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51. 发明申请

US20060269776A1 Hot dip alloyed zinc coated steel sheet and method for production thereof 有权
标题翻译：热浸镀锌钢板及其制造方法
公开(公告)号：US20060269776A1
公开(公告)日：2006-11-30
申请号：US10551159
申请日：2004-03-30
申请人： Koki Tanaka , Yoichi Ikematsu , Shunichi Hayashi , Hideaki Sawada , Akira Takahashi , Kazuhiko Honda , Masayoshi Suehiro , Yoshihisa Takada
发明人： Koki Tanaka , Yoichi Ikematsu , Shunichi Hayashi , Hideaki Sawada , Akira Takahashi , Kazuhiko Honda , Masayoshi Suehiro , Yoshihisa Takada
IPC分类号： B05D1/18 , C23C2/28 , C25D5/10
CPC分类号： C23C2/02 , C23C2/06 , C23C2/28 , Y10T428/12799
摘要： The present invention provides an alloyed molten zinc plated steel sheet having an area of the Fe and Zn alloy phase in the unformed parts in the plating layer of less than 10% of the area of the steel sheet as a whole and superior in strength and shapeability and a method of producing this alloyed molten zinc plating steel sheet by a continuous zinc plating production system which enables production at a low cost without modification of the system or addition of steps, said alloyed molten zinc plated steel sheet characterized by comprising a steel sheet including C: 0.05 to 0.40%, Si: 0.2 to 3.0%, and Mn: 0.1 to 2.5%, the balance comprised of Fe and unavoidable impurities, having on its surface a Zn alloy plating layer comprised of Fe in a concentration of 7 to 15 wt %, Al in a concentration of 0.01 to 1 wt %, and the balance of Zn and unavoidable impurities, said plating layer containing oxide particles of at least one type of oxide selected from an Al oxide, Si oxide, Mn oxide, and complex oxides of the same alone or in combination.
摘要翻译：本发明提供一种合金化的镀锌钢板，其镀层中未成形部分中的Fe和Zn合金相的面积小于钢板整体面积的10％，强度和成形性优良以及通过连续镀锌生产系统生产该合金化熔融镀锌钢板的方法，其能够在不改变系统或添加步骤的情况下以低成本生产，所述合金化的镀锌钢板的特征在于包括： C：0.05〜0.40％，Si：0.2〜3.0％，Mn：0.1〜2.5％，余量由Fe和不可避免的杂质组成，其表面上含有浓度为7〜15的Fe的Zn合金镀层重量％，Al为0.01〜1重量％的Al，余量由Zn和不可避免的杂质构成，所述镀层含有选自Al氧化物，Si氧化物，Mn氧化物中的至少一种氧化物的氧化物粒子，以及相同的复合氧化物单独或组合使用。

52. 发明申请

US20060269078A1 Vehicular active noise/vibration/sound control system, and vehicle incorporating such system 有权
标题翻译：车载有源噪声/振动/声音控制系统，以及包含该系统的车辆
公开(公告)号：US20060269078A1
公开(公告)日：2006-11-30
申请号：US11442357
申请日：2006-05-30
申请人： Kosuke Sakamoto , Toshio Inoue , Akira Takahashi , Yasunori Kobayashi
发明人： Kosuke Sakamoto , Toshio Inoue , Akira Takahashi , Yasunori Kobayashi
IPC分类号： A61F11/06 , G10K11/16 , H03B29/00
CPC分类号： G10K11/178 , G10K2210/1282 , G10K2210/12821 , G10K2210/12822 , G10K2210/129 , G10K2210/3016 , G10K2210/3031 , G10K2210/3046 , G10K2210/3214 , G10K2210/3219
摘要： An active noise/vibration/sound control system for a vehicle has an ANC (active noise control apparatus), an AVC (active vibration control apparatus), and an ASC (active sound control apparatus). To prevent the ANC, the AVC, and the ASC from interfering with each other and hence to prevent vehicle cabin environment of vibrations, noise, and sound from being impaired, activation and inactivation of the ANC, the AVC, and the ASC are controlled or their control characteristics are controlled in relation to each other by a weighting variable calculator as a coordination controller, depending on an engine rotation frequency and a frequency change which are representative of a running state of the vehicle as detected by an engine rotation frequency detector and a frequency change detector that serve as a running state detector.
摘要翻译：用于车辆的有源噪声/振动/声音控制系统具有ANC（主动噪声控制装置），AVC（主动振动控制装置）和ASC（有源声音控制装置）。为了防止ANC，AVC和ASC彼此干扰，因此防止车辆的振动，噪声和声音的环境受到损害，ANC，AVC和ASC的激活和失活被控制或根据由发动机旋转频率检测器检测到的代表车辆行驶状态的发动机旋转频率和频率变化，其控制特性通过作为协调控制器的加权变量计算器彼此相互控制，频率变化检测器，用作运行状态检测器。

53. 发明授权

US07114481B2 Stabilized bearing structure for supporting a crankshaft in an internal combustion engine, and engine including same 有权
标题翻译：用于支撑内燃机中的曲轴的稳定的轴承结构和包括其的发动机
公开(公告)号：US07114481B2
公开(公告)日：2006-10-03
申请号：US10949822
申请日：2004-09-24
申请人： Akira Takahashi , Teruo Kihara , Yoichi Tanaka
发明人： Akira Takahashi , Teruo Kihara , Yoichi Tanaka
IPC分类号： F16C9/02 , F02B67/06
CPC分类号： F16C35/06 , F02F7/0004 , F02F7/0053
摘要： An internal combustion engine includes a split crankcase with spaced-apart journal walls. Each journal wall has a bearing hole formed therein. The engine also includes rotary bearings for supporting rotary movement of a crankshaft. A backlash-absorbing mechanism is situated proximate a first one of the rotary bearings, for cushioning radial movement of an outer bearing race. Axial movement-restraining structure is also provided adjacent the outer race, for limiting axial movement thereof. The axial movement-restraining structure may include an engaging groove provided in an inner circumferential surface of the outer race, and a restraining clamp member operatively attached to a surface of the crankcase. The restraining clamp member may include a hook portion which engages with the engaging groove of the outer race. The axial movement-restraining structure allows at least one of the crankshaft support bearings to be a roller bearing or a needle bearing, instead of a ball bearing.
摘要翻译：内燃机包括具有间隔开的轴颈壁的分体式曲轴箱。每个轴颈壁上都有一个轴承孔。发动机还包括用于支撑曲轴的旋转运动的旋转轴承。靠近第一个旋转轴承的间隙吸收机构用于缓冲外部轴承座圈的径向运动。轴向运动限制结构也邻近外圈设置，以限制其轴向移动。轴向运动限制结构可以包括设置在外圈的内周面中的接合槽和可操作地附接到曲轴箱的表面的限制夹紧构件。限制夹紧构件可以包括与外圈的接合槽接合的钩部。轴向运动限制结构允许至少一个曲轴支撑轴承是滚子轴承或滚针轴承，而不是球轴承。

54. 发明授权

US07105438B2 Manufacturing method of a semiconductor device with a metal gate electrode and a structure thereof 失效
标题翻译：具有金属栅电极的半导体器件的制造方法及其结构
公开(公告)号：US07105438B2
公开(公告)日：2006-09-12
申请号：US11055770
申请日：2005-02-11
申请人： Akira Takahashi
发明人： Akira Takahashi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/76802 , H01L21/823475
摘要： In a manufacturing method of a semiconductor device, a metallic gate electrode film, a protective film and an offset nitride film are formed on a semiconductor substrate to compose a stacked structure. An insulating film which covers the stacked structure is etched to expose the offset nitride film, and the exposed offset nitride film is etched to expose the protective film. The exposed protective film may be etched to expose the metallic gate electrode film under predetermined etching conditions. An etching rate of the protective film is greater than that of the metallic gate electrode film. The etching of the insulating film and the etching of the exposed offset nitride film may form a contact hole. A conductive plug is formed in the contact hole.
摘要翻译：在半导体装置的制造方法中，在半导体基板上形成金属栅电极膜，保护膜和偏移氮化物膜，构成层叠结构。蚀刻覆盖堆叠结构的绝缘膜，以露出偏移氮化物膜，并且暴露的偏移氮化物膜被蚀刻以露出保护膜。可以蚀刻暴露的保护膜，以在预定的蚀刻条件下暴露金属栅电极膜。保护膜的蚀刻速率大于金属栅电极膜的蚀刻速率。绝缘膜的蚀刻和暴露的偏移氮化物膜的蚀刻可以形成接触孔。导电插塞形成在接触孔中。

55. 发明授权

US07094333B2 Selective sorbents for purification of hydrocarbons 失效
标题翻译：用于净化烃的选择性吸附剂
公开(公告)号：US07094333B2
公开(公告)日：2006-08-22
申请号：US10726935
申请日：2003-12-03
申请人： Ralph T. Yang , Arturo J. Hernandez-Maldonado , Frances H. Yang , Akira Takahashi
发明人： Ralph T. Yang , Arturo J. Hernandez-Maldonado , Frances H. Yang , Akira Takahashi
IPC分类号： C10G29/00
CPC分类号： C10G25/05 , B01J20/186 , C10G25/03
摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal cation that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.
摘要翻译：从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属阳离子，并且优先吸附通过π-络合而发生。另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

56. 发明申请

US20060094173A1 Method for forming semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US20060094173A1
公开(公告)日：2006-05-04
申请号：US11311365
申请日：2005-12-20
申请人： Akira Takahashi
发明人： Akira Takahashi
IPC分类号： H01L21/84
CPC分类号： H01L29/66772 , H01L21/743 , H01L21/76802 , H01L21/76828 , H01L21/84 , H01L27/1203 , H01L29/78648 , H01L29/78654
摘要： In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, substrate-biasing between an SOI transistor and the silicon substrate is performed via a plug. As a result, the contact hole for the substrate-biasing does not need to pass through an insulating layer, a silicon layer, and an interlayer insulating layer. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can be implanted to the surface of the substrate via the contact hole for substrate biasing. As a result, contact holes for substrate-biasing can be formed without the contact holes for substrate-biasing causing an opening fault.
摘要翻译：在形成提供给基板的固定电位的接触的绝缘体上硅FET的方法中，通过插头进行SOI晶体管和硅衬底之间的衬底偏置。结果，用于衬底偏压的接触孔不需要通过绝缘层，硅层和层间绝缘层。因此，可以使层间绝缘层的深度较浅。离子可以通过用于衬底偏压的接触孔植入衬底的表面。结果，可以形成用于基板偏压的接触孔，而不会产生用于基板偏置的接触孔，从而导致打开故障。

57. 发明授权

US07029574B2 Selective sorbents for purification of hydrocarbons 失效
标题翻译：用于净化烃的选择性吸附剂
公开(公告)号：US07029574B2
公开(公告)日：2006-04-18
申请号：US10393962
申请日：2003-03-21
申请人： Ralph T. Yang , Frances H. Yang , Akira Takahashi , Arturo J. Hernandez-Maldonado
发明人： Ralph T. Yang , Frances H. Yang , Akira Takahashi , Arturo J. Hernandez-Maldonado
IPC分类号： C10G29/10
CPC分类号： B01J20/186 , C10G25/03 , C10G25/05
摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal ion that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.
摘要翻译：从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属离子，并且通过π络合发生优先吸附。另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

58. 发明申请

US20060035096A1 Oriented syndiotactic polystyrene-base film 失效
公开(公告)号：US20060035096A1
公开(公告)日：2006-02-16
申请号：US10507126
申请日：2003-05-16
申请人： Masayuki Tsutsumi , Hisato Kobayashi , Keizo Kawahara , Shigeto Yoshida , Shinsuke Yamaguchi , Kazutaka Okamoto , Akira Takahashi , Eiji Kumagai , Akinobu Nagara , Yoshiko Akitomo , Kazumoto Imai , Naonobu Oda
发明人： Masayuki Tsutsumi , Hisato Kobayashi , Keizo Kawahara , Shigeto Yoshida , Shinsuke Yamaguchi , Kazutaka Okamoto , Akira Takahashi , Eiji Kumagai , Akinobu Nagara , Yoshiko Akitomo , Kazumoto Imai , Naonobu Oda
IPC分类号： B32B27/00
CPC分类号： C08J7/047 , C08J2325/06 , Y10T428/28 , Y10T428/2878 , Y10T428/2887 , Y10T428/2891 , Y10T428/2896 , Y10T428/31573 , Y10T428/31583 , Y10T428/31587 , Y10T428/31721 , Y10T428/3175 , Y10T428/31757 , Y10T428/31786 , Y10T428/31797 , Y10T428/31801 , Y10T428/31855 , Y10T428/31909 , Y10T428/31913 , Y10T428/31928 , Y10T428/31935 , Y10T428/31938
摘要： An oriented syndiotactic polystyrene-based film composed of an oriented film made of a syndiotactic styrene polymer and an adhesiveness-improving layer formed from a specific water-dispersible resin on at least one surface of the oriented film, which is excellent in the tight adhesion between the oriented film and the adhesiveness-improving layer, the adhesion between the adhesiveness-improving layer and an ink layer or laminate layer applied thereon, economical efficiency, recyclability, and environmental compatibility in production. It is particularly preferable that the film be produced by applying the aqueous dispersion of the water-dispersible resin on unstretched or uniaxially stretched film to form the adhesiveness-improving layer, stretching the obtained laminate uni- or bi-axially at least one time, and then heat-treating the resulting laminate.

59. 发明授权

US06995049B2 Method for forming semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US06995049B2
公开(公告)日：2006-02-07
申请号：US10445859
申请日：2003-05-28
申请人： Akira Takahashi
发明人： Akira Takahashi
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66772 , H01L21/743 , H01L21/76802 , H01L21/76828 , H01L21/84 , H01L27/1203 , H01L29/78648 , H01L29/78654
摘要： In a method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via a plug. As a result, a contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer of the structure. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can thus be implanted to the surface of the substrate via the contact hole for substrate-biasing. The contact hole for substrate-biasing can be formed without causing an opening fault.
摘要翻译：在形成具有向衬底提供固定电位的接触的绝缘体上硅FET的方法中，通过插头来执行SOI晶体管和硅衬底之间的衬底偏置。结果，用于基板偏置的接触孔不需要通过该结构的绝缘层，硅层和层间绝缘层。因此，可以使层间绝缘层的深度较浅。因此，离子可以经由用于衬底偏置的接触孔植入到衬底的表面。可以形成用于基板偏置的接触孔而不引起打开故障。

60. 发明授权

US06939786B2 Method of manufacturing a semiconductor device having self-aligned contacts 失效
标题翻译：具有自对准触点的半导体器件的制造方法
公开(公告)号：US06939786B2
公开(公告)日：2005-09-06
申请号：US10779752
申请日：2004-02-18
申请人： Akira Takahashi
发明人： Akira Takahashi
IPC分类号： H01L21/28 , H01L21/336 , H01L21/60 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L27/088 , H01L29/78 , H01L21/3205
CPC分类号： H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device having self-aligned contact structure with side wall spacers and offset nitride films. The method includes forming the side wall spacers as having lower side wall spacers that are composed of silicon oxide films and that are in contact with lower sides of gate electrode side walls, and as having upper side wall spacers that are composed of silicon nitride films and that are in contact with upper sides of the gate electrodes side walls. A distance is thus formed between the device substrate and an interface between the silicon nitride film and the silicon oxide film. This suppresses the hot carrier phenomenon and the occurence of poor contact.
摘要翻译：一种制造具有侧壁间隔物和偏移氮化物膜的自对准接触结构的半导体器件的方法。该方法包括将侧壁间隔物形成为具有由氧化硅膜构成并与栅电极侧壁的下侧接触的下侧壁间隔物，以及具有由氮化硅膜构成的上侧壁间隔物，其与栅电极侧壁的上侧接触。因此在器件基板和氮化硅膜与氧化硅膜之间的界面之间形成距离。这样就抑制了热载体现象和接触不良的发生。

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