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    • 53. 发明授权
    • Devices including a gas barrier layer
    • 装置包括阻气层
    • US09058824B2
    • 2015-06-16
    • US14313611
    • 2014-06-24
    • Seagate Technology LLC
    • Yuhang ChengScott FranzenEd F. RejdaKurt W. WiermanMichael Allen Seigler
    • G11B11/00G11B5/40G11B5/48G11B5/00
    • G11B5/40G11B5/3106G11B5/3136G11B5/314G11B5/3163G11B5/486G11B5/4866G11B2005/0021
    • Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.
    • 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的阻气层; 以及位于所述阻气层的至少一部分上的耐磨层,其中所述阻气层包括氧化钽(TaO),氧化钛(TiO),氧化铬(CrO),氧化硅(SiO),氧化铝(AlO ),氧化钛(TiO),氧化锆(ZrO),氧化钇(YO),氧化镁(MgO),氧化铍(BeO),氧化铌(NbO),氧化铪(HfO),氧化钒(VO) 氧化锶(SrO)或其组合; 氮化硅(SiN),氮化铝(Al),氮化硼(BN),氮化钛(TiN),氮化锆(ZrN),氮化硼(NbN),氮化铪(HfN),氮化铬(CrN) 碳化硅(SiC),碳化钛(TiC),碳化锆(ZrC),碳化铌(NbC),碳化铬(CrC),碳化钒(VC),碳化硼(BC)或其组合或其组合。