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    • 51. 发明申请
    • Digital temperature sensing device using temperature depending characteristic of contact resistance
    • 数字温度传感器采用接触电阻的温度依赖特性
    • US20080061868A1
    • 2008-03-13
    • US11979871
    • 2007-11-09
    • Hi-Hyun HanJun-Gi Choi
    • Hi-Hyun HanJun-Gi Choi
    • G05F1/567
    • G01K7/01G01K7/226
    • A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
    • 数字温度感测装置使用MOS晶体管的接触电阻的温度依赖特性,并且自刷新驱动装置使用数字温度感测装置根据温度调节其自刷新周期。 自刷新驱动装置包括:第一参考电压产生单元,用于产生对温度稳定的参考电压,第一参考电压产生装置形成有多个MOS晶体管,调节MOS晶体管的源极触点数,使得 通过源极漏极的饱和电流变化得到补偿; 第二参考电压产生单元,用于产生对温度敏感的第二参考电压; 电平比较器,用于将第一参考电压与第二参考电压进行比较; 以及用于根据电平比较器的输出信号产生具有不同周期的时钟信号的振荡器。
    • 52. 发明申请
    • Internal voltage detection circuit
    • 内部电压检测电路
    • US20070279123A1
    • 2007-12-06
    • US11806558
    • 2007-06-01
    • Sang-Jin ByeonTae-Yun KimJun-Gi Choi
    • Sang-Jin ByeonTae-Yun KimJun-Gi Choi
    • G05F1/10
    • G05F1/465
    • An internal voltage generator for use in a semiconductor memory device includes a first voltage detection unit, a second voltage detection unit, a detection signal generation unit, and an internal voltage generation unit. The first voltage detection unit detects a voltage level of an internal voltage changing linearly depending on a temperature variation to output a first detection signal. The second voltage detection unit detects the voltage level having a constant value without concerning the temperature variation to output a second detection signal. The detection signal output unit combines the first and the second detection signal to generate a combined detection signal for detecting the voltage level linearly varying according to the temperature variation in a first range of temperature and detecting the voltage level having the constant value in a second range of temperature.
    • 用于半导体存储器件的内部电压发生器包括第一电压检测单元,第二电压检测单元,检测信号生成单元和内部电压产生单元。 第一电压检测单元检测根据温度变化线性变化的内部电压的电压电平,以输出第一检测信号。 第二电压检测单元检测具有恒定值的电压电平而不涉及温度变化以输出第二检测信号。 检测信号输出单元组合第一和第二检测信号以产生组合检测信号,用于根据第一温度范围内的温度变化检测线性变化的电压电平,并检测具有第二范围中的常数值的电压电平 的温度。
    • 53. 发明授权
    • Boosted voltage generator
    • 升压电压发生器
    • US07250809B2
    • 2007-07-31
    • US11019394
    • 2004-12-23
    • Jun-Gi Choi
    • Jun-Gi Choi
    • G05F1/10
    • G11C29/021G11C29/02G11C2029/5004
    • The present invention provides a boosted voltage generator of a semiconductor device where a boosted voltage efficiency and drivability at a target boosted voltage level can be evaluated accurately by employing an enable signal generator. The boosted voltage generator includes a boosted voltage pad; a level detection means for detecting whether or not a present boosted voltage reaches a target boosted voltage level; an oscillation means for performing an oscillation mode in response to a signal outputted from the level detection means; a charge pumping means for outputting a level-controlled boosted voltage in response to a signal outputted from the oscillation means; and an enable signal generation means for operating the oscillation means in response to a signal outputted from the level detection means.
    • 本发明提供一种半导体器件的升压电压发生器,其中可以通过使用使能信号发生器来精确地评估目标升压电压电平下的升压电压效率和驱动能力。 升压电压发生器包括升压电压焊盘; 电平检测装置,用于检测当前升压电压是否达到目标升压电压电平; 用于响应于从电平检测装置输出的信号执行振荡模式的振荡装置; 电荷泵送装置,用于响应于从振荡装置输出的信号输出电平控制升压电压; 以及使能信号发生装置,用于响应于从电平检测装置输出的信号来操作振荡装置。
    • 54. 发明申请
    • Internal voltage generating circuit
    • 内部电压发生电路
    • US20070069805A1
    • 2007-03-29
    • US11529254
    • 2006-09-29
    • Jun-Gi ChoiSeung-Min Oh
    • Jun-Gi ChoiSeung-Min Oh
    • G05F1/10
    • G05F1/465
    • An internal voltage generating circuit detects a level of a back bias voltage or a pumping voltage and controls a period of an oscillating signal based on the result of counting timing when the detected voltage is lower than a reference voltage. The internal voltage generating circuit includes a back bias/pumping voltage detector for detecting a level difference between a back bias/pumping voltage and a reference voltage, a period controller for controlling a period of an oscillating signal based on the detection result of the back bias/pumping voltage detector, and a pumping unit for pumping the back bias/pumping voltage according to an activation period of the oscillating signal.
    • 内部电压产生电路检测反偏压或抽运电压的电平,并且当检测电压低于参考电压时,基于计数定时的结果来控制振荡信号的周期。 内部电压产生电路包括用于检测反向偏压/泵浦电压与参考电压之间的电平差的反向偏置/泵浦电压检测器,用于基于反向偏置的检测结果来控制振荡信号的周期的周期控制器 泵浦电压检测器和用于根据振荡信号的激活周期来泵浦反偏压/泵浦电压的泵浦单元。
    • 55. 发明申请
    • Internal voltage generator
    • 内部电压发生器
    • US20070069802A1
    • 2007-03-29
    • US11478077
    • 2006-06-30
    • Jun-Gi ChoiYoon-Jae Shin
    • Jun-Gi ChoiYoon-Jae Shin
    • G05F1/10G11C5/14G05F3/02
    • G11C5/147G05F1/465
    • An internal voltage generator supplies a stable internal voltage without increasing standby current. The internal voltage generator includes an internal voltage driver for supplying an internal voltage based on a control signal, a feedback circuit for supplying a feedback voltage having a voltage level proportional to the internal voltage, a control signal generating circuit for generating the control signal to control the internal voltage driver such that the feedback voltage is maintained at a desired reference voltage, an auxiliary driving circuit for additionally supplying the internal voltage in response to the control signal, and an auxiliary driving control circuit for activating the auxiliary driving circuit only when it is expected to dissipate a large amount of a current.
    • 内部电压发生器提供稳定的内部电压,而不增加待机电流。 内部电压发生器包括用于基于控制信号提供内部电压的内部电压驱动器,用于提供具有与内部电压成比例的电压电平的反馈电压的反馈电路,用于产生控制信号以控制的控制信号发生电路 所述内部电压驱动器使得所述反馈电压保持在期望的参考电压,辅助驱动电路,用于响应于所述控制信号另外提供所述内部电压;以及辅助驱动控制电路,用于仅在所述辅助驱动电路 预计会消散大量的电流。
    • 56. 发明申请
    • Boosted voltage generator
    • 升压电压发生器
    • US20050248387A1
    • 2005-11-10
    • US11019394
    • 2004-12-23
    • Jun-Gi Choi
    • Jun-Gi Choi
    • G11C5/14G11C7/00G11C29/02
    • G11C29/021G11C29/02G11C2029/5004
    • The present invention provides a boosted voltage generator of a semiconductor device where a boosted voltage efficiency and drivability at a target boosted voltage level can be evaluated accurately by employing an enable signal generator. The boosted voltage generator includes a boosted voltage pad; a level detection means for detecting whether or not a present boosted voltage reaches a target boosted voltage level; an oscillation means for performing an oscillation mode in response to a signal outputted from the level detection means; a charge pumping means for outputting a level-controlled boosted voltage in response to a signal outputted from the oscillation means; and an enable signal generation means for operating the oscillation means in response to a signal outputted from the level detection means.
    • 本发明提供一种半导体器件的升压电压发生器,其中可以通过使用使能信号发生器来精确地评估目标升压电压电平下的升压电压效率和驱动能力。 升压电压发生器包括升压电压焊盘; 电平检测装置,用于检测当前升压电压是否达到目标升压电压电平; 用于响应于从电平检测装置输出的信号执行振荡模式的振荡装置; 电荷泵送装置,用于响应于从振荡装置输出的信号输出电平控制升压电压; 以及使能信号发生装置,用于响应于从电平检测装置输出的信号来操作振荡装置。