：US12410298
申请日：2009-03-24
申请人： Akira Fujimoto , Koji Asakawa
发明人： Akira Fujimoto , Koji Asakawa
IPC分类号： H01L51/00 , H01L51/50 , H01L51/52
CPC分类号： H01J11/10 , G02F1/133502 , G02F1/133512 , G02F2001/133562 , G02F2001/133565 , H01J9/205 , H01L51/52 , H01L51/5262
摘要： A display device comprises a substrate and a laminate structure formed on the substrate and comprising a plurality of layers including a display region. The laminate structure has a recessed/projected portions at least one of an outermost surface of display side and an interface between the layers. The projected portions of the recessed/projected portions have a mean circle-equivalent diameter ranging from 50 nm to 250 nm with the standard deviation of circle-equivalent diameter of the projected portions being within the range of 10 to 50% of the mean circle-equivalent diameter, and a mean height ranging from 100 nm to 500 nm with the standard deviation of height being within the range of 10 to 50% of the mean height. The projected portions have a circularity coefficient ranging from 0.6 to 1, and an area ratio ranging from 20 to 75%.

54. 发明申请

US20130057138A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 审中-公开
标题翻译：具有高分子结构的发光金属电极及其制备方法
公开(公告)号：US20130057138A1
公开(公告)日：2013-03-07
申请号：US13669793
申请日：2012-11-06
申请人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
发明人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
IPC分类号： H01J1/54
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

55. 发明授权

US08355204B2 Light-extraction layer of light-emitting device and organic electroluminescence element employing the same 有权
标题翻译：发光装置的光提取层和使用该发光装置的有机电致发光元件
公开(公告)号：US08355204B2
公开(公告)日：2013-01-15
申请号：US12346937
申请日：2008-12-31
申请人： Tsutomu Nakanishi , Akira Fujimoto , Shigeru Matake , Koji Asakawa
发明人： Tsutomu Nakanishi , Akira Fujimoto , Shigeru Matake , Koji Asakawa
IPC分类号： G02B5/18 , G02B27/42
CPC分类号： H01L51/5262 , H01L51/5271 , H01L2251/5315
摘要： The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.
摘要翻译：本发明提供了光提取效率优异的高效率的光提取层和有机电致发光元件。本发明的光提取层包括反射层和在其上形成的三维衍射层。衍射层包括具有10％以下的粒径变化系数的微粒和具有与微粒的折射率不同的折射率的基质。基于衍射层的体积，粒子的体积分数为50％以上。颗粒被布置成形成具有短距离周期的第一区域，并且第一区域在随机方向上彼此设置和相邻，以形成第二区域。本发明的有机电致发光元件包含上述光提取层。

56. 发明授权

US08334547B2 Light-transmitting metal electrode having hyperfine structure and process for preparation thereof 有权
标题翻译：具有超精细结构的透光金属电极及其制备方法
公开(公告)号：US08334547B2
公开(公告)日：2012-12-18
申请号：US12187653
申请日：2008-08-07
申请人： Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa
发明人： Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa
IPC分类号： H01L33/00
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

57. 发明授权

US07786665B2 Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency 有权
$Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency$
标题翻译：具有用于提高光提取效率的衍射光栅的有机电致发光器件
公开(公告)号：US07786665B2
公开(公告)日：2010-08-31
申请号：US11319508
申请日：2005-12-29
申请人： Tsutomu Nakanishi , Toshiro Hiraoka , Akira Fujimoto , Koji Asakawa , Satoshi Saito
发明人： Tsutomu Nakanishi , Toshiro Hiraoka , Akira Fujimoto , Koji Asakawa , Satoshi Saito
IPC分类号： H01L21/00 , H01L35/24 , H05B33/22 , H01L29/08
CPC分类号： H01L51/5275
摘要： An organic electroluminescent device is provided, which includes an emission portion comprising a first electrode and a second electrode and an organic layer sandwiched between the first and second electrodes, and a diffraction grating disposed neighboring on the emission portion, the diffraction grating having first regions and a second region, the first regions comprising a plurality of pair of recessed and projected portions, the plurality of pair of recessed and projected portions being periodically arranged and provided with a primitive translation vector of a direction, the second region comprising an aggregate of the first regions and located parallel with an emission surface of the organic electroluminescent device.
摘要翻译：提供一种有机电致发光器件，其包括发射部分，其包括第一电极和第二电极以及夹在第一和第二电极之间的有机层，以及围绕发射部分设置的衍射光栅，衍射光栅具有第一区域和第二区域，所述第一区域包括多个凹入和突出部分，所述多个凹入和突出部分周期性地布置并且设置有方向的原始平移向量，所述第二区域包括所述第一区域的聚集体区域并且与有机电致发光器件的发射表面平行。

58. 发明申请

US20090176015A1 ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE 有权
标题翻译：抗逆结构形成方法与抗逆结构
公开(公告)号：US20090176015A1
公开(公告)日：2009-07-09
申请号：US12347187
申请日：2008-12-31
申请人： Tsutomu NAKANISHI , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
发明人： Tsutomu NAKANISHI , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
IPC分类号： B05D5/02 , B05C19/00 , G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译：本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。此外，本发明还提供了通过该方法形成的抗反射结构。在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。也可以通过使用压模的纳米压印方法制造抗反射结构。通过使用根据上述形成方法制造的母版形成压模。

59. 发明申请

US20090079322A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 有权
标题翻译：具有高分子结构的发光金属电极及其制备方法
公开(公告)号：US20090079322A1
公开(公告)日：2009-03-26
申请号：US12187653
申请日：2008-08-07
申请人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
发明人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
IPC分类号： H01J1/54 , H01B13/00 , B05D5/12
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂，用于380nm至780nm。这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内，开口的中心之间的间距不小于平均直径，不大于1/2 的入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

60. 发明授权

US07179672B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07179672B2
公开(公告)日：2007-02-20
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

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