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52. 发明授权

US4796070A Lateral charge control semiconductor device and method of fabrication 失效
标题翻译：横向电荷控制半导体器件及其制造方法
公开(公告)号：US4796070A
公开(公告)日：1989-01-03
申请号：US3678
申请日：1987-01-15
申请人： Robert D. Black
发明人： Robert D. Black
IPC分类号： H01L29/06 , H01L29/40 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7816 , H01L29/063 , H01L29/407 , H01L29/0653
摘要： A lateral charge control semiconductor device is disclosed wherein a plurality of gate filled trenches are disposed in side-by-side relation within a partially processed semiconductor wafer to define finger portions of a drain region therebetween. A field plate is disposed on the upper surface of the finger portions and a portion of the partially processed wafer is situated beneath the finger portions. Charge control can thus be provided to all surface of the finger portion of the lateral device to maximize the amount of charge control which can be applied to the device. More particularly, the carrier concentration within the finger portion can be increased to reduce the one-resistance of the device during forward conduction, while in a reverse blocking operation, lateral charge control can be applied to couple to the electric field originating with the ionized impurities situated in the drift/drain region to increase the breakdown voltage of the device.
摘要翻译：公开了一种横向电荷控制半导体器件，其中多个栅极填充沟槽以部分处理的半导体晶片的并排关系设置，以限定其间的漏极区域的指状部分。场板设置在指状部分的上表面上，部分处理的晶片的一部分位于指状部分下方。因此，可以将充电控制提供给侧向装置的手指部分的所有表面，以最大化可施加到装置的充电控制量。更具体地，可以增加指状部分内的载流子浓度，以在正向传导期间减小器件的单电阻，而在反向阻断操作中，可以施加横向电荷控制以耦合到源自电离杂质的电场位于漂移/漏极区域以增加器件的击穿电压。

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