专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20050112814A1 Method of fabricating CMOS transistor that prevents gate thinning 有权
标题翻译：制造防止栅极薄化的CMOS晶体管的方法
公开(公告)号：US20050112814A1
公开(公告)日：2005-05-26
申请号：US10994042
申请日：2004-11-19
申请人： Eun-kuk Chung , Joon Kim , Suk-Chul Bang , Jong-Sun Ahn , Sang-hoon Lee , Woo-soon Jang , Yung-jun Kim
发明人： Eun-kuk Chung , Joon Kim , Suk-Chul Bang , Jong-Sun Ahn , Sang-hoon Lee , Woo-soon Jang , Yung-jun Kim
IPC分类号： H01L21/311 , H01L21/8238 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/8234 , H01L21/84
CPC分类号： H01L21/823842 , H01L21/31111 , H01L21/31144
摘要： Provided is a method of fabricating a CMOS transistor in which, after a polysilicon layer used as a gate is formed on a semiconductor substrate, a photoresist pattern that exposes an n-MOS transistor region is formed on the polysilicon layer. An impurity is implanted in the polysilicon layer of the n-MOS transistor region using the photoresist pattern as a mask, and the photoresist pattern is removed. If the polysilicon layer of the n-MOS transistor region is damaged by the implanting of the impurity, the polysilicon layer of the n-MOS transistor region is annealed, and a p-MOS transistor gate and an n-MOS transistor gate are formed by patterning the polysilicon layer. The semiconductor substrate, the p-MOS transistor gate and the n-MOS transistor gate is cleaned with a hydrofluoric acid (HF) solution, without causing a decrease in height of the n-MOS transistor gate.
摘要翻译：提供一种制造CMOS晶体管的方法，其中在半导体衬底上形成用作栅极的多晶硅层之后，在多晶硅层上形成曝光n-MOS晶体管区的光刻胶图案。使用光致抗蚀剂图案作为掩模，在n-MOS晶体管区域的多晶硅层中注入杂质，除去光致抗蚀剂图案。如果n-MOS晶体管区域的多晶硅层通过注入杂质而损坏，则n-MOS晶体管区域的多晶硅层退火，并且p-MOS晶体管栅极和n-MOS晶体管栅极由构图多晶硅层。用氢氟酸（HF）溶液清洗半导体衬底，p-MOS晶体管栅极和n-MOS晶体管栅极，而不会降低n-MOS晶体管栅极的高度。

52. 发明授权

US5945766A Coreless-type BLDC motor and method of producing stator assembly having axial vibration attenuation arrangement 失效
标题翻译：无芯型BLDC电动机和具有轴向振动衰减装置的定子组件的制造方法
公开(公告)号：US5945766A
公开(公告)日：1999-08-31
申请号：US783908
申请日：1997-01-16
申请人： Byungkyu Kim , Joon Kim , Boris Bazarov , Donghoon Kim
发明人： Byungkyu Kim , Joon Kim , Boris Bazarov , Donghoon Kim
IPC分类号： H02K29/00 , H02K3/04 , H02K11/04 , H02K16/00 , H02K21/24 , H02K29/08 , H02K16/02
CPC分类号： H02K21/24 , H02K11/33 , H02K16/00 , H02K29/08
摘要： A double rotor-type brushless direct-current motor includes first and second annular-shaped rotors each having a plurality of north and south-polar magnets which are alternately disposed at a predetermined distance; a rotating shaft connected to a central portion of the rotors thorough a bushing; upper and lower cases receiving and rotatably supporting opposite ends of the rotating shaft; an annular-shaped stator having a plurality of stator coils supported by a molding filler to apply electromagnetic force to the first and second rotors in an opposite direction to each other, the stator being mounted between the first and second rotors at a predetermined clearance; and a control printed circuit board for applying a driving current with respect to the stator, the control printed circuit board being mounted one of the upper and lower cases; wherein the upper and lower cases, the control printed circuit board, the first and second rotors have a plurality of ventilating holes for circulating air from the outer side of the motor to the inside of the motor.
摘要翻译：双转子型无刷直流电动机包括第一和第二环形转子，每个转子具有以预定距离交替设置的多个北极和南极磁体; 旋转轴通过衬套连接到转子的中心部分; 容纳和旋转地支撑旋转轴的相对端的上壳体和下壳体; 环形定子，其具有多个定子线圈，所述多个定子线圈由模制填料支撑，以相反的方向对第一和第二转子施加电磁力，定子以预定的间隙安装在第一和第二转子之间; 以及控制印刷电路板，用于对所述定子施加驱动电流，所述控制印刷电路板安装在所述上壳体和所述下壳体中的一个上; 其特征在于，所述上壳体，所述控制印刷电路板，所述第一转子和所述第二转子具有多个用于将空气从所述电动机的外侧循环到所述电动机的内部的通气孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式