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51. 发明授权

US09057949B2 Patterning process, resist composition, polymer, and polymerizable ester compound 有权
标题翻译：图案化方法，抗蚀剂组合物，聚合物和可聚合酯化合物
公开(公告)号：US09057949B2
公开(公告)日：2015-06-16
申请号：US13707075
申请日：2012-12-06
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takeru Watanabe , Tomohiro Kobayashi , Jun Hatakeyama , Kazuhiro Katayama , Takeshi Kinsho
IPC分类号： G03F7/039 , G03F7/32 , G03F7/004 , C08F20/10 , G03F7/20 , C08F220/28 , C08F232/08
CPC分类号： G03F7/004 , C08F20/10 , C08F220/28 , C08F232/08 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325 , C08F2220/283 , C08F220/20 , C08F222/06
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.
摘要翻译：通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。抗蚀剂组合物包含适于在酸的作用下形成内酯环的聚合物，使得聚合物可降低其在有机溶剂显影剂，酸产生剂和有机溶剂中的溶解度，显示在促进溶解和暴露区域的抑制溶解。

52. 发明授权

US08993222B2 Pattern forming process 有权
标题翻译：图案形成过程
公开(公告)号：US08993222B2
公开(公告)日：2015-03-31
申请号：US14156609
申请日：2014-01-16
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Jun Hatakeyama , Kazuhiro Katayama
IPC分类号： G03F7/20 , G03F7/00 , G03F7/039
CPC分类号： G03F7/2024 , G03F7/0035 , G03F7/0397
摘要： A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.
摘要翻译：通过涂布第一抗蚀剂组合物形成图案，所述第一抗蚀剂组合物包含具有酸不稳定基团的重复单元的树脂，使得在消除酸不稳定基团，光致酸产生剂和第一有机溶剂后可能将其溶解在有机溶剂中，预处理，曝光，PEB，并在有机溶剂显影剂中显影以形成第一负图案; 加热阴图案使其耐受在第二抗蚀剂组合物中使用的第二有机溶剂; 涂覆第二抗蚀剂组合物，预烘烤，曝光，PEB和在有机溶剂显影剂中显影以形成第二负图案。第一和第二负图形同时形成。

53. 发明授权

US08932803B2 Pattern forming process 有权
标题翻译：图案形成过程
公开(公告)号：US08932803B2
公开(公告)日：2015-01-13
申请号：US14105331
申请日：2013-12-13
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Jun Hatakeyama , Kazuhiro Katayama
IPC分类号： G03F7/26 , G03F7/20
CPC分类号： G03F7/2024 , G03F7/0035 , G03F7/0397
摘要： A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.
摘要翻译：通过涂覆第一化学放大的正型抗蚀剂组合物形成图案，该组合物包含含有酸不稳定基团的重复单元的树脂，使得在消除酸不稳定基团，光致酸发生剂和第一有机溶剂后，其可溶于碱性显影剂在可加工的基材上，预烘烤，曝光，PEB和在碱性显影剂中显影以形成正型图案; 加热阳性图案以使其抵抗在第二抗蚀剂组合物中使用的第二有机溶剂; 涂覆第二抗蚀剂组合物，预烘烤，曝光，PEB和在第三有机溶剂中显影以形成负图案。正面图案和负图案同时形成。

54. 发明授权

US08877424B2 Monomer, polymer, resist composition, and patterning process 有权
标题翻译：单体，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08877424B2
公开(公告)日：2014-11-04
申请号：US13762859
申请日：2013-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masayoshi Sagehashi , Jun Hatakeyama , Koji Hasegawa , Kazuhiro Katayama
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03F7/004
CPC分类号： G03F7/004 , G03F7/039 , G03F7/0397 , G03F7/20 , G03F7/325
摘要： A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.
摘要翻译：聚合物由其醇基羟基被含脂环的叔烷基保护的金刚烷基甲基丙烯酸酯单体制备。包含聚合物的光致抗蚀剂组合物在碱性显影和有机溶剂显影期间显示出高灵敏度和高溶解度对比度。

55. 发明申请

US20140322650A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20140322650A1
公开(公告)日：2014-10-30
申请号：US14249396
申请日：2014-04-10
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Masaki Ohashi , Masahiro Fukushima , Tomohiro Kobayashi , Kazuhiro Katayama , Chuanwen Lin
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(═O)—O—Z′—, Z′ is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.
摘要翻译：通过将包含式（1）和（2）的重复单元的聚合物的抗蚀剂组合物和式（3）的光致酸产生剂涂覆在基材上，烘烤，曝光，PEB和在有机溶剂中显影来形成负型图案。在式（1）和（2）中，R1是H，F，CH3或CF3，Z是单键，亚苯基，亚萘基或（主链）-C（= O）-O-Z'-，Z' 亚烷基，亚苯基或亚萘基，XA是酸不稳定基团，YL是H或极性基团。在式（3）中，R 2和R 3是一价烃基，R 4是二价烃基，或R 2和R 3，或者R 2和R 4可以与硫形成环，L是单键或二价烃基， Xa和Xb为H，F或CF3，k为1〜4的整数。

56. 发明申请

US20140308614A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER 有权
标题翻译：绘图工艺，耐腐蚀组合物，聚合物和单体
公开(公告)号：US20140308614A1
公开(公告)日：2014-10-16
申请号：US14212948
申请日：2014-03-14
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Koji Hasegawa , Masayoshi Sagehashi , Tomohiro Kobayashi , Kazuhiro Katayama
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , C08F220/24 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/2041 , G03F7/325 , G03F7/40
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.
摘要翻译：通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，PEB和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域，形成负图案。抗蚀剂组合物基于包含式（1）的重复单元（a1）的聚合物，其中R 1是H或CH 3，R 2和R 3是H，F或一价烃基，R 4是H或一价烃基，R 5和 R6是一价烃基，X1是二价烃基，k1 = 0或1.可以由其形成细孔或沟槽图案。

57. 发明申请

US20140199637A1 PATTERN FORMING PROCESS 有权
标题翻译：图案形成过程
公开(公告)号：US20140199637A1
公开(公告)日：2014-07-17
申请号：US14105331
申请日：2013-12-13
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Kazuhiro Katayama
IPC分类号： G03F7/20
CPC分类号： G03F7/2024 , G03F7/0035 , G03F7/0397
摘要： A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.
摘要翻译：通过涂覆第一化学放大的正型抗蚀剂组合物形成图案，该组合物包含含有酸不稳定基团的重复单元的树脂，使得在消除酸不稳定基团，光致酸发生剂和第一有机溶剂后，其可溶于碱性显影剂在可加工的基材上，预烘烤，曝光，PEB和在碱性显影剂中显影以形成正型图案; 加热阳性图案以使其抵抗在第二抗蚀剂组合物中使用的第二有机溶剂; 涂覆第二抗蚀剂组合物，预烘烤，曝光，PEB和在第三有机溶剂中显影以形成负图案。正面图案和负图案同时形成。

58. 发明申请

US20140199632A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER 有权
标题翻译：绘图工艺，耐腐蚀组合物，聚合物和单体
公开(公告)号：US20140199632A1
公开(公告)日：2014-07-17
申请号：US14146150
申请日：2014-01-02
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Koji Hasegawa , Masayoshi Sagehashi , Kazuhiro Katayama , Tomohiro Kobayashi
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , C08F220/26 , C08F2220/282 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/085 , G03F7/11 , G03F7/325
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent displays a high dissolution contrast. A fine hole or trench pattern can be formed therefrom.
摘要翻译：通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，PEB和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域，形成负图案。抗蚀剂组合物包含适于在酸的作用下形成内酯环的聚合物，使得聚合物可降低其在有机溶剂中的溶解度显示高溶解度对比度。可以由此形成细孔或沟槽图案。

59. 发明申请

US20140199631A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：单体，聚合物，组合物和方法
公开(公告)号：US20140199631A1
公开(公告)日：2014-07-17
申请号：US14108549
申请日：2013-12-17
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masayoshi Sagehashi , Koji Hasegawa , Kazuhiro Katayama
IPC分类号： G03F7/038 , C07D309/12 , C07C69/533
CPC分类号： G03F7/0392 , C07C69/54 , C07C2602/42 , C07C2603/68 , C07D309/12 , G03F7/0046 , G03F7/0325 , G03F7/038 , G03F7/0397 , G03F7/2041
摘要： A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3 and R2 is H or an acid labile group. A resist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.
摘要翻译：用于抗蚀剂的聚合物可从具有式（1）的单体获得，其中R1是H，CH3或CF3，R2是H或酸不稳定基团。包含聚合物的抗蚀剂组合物在碱性显影和有机溶剂显影期间显示出高灵敏度和高溶解度对比度。

60. 发明申请

US20130157194A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND 有权
标题翻译：花纹法，抗菌组合物，聚合物和聚合酯化合物
公开(公告)号：US20130157194A1
公开(公告)日：2013-06-20
申请号：US13707075
申请日：2012-12-06
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takeru Watanabe , Tomohiro Kobayashi , Jun Hatakeyama , Kazuhiro Katayama , Takeshi Kinsho
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , C08F20/10 , C08F220/28 , C08F232/08 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325 , C08F2220/283 , C08F220/20 , C08F222/06
摘要： A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.
摘要翻译：通过将抗蚀剂组合物施加到基材上，预烘烤，暴露于高能辐射，烘烤（PEB）和在有机溶剂显影剂中显影曝光的抗蚀剂膜以溶解抗蚀剂膜的未曝光区域来形成负图案。抗蚀剂组合物包含适于在酸的作用下形成内酯环的聚合物，使得聚合物可降低其在有机溶剂显影剂，酸产生剂和有机溶剂中的溶解度，显示在促进溶解和暴露区域的抑制溶解。

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