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51. 发明授权

US07569906B2 Method for fabricating condenser microphone and condenser microphone 有权
标题翻译：制造电容式麦克风和电容麦克风的方法
公开(公告)号：US07569906B2
公开(公告)日：2009-08-04
申请号：US11702531
申请日：2007-02-06
申请人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
发明人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
IPC分类号： H01L29/00 , H01L29/84
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译：第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

52. 发明申请

US20090014759A1 SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090014759A1
公开(公告)日：2009-01-15
申请号：US12233080
申请日：2008-09-18
申请人： Mitsuyoshi MORI , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
发明人： Mitsuyoshi MORI , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译：本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

53. 发明申请

US20090009621A1 Solid-State Imaging Device, Signal Processing Method, and Camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US20090009621A1
公开(公告)日：2009-01-08
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

54. 发明授权

US07352020B2 Solid-state image pickup device, and manufacturing method thereof 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07352020B2
公开(公告)日：2008-04-01
申请号：US10526564
申请日：2002-09-12
申请人： Takumi Yamaguchi
发明人： Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H04N5/3597 , H04N5/3742
摘要： The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging region 10 and a driving region 20 both formed on a p-type silicon substrate (hereinafter called an “Si substrate”) 31. The imaging region 10 includes six pixels 11 to 16 disposed in a shape of a matrix having 2 rows and 3 columns. The driving region 20 includes a timing generation circuit 21, a vertical shift resistor 22, a horizontal shift resistor 23, a pixel selection circuit 24, and so on. All transistors included in the pixels 11 to 16 in the imaging region and the circuits 21 to 24 in the driving circuit region 20 are of n-channel MOS type.
摘要翻译：本发明的目的在于提供一种在驱动操作期间实现较少漏电流，高图像质量和低噪声的固态成像装置及其制造方法。 MOS型成像装置1包括在p型硅衬底（以下称为“Si衬底”）31上形成的成像区域10和驱动区域20。成像区域10包括以具有2行和3列的矩阵的形状设置的六个像素11至16。驱动区域20包括定时生成电路21，垂直移位电阻22，水平移动电阻23，像素选择电路24等。包括在成像区域中的像素11至16中的所有晶体管和驱动电路区域20中的电路21至24均为n沟道MOS型。

55. 发明申请

US20070012968A1 Solid-state imaging device and camera 审中-公开
公开(公告)号：US20070012968A1
公开(公告)日：2007-01-18
申请号：US11523578
申请日：2006-09-20
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

56. 发明申请

US20050045925A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20050045925A1
公开(公告)日：2005-03-03
申请号：US10930814
申请日：2004-09-01
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L21/8238 , H01L27/148
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.
摘要翻译：本发明是形成在硅基板1上的固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。该固态成像装置包括针对每个像素的成像区域，该成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度杂质密度最大的第一导电类型。

57. 发明授权

US06548879B2 Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same 有权
标题翻译：具有热检测元件和绝缘腔的半导体器件及其制造方法
公开(公告)号：US06548879B2
公开(公告)日：2003-04-15
申请号：US09896810
申请日：2001-06-29
申请人： Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
发明人： Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
IPC分类号： H01L2714
CPC分类号： G01J5/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
摘要翻译：本发明提供一种包括硅衬底的半导体器件; 包括氧化硅膜的绝热层; 以及热检测部，其中所述绝热层包括封闭空腔和/或孔，所述孔的内部具有比所述孔的开口大的直径，并且所述封闭空腔或所述孔的至少一部分形成在氧化硅膜内。本发明还提供一种制造该半导体器件的方法。

58. 发明授权

US08737041B2 Capacitor and method of manufacturing the same 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08737041B2
公开(公告)日：2014-05-27
申请号：US13307199
申请日：2011-11-30
申请人： Toshiaki Shimizu , Kiyoshi Shibuya , Takumi Yamaguchi , Kouji Ueoka , Ichiro Aoki
发明人： Toshiaki Shimizu , Kiyoshi Shibuya , Takumi Yamaguchi , Kouji Ueoka , Ichiro Aoki
IPC分类号： H01G9/08
CPC分类号： H01G9/10 , H01G9/08 , Y02T10/7022
摘要： A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.
摘要翻译：电容器包括电容器元件，与电容器元件的电极接合的集电板，以及容纳电容器元件和集电板的壳体。壳体的底板的内表面具有接触集电板的接触部分和面向集电板的接合部分。底板的内表面的接合部分具有通过接合部和集电板之间的间隙连接到集电板的接合点和接合点周围的集电板的分离部。集电板位于远离接触部分的位置。

59. 发明申请

US20120120550A1 CAPACITOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20120120550A1
公开(公告)日：2012-05-17
申请号：US13307199
申请日：2011-11-30
申请人： Toshiaki Shimizu , Kiyoshi Shibuya , Takumi Yamaguchi , Kouji Ueoka , Ichiro Aoki
发明人： Toshiaki Shimizu , Kiyoshi Shibuya , Takumi Yamaguchi , Kouji Ueoka , Ichiro Aoki
IPC分类号： H01G9/00 , H01G9/04
CPC分类号： H01G9/10 , H01G9/08 , Y02T10/7022
摘要： A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.
摘要翻译：电容器包括电容器元件，与电容器元件的电极接合的集电板，以及容纳电容器元件和集电板的壳体。壳体的底板的内表面具有接触集电板的接触部分和面向集电板的接合部分。底板的内表面的接合部分具有通过接合部和集电板之间的间隙连接到集电板的接合点和接合点周围的集电板的分离部。集电板位于远离接触部分的位置。

60. 发明授权

US07800144B2 Solid state imaging apparatus and method for fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US07800144B2
公开(公告)日：2010-09-21
申请号：US12233080
申请日：2008-09-18
申请人： Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
发明人： Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译：本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

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