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51. 发明授权

US09299880B2 Pseudomorphic electronic and optoelectronic devices having planar contacts 有权
标题翻译：具有平面接触的伪电子和光电器件
公开(公告)号：US09299880B2
公开(公告)日：2016-03-29
申请号：US14208379
申请日：2014-03-13
申请人： James R. Grandusky , Leo J. Schowalter , Muhammad Jamil , Mark C. Mendrick , Shawn R. Gibb
发明人： James R. Grandusky , Leo J. Schowalter , Muhammad Jamil , Mark C. Mendrick , Shawn R. Gibb
IPC分类号： H01L33/42 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/06 , H01L33/04 , H01L33/00 , H01L33/38
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译：在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。

52. 发明授权

US08747552B2 Doped aluminum nitride crystals and methods of making them 有权
标题翻译：掺杂氮化铝晶体及其制备方法
公开(公告)号：US08747552B2
公开(公告)日：2014-06-10
申请号：US12642182
申请日：2009-12-18
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B29/38
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译：具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。

53. 发明授权

US08123859B2 Method and apparatus for producing large, single-crystals of aluminum nitride 有权
标题翻译：用于生产大型单晶氮化铝的方法和装置
公开(公告)号：US08123859B2
公开(公告)日：2012-02-28
申请号：US12841350
申请日：2010-07-22
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B29/04
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译：具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。也可以使用该方法制造ZnO的块状晶体。

54. 发明申请

US20110011332A1 METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE 有权
标题翻译：用于生产氮化钛的大的单晶的方法和装置
公开(公告)号：US20110011332A1
公开(公告)日：2011-01-20
申请号：US12841350
申请日：2010-07-22
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B25/02
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译：具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。也可以使用该方法制造ZnO的块状晶体。

55. 发明授权

US10692980B2 Doped aluminum nitride crystals and methods of making them 有权
公开(公告)号：US10692980B2
公开(公告)日：2020-06-23
申请号：US16055228
申请日：2018-08-06
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B29/38 , H01L29/207 , C30B23/00 , C30B29/40 , H01L29/20 , H01L21/02 , H01L21/225 , H01L33/32
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

56. 发明授权

US09680057B2 Ultraviolet light-emitting devices incorporating two-dimensional hole gases 有权
公开(公告)号：US09680057B2
公开(公告)日：2017-06-13
申请号：US15267458
申请日：2016-09-16
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/14 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/44 , H01L33/00 , H01L33/02 , H01L33/36
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

57. 发明授权

US09525032B2 Doped aluminum nitride crystals and methods of making them 有权
标题翻译：掺杂氮化铝晶体及其制备方法
公开(公告)号：US09525032B2
公开(公告)日：2016-12-20
申请号：US14225999
申请日：2014-03-26
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B29/38 , H01L29/20 , C30B23/00 , C30B29/40
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译：具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。

58. 发明授权

US09437430B2 Thick pseudomorphic nitride epitaxial layers 有权
标题翻译：厚度假晶氮化物外延层
公开(公告)号：US09437430B2
公开(公告)日：2016-09-06
申请号：US12020006
申请日：2008-01-25
申请人： Leo J. Schowalter , Joseph A. Smart , James R. Grandusky , Shiwen Liu
发明人： Leo J. Schowalter , Joseph A. Smart , James R. Grandusky , Shiwen Liu
IPC分类号： H01L31/0328 , H01L21/02 , H01L33/08 , H01L33/12
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译：制造半导体结构以包括超过其预测临界厚度的应变外延层。

59. 发明授权

US08080833B2 Thick pseudomorphic nitride epitaxial layers 有权
标题翻译：厚度假晶氮化物外延层
公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
申请人： James R. Grandusky , Leo J. Schowalter , Shawn R. Gibb , Joseph A. Smart , Shiwen Liu
发明人： James R. Grandusky , Leo J. Schowalter , Shawn R. Gibb , Joseph A. Smart , Shiwen Liu
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译：在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层这与衬底晶格失配并基本上松弛。

60. 发明授权

US07776153B2 Method and apparatus for producing large, single-crystals of aluminum nitride 有权
标题翻译：用于生产大型单晶氮化铝的方法和装置
公开(公告)号：US07776153B2
公开(公告)日：2010-08-17
申请号：US11265909
申请日：2005-11-03
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo
IPC分类号： C30B21/02
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , H01L33/0075 , H01L33/025 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.
摘要翻译：具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。也可以使用该方法制造ZnO的块状晶体。

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