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51. 发明授权

US08952948B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08952948B2
公开(公告)日：2015-02-10
申请号：US13292892
申请日：2011-11-09
申请人： Myung Kook Moon , Hyun Taek Nam , Jong Woo Kim
发明人： Myung Kook Moon , Hyun Taek Nam , Jong Woo Kim
IPC分类号： G09G5/00 , G09G3/34 , G09G3/36
CPC分类号： G09G3/3648 , G09G3/3614 , G09G3/3677 , G09G2300/0408 , G09G2310/0224 , G09G2310/0289 , G09G2310/08
摘要： An LCD device is discussed in which a level shifter generates two switching signals, and transmits the generated signals to a gate driver of a liquid crystal display panel by the use of one voltage signal transmitted from a timing controller. The LCD device according to an embodiment includes a liquid crystal display panel in which a gate driver for alternately driving two transistors is formed; a data driver which drives data lines of the liquid crystal display panel; a timing controller which generates one voltage signal for switching the two transistors, and outputs the one voltage signal; and a level shifter which generates two of first and second switching signals to switch the two transistors by using the one voltage signal, and outputs the generated switching signals to the gate driver.
摘要翻译：讨论了一种LCD装置，其中电平移位器产生两个开关信号，并且通过使用从定时控制器发送的一个电压信号将所生成的信号发送到液晶显示面板的栅极驱动器。根据实施例的LCD装置包括：液晶显示面板，其中形成用于交替驱动两个晶体管的栅极驱动器; 驱动液晶显示面板的数据线的数据驱动器; 定时控制器，其产生用于切换所述两个晶体管的一个电压信号，并输出所述一个电压信号; 以及电平移位器，其通过使用一个电压信号产生第一和第二开关信号中的两个以切换两个晶体管，并将所生成的开关信号输出到栅极驱动器。

52. 发明授权

US08846699B2 Quinazoline derivatives as a multiplex inhibitor and method for the preparation thereof 有权
标题翻译：喹唑啉衍生物作为多重抑制剂及其制备方法
公开(公告)号：US08846699B2
公开(公告)日：2014-09-30
申请号：US12093108
申请日：2006-11-08
申请人： Young-Gil Ahn , Jong Woo Kim , Keuk Chan Bang , Bum Woo Park , Se Young Kim , Kyungik Lee , Kyuhang Lee , Myoung-Sil Ko , Han Kyong Kim , Young Hoon Kim , Maeng Sup Kim , Gwan Sun Lee
发明人： Young-Gil Ahn , Jong Woo Kim , Keuk Chan Bang , Bum Woo Park , Se Young Kim , Kyungik Lee , Kyuhang Lee , Myoung-Sil Ko , Han Kyong Kim , Young Hoon Kim , Maeng Sup Kim , Gwan Sun Lee
IPC分类号： A61K31/517 , C07D239/94
CPC分类号： C07D239/94
摘要： The present invention relates to a novel quinazoline derivative compound having the formula (1) as follows: with the constituents defined in claim 1, and a pharmaceutically acceptable salt thereof as a multiplex inhibitor, a method for the preparation thereof, and a pharmaceutical composition and a therapeutic composition comprising same as an active ingredient. The inventive quinazoline derivative as a multiplex inhibitor can selectively and effectively inhibit diseases caused by the overactivity of a tyrosine kinase.
摘要翻译：本发明涉及一种具有式（1）的新型喹唑啉衍生物化合物，其具有如权利要求1所定义的组分及其药学上可接受的盐作为多重抑制剂，其制备方法和药物组合物，包含其作为活性成分的治疗组合物。作为多重抑制剂的本发明喹唑啉衍生物可以选择性和有效地抑制由酪氨酸激酶的过度活性引起的疾病。

53. 发明申请

US20130169400A1 TRANSFORMER AND POWER MODULE HAVING THE SAME 有权
标题翻译：具有相同功能的变压器和电源模块
公开(公告)号：US20130169400A1
公开(公告)日：2013-07-04
申请号：US13533596
申请日：2012-06-26
申请人： Deuk Hoon KIM , Dae Young Hwang , Myeong Jeong Kim , Jong Woo Kim , Chang Yong Kwon
发明人： Deuk Hoon KIM , Dae Young Hwang , Myeong Jeong Kim , Jong Woo Kim , Chang Yong Kwon
IPC分类号： H01F27/29
CPC分类号： H01F27/2823 , H01F27/2828 , H01F27/29 , H01F27/306 , H01F27/325
摘要： A transformer capable of security insulting reliability and a power module having the same are provided. The transformer includes: a winding unit having at least one winding space in which a plurality of coils are wound in a stacked manner on an outer circumferential surface of a cylindrical body portion; and a terminal fastening unit formed to extend from one end of the winding unit in an outer diameter direction and having a plurality of external connection terminals fastened to an end thereof, wherein a width of the winding space is less than 0.45 times that of a diameter of the body portion.
摘要翻译：提供了具有安全侮辱性可靠性的变压器和具有该变压器的功率模块。变压器包括：绕组单元，具有至少一个绕组空间，多个线圈以堆叠方式缠绕在圆筒体部分的外圆周表面上; 以及终端紧固单元，其形成为在外径方向上从所述卷绕单元的一端延伸并且具有紧固到其一端的多个外部连接端子，其中所述卷绕空间的宽度小于所述卷绕单元的直径的0.45倍的身体部位。

54. 发明授权

US08354704B2 Method for fabricating an enlarged oxide-nitride-oxide structure for NAND flash memory semiconductor devices 有权
标题翻译：制造用于NAND闪速存储器半导体器件的增大的氧化物 - 氮化物 - 氧化物结构的方法
公开(公告)号：US08354704B2
公开(公告)日：2013-01-15
申请号：US12917419
申请日：2010-11-01
申请人： Li Jiang , Hong Xiu Peng , Jong Woo Kim
发明人： Li Jiang , Hong Xiu Peng , Jong Woo Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/7881 , H01L29/42336 , H01L29/66825
摘要： A method of processing a flash memory device provides a semiconductor substrate including a surface region and forming a gate dielectric layer overlying the surface region. The method forms a floating gate layer having a thickness and including a first floating gate structure overlying a first portion of the gate dielectric layer and a second floating gate structure overlying a second portion of the gate dielectric layer. The method forms a trench region interposed between the first and second floating gate structures and extending through the entire thickness and through a portion of the surface region into a depth of the substrate. The method fills the entire depth of the trench region in the substrate and a portion of the trench region over the substrate using a dielectric fill material. The method forms an oxide on nitride on oxide (ONO) layer overlying the first and second floating gate structures and the dielectric material and a control gate overlying the ONO layer.
摘要翻译：一种处理闪速存储器件的方法提供了包括表面区域并形成覆盖在表面区域上的栅极电介质层的半导体衬底。该方法形成具有厚度并包括覆盖栅极电介质层的第一部分的第一浮动栅极结构和覆盖栅极电介质层的第二部分的第二浮动栅极结构的浮动栅极层。该方法形成插入在第一和第二浮栅结构之间并且延伸穿过整个厚度并且通过表面区域的一部分延伸到衬底的深度的沟槽区域。该方法使用电介质填充材料填充衬底中的沟槽区域的整个深度以及衬底上的沟槽区域的一部分。该方法在覆盖第一和第二浮栅结构和电介质材料的氧化物（ONO）层上的氮化物上形成氧化物，以及覆盖ONO层的控制栅极。

55. 发明申请

US20110149629A1 Semiconductor Memory Apparatus and Method of Operating the Same 有权
标题翻译：半导体存储器及其操作方法
公开(公告)号：US20110149629A1
公开(公告)日：2011-06-23
申请号：US12973000
申请日：2010-12-20
申请人： Sung Bo Shim , Sang Don Lee , Jong Woo Kim
发明人： Sung Bo Shim , Sang Don Lee , Jong Woo Kim
IPC分类号： G11C5/06 , G11C8/10 , G11C8/12 , G11C7/20
CPC分类号： G11C8/10 , G11C7/18 , G11C8/12 , G11C8/14 , G11C16/04 , G11C16/08
摘要： A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal.
摘要翻译：半导体存储器装置包括第一和第二存储块，每个存储块包括耦合到第一和第二本地线组的半导体元件，第一开关电路被配置为响应于第一和第二本地线组将第一全局线组耦合到第一存储器块的第一本地线组块选择信号，第二切换电路，被配置为响应于块选择信号将第二全局线组耦合到第一和第二存储器块的第二本地线组;以及第三开关电路，被配置为将第一全局线组响应于块选择信号到第二存储器块的第一本地线组。

56. 发明授权

US07940584B2 Method for inspecting the electrical performance of a flash memory cell 有权
标题翻译：用于检查闪存单元的电性能的方法
公开(公告)号：US07940584B2
公开(公告)日：2011-05-10
申请号：US11927432
申请日：2007-10-29
申请人： Tae Kyu Kim , Jong Woo Kim , Xianghua Ye
发明人： Tae Kyu Kim , Jong Woo Kim , Xianghua Ye
IPC分类号： G11C7/00
CPC分类号： G11C29/50 , G11C16/04 , G11C29/50004
摘要： The present invention discloses a method for inspecting the electrical performance of a flash memory cell, which comprises: performing electron-storage programming on a flash memory cell for a pre-determined period; screening out flash memory cells that reach a specified reference value as a mother batch of flash memory cells that meet the preliminary requirement, by measuring the threshold voltage; then performing a second electron-storage programming on the flash memory cells screened out for a certain time period; baking these flash memory cells; and finally, measuring the threshold voltage of these baked flash memory cells again and determining whether the threshold voltage can still be maintained at or above the reference value, so that it can be determined ultimately whether the flash memory cells meet the electrical performance requirements.
摘要翻译：本发明公开了一种用于检查闪速存储单元的电气性能的方法，该方法包括：在闪速存储单元上进行预定周期的电子存储编程; 通过测量阈值电压，筛选达到指定参考值的闪存单元作为满足初步要求的母版闪存单元; 然后在闪存单元上执行第二电子存储节目，屏蔽一段时间; 烘烤这些闪存单元; 最后，再次测量这些烘焙闪速存储器单元的阈值电压，并确定阈值电压是否仍然可以保持在基准值以上，从而可以最终确定闪存单元是否满足电气性能要求。

57. 发明授权

US07580532B2 Multi-channel pulse width modulation apparatus 有权
标题翻译：多通道脉宽调制装置
公开(公告)号：US07580532B2
公开(公告)日：2009-08-25
申请号：US10628380
申请日：2003-07-29
申请人： Dong Han Seo , Oh Suk Kwon , Jong Woo Kim , Jae Gun Lee , Chan Tae Kim
发明人： Dong Han Seo , Oh Suk Kwon , Jong Woo Kim , Jae Gun Lee , Chan Tae Kim
IPC分类号： H04R3/00
CPC分类号： H03G3/001 , H03F3/217 , H03F3/68 , H03M1/662 , H03M1/70 , H03M1/822
摘要： Disclosed are multi-channel PWM (Pulse Width Modulation) apparatuses and methods for modulating PCM-based multi-channel audio signals read from an optical medium into PWM-based multi-channel audio signals. A multi-channel PWM apparatus and method can reduce noise from amplifying PCM-based audio signals having adjacent signal processing paths. The multi-channel PWM apparatus and method selectively vary only gains of some channels in a plurality of channels in order to allow an audio signal applied to a pulse width modulator to have a different level in individual channels in a prescribed system condition (e.g., overload). The multi-channel PWM apparatus can selectively enable a subset among a plurality of pulse width modulators to reduce unnecessary driving and noise. Thus, preferred embodiments can reduce or prevent deterioration of output audio signals.
摘要翻译：公开了用于将从光学介质读取的基于PCM的多声道音频信号调制为基于PWM的多声道音频信号的多通道PWM（脉宽调制）装置和方法。多通道PWM装置和方法可以减少放大具有相邻信号处理路径的基于PCM的音频信号的噪声。多通道PWM装置和方法仅选择性地仅改变多个通道中的一些通道的增益，以便允许施加到脉宽调制器的音频信号在规定的系统条件下在各个通道中具有不同的电平（例如，过载）。多通道PWM装置可以选择性地使多个脉冲宽度调制器中的子集能够减少不必要的驱动和噪声。因此，优选实施例可以减少或防止输出音频信号的恶化。

58. 发明申请

US20080318950A1 Quinazoline Derivatives as a Multiplex Inhibitor and Method For the Preparation Thereof 有权
标题翻译：喹唑啉衍生物作为复合抑制剂及其制备方法
公开(公告)号：US20080318950A1
公开(公告)日：2008-12-25
申请号：US12093108
申请日：2006-11-08
申请人： Young-Gil Ahn , Jong Woo Kim , Keuk Chan Bang , Bum Woo Park , Se Young Kim , Kyungik Lee , Kyuhang Lee , Myoung-Sil Ko , Han Kyong Kim , Young Hoon Kim , Maeng Sup Kim , Gwan Sun Lee
发明人： Young-Gil Ahn , Jong Woo Kim , Keuk Chan Bang , Bum Woo Park , Se Young Kim , Kyungik Lee , Kyuhang Lee , Myoung-Sil Ko , Han Kyong Kim , Young Hoon Kim , Maeng Sup Kim , Gwan Sun Lee
IPC分类号： A61K31/5377 , C07D401/02 , A61K31/517 , C07D413/02 , A61P35/00
CPC分类号： C07D239/94
摘要： The present invention relates to a novel quinazoline derivative and a pharmaceutically acceptable salt thereof as a multiplex inhibitor, a method for the preparation thereof, and a pharmaceutical composition and a therapeutic composition comprising same as an active ingredient. The inventive quinazoline derivative as a multiplex inhibitor can selectively and effectively inhibit diseases caused by the overactivity of a tyrosine kinase.
摘要翻译：本发明涉及作为多重抑制剂的新型喹唑啉衍生物及其药学上可接受的盐，其制备方法，以及包含其作为活性成分的药物组合物和治疗组合物。作为多重抑制剂的本发明喹唑啉衍生物可以选择性和有效地抑制由酪氨酸激酶的过度活性引起的疾病。

59. 发明授权

US07161096B2 Mass measurement system and method using inertial force and standard mass in gravity-free environment 有权
标题翻译：质量测量系统和方法在无重力环境中使用惯性力和标准质量
公开(公告)号：US07161096B2
公开(公告)日：2007-01-09
申请号：US11179453
申请日：2005-07-12
申请人： Hong Yul Paik , Hae Jin Choi , Gi Hyuk Choi , Jong Woo Kim , Youn Kyu Kim
发明人： Hong Yul Paik , Hae Jin Choi , Gi Hyuk Choi , Jong Woo Kim , Youn Kyu Kim
IPC分类号： G01G9/00
CPC分类号： G01G9/00
摘要： The mass measurement system includes a linear acceleration motion unit that is a linear motion driving source, a first load cell fastened to the linear acceleration motion unit to measure an inertial force of a sample caused by linearly accelerated motion of the 10 linear acceleration motion unit, a second load cell fastened to the linear acceleration motion unit while being spaced apart from the first load cell by a predetermined distance, the second load cell measuring an inertial force of a standard sample having a known standard mass caused by the linearly accelerated motion of the linear acceleration motion unit, and a main control unit for calculating and outputting mass of the sample through an arithmetic operation based on the inertial forces, measured by the first and second load cells, and the standard mass, and controlling an entire operation of the system.
摘要翻译：质量测量系统包括作为线性运动驱动源的线性加速运动单元，紧固到线性加速运动单元的第一负载单元，用于测量由线性加速运动单元的线性加速运动引起的样本的惯性力，第二测力传感器，其在与所述第一测力传感器间隔开预定距离的状态下紧固到所述线性加速运动单元，所述第二称重传感器测量由所述线性加速运动单元的线性加速运动引起的具有已知标准质量的标准样品的惯性力线性加速运动单元，以及主控制单元，用于通过基于由第一和第二称重传感器测量的惯性力和标准质量的惯性运算来计算和输出样本的质量，并且控制系统的整个操作。

60. 发明授权

US06921917B2 Thin film transistor substrate and fabricating method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US06921917B2
公开(公告)日：2005-07-26
申请号：US10028304
申请日：2001-12-28
申请人： Seung Kyu Choi , Jae Moon Soh , Jong Woo Kim
发明人： Seung Kyu Choi , Jae Moon Soh , Jong Woo Kim
IPC分类号： H01L29/786 , G02F1/1368 , H01L27/12 , H01L29/423 , H01L29/06 , G02F1/136
CPC分类号： H01L27/12 , G02F1/1368 , H01L29/42384
摘要： A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.
摘要翻译：能够提高开口率的薄膜晶体管基板及其制造方法。该基板上的栅电极具有倾斜的头部和凹入的颈部。

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