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51. 发明申请

US20050019436A1 Injectable capsaicin 审中-公开
标题翻译：注射辣椒素
公开(公告)号：US20050019436A1
公开(公告)日：2005-01-27
申请号：US10742621
申请日：2003-12-18
申请人： Ronald Burch , Richard Carter , Jeff Lazar
发明人： Ronald Burch , Richard Carter , Jeff Lazar
IPC分类号： A61K9/00 , A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K36/81 , A61K45/06 , A61K47/10 , C07C231/02 , C07C233/20 , A61K35/78
CPC分类号： C07C231/02 , A61K9/0019 , A61K31/05 , A61K31/16 , A61K31/165 , A61K31/5415 , A61K31/551 , A61K36/81 , A61K45/06 , A61K47/10 , A61K2300/00 , C07C233/20
摘要： The present invention provides compositions and methods for relieving pain at a site in a human or animal in need thereof by administering at a discrete site in a human or animal in need thereof a dose of capsaicin in an amount effective to denervate a discrete site without eliciting an effect outside the discrete location, the dose of capsaicin ranging from 1 μg to 3000 μg.
摘要翻译：本发明提供了通过在有需要的人或动物的离散部位施用一定剂量的有效去离胺化位点而不引发的辣椒素的剂量来减轻有需要的人或动物的部位的疼痛的组合物和方法在离散位置之外的效果，辣椒素的剂量范围从1杯至3000杯。

52. 发明授权

US06491147B1 Method for attaching a clutch pedal assembly to a vehicle for adaptation from an automatic transmission to a manual transmission application 有权
标题翻译：一种用于将离合器踏板组件附接到车辆以从自动变速器适应到手动变速器应用的方法
公开(公告)号：US06491147B1
公开(公告)日：2002-12-10
申请号：US09703969
申请日：2000-11-01
申请人： John S Kargilis , Richard Carter , Syed T Razzacki
发明人： John S Kargilis , Richard Carter , Syed T Razzacki
IPC分类号： B60K4124
CPC分类号： G05G1/30 , B60K23/02
摘要： A method for attaching a clutch pedal assembly to a vehicle with a brake pedal assembly for a manual transmission conversion from an automatic transmission application including extension of a brake support shaft laterally from an existing brake pedal assembly and through a clutch pedal supporting bushing and then further outward into engagement with a wall of the vehicle. Specifically, the outward end of the support shaft is insertably extended through a hole in the wall of the vehicle for supporting that end portion of the shaft. The method further includes utilizing a metal cutting edge or tip on the outward end of the support shaft such that rotation of the support shaft can drill the support hole in the vehicle wall.
摘要翻译：一种将离合器踏板组件附接到车辆的方法，其具有用于从自动变速器应用进行手动变速器转换的制动踏板组件，包括制动支撑轴从现有的制动踏板组件侧向延伸并且通过离合器踏板支撑衬套，然后进一步向外与车辆的墙壁接合。具体地，支撑轴的外端可插入地延伸穿过车辆的壁中的孔，用于支撑轴的该端部。该方法还包括在支撑轴的外端上利用金属切割边缘或尖端，使得支撑轴的旋转可钻出车辆壁中的支撑孔。

53. 发明授权

US5298194A Electrically conductive polymer composition 失效
标题翻译：导电聚合物组成
公开(公告)号：US5298194A
公开(公告)日：1994-03-29
申请号：US852141
申请日：1992-04-28
申请人： Richard Carter , Derrick Collett
发明人： Richard Carter , Derrick Collett
IPC分类号： C09J9/02 , B29C61/06 , B29C70/88 , C08K3/02 , C08K3/08 , C08K7/00 , C08L101/00 , C09J11/04 , H01B1/00 , H01B1/22 , H01B7/17 , H01R13/658 , H05K3/32 , H01B1/20
CPC分类号： B29C61/0625 , B29C70/882 , C08K3/08 , C08K7/00 , H01B1/22 , H01R13/6599 , B29K2995/0005 , H05K3/321
摘要： A polymer composition comprises a solid fusible particulate polymer material and a quantity of metal particles that have been blended with the particles of polymer material to render the composition electrically conductive. The composition may be consolidated by subjecting the particulate blend to heat and/or pressure. The electrically conductive polymer composition may be used to connect the electrically conductive screen (7) of a dimensionally recoverable article (6) to the electrically conductive shield (4) of a cable (1).
摘要翻译： PCT No.PCT / GB90 / 01677 Sec。 371日期：1992年4月28日 102（e）日期1992年4月28日PCT 1990年11月1日PCT PCT。出版物WO91 / 06961 日期1991年5月16日。聚合物组合物包含固体可熔颗粒聚合物材料和一定数量的已经与聚合物材料颗粒共混以使组合物导电的金属颗粒。组合物可以通过使颗粒状混合物经受加热和/或压力来固结。导电聚合物组合物可用于将尺寸可恢复制品（6）的导电屏（7）连接到电缆（1）的导电屏蔽（4）。

54. 发明授权

US08525289B2 Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization 有权
标题翻译：通过在栅极电介质稳定之前扩散栅介质盖层材料来调整复杂晶体管的阈值电压
公开(公告)号：US08525289B2
公开(公告)日：2013-09-03
申请号：US13444955
申请日：2012-04-12
申请人： Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
发明人： Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
IPC分类号： H01L23/58
CPC分类号： H01L21/823462 , H01L21/28176 , H01L21/28194 , H01L29/513 , H01L29/517
摘要： Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.
摘要翻译：复杂的栅极电极结构可以通过在进行用于稳定敏感栅极介电材料的处理之前提供包括可能扩散到栅极电介质材料中的所需物质的覆盖层来形成。以这种方式，与常规策略相比，可以基于用于阈值调节物质的降低的温度和剂量来形成复杂的高k金属栅电极结构。此外，可以为两种类型的晶体管沉积单个含金属的电极材料。

55. 发明申请

US20130223134A1 METHOD AND CIRCUIT FOR SWITCHING A MEMRISTIVE DEVICE IN AN ARRAY 有权
标题翻译：用于在阵列中切换物理装置的方法和电路
公开(公告)号：US20130223134A1
公开(公告)日：2013-08-29
申请号：US13884140
申请日：2011-01-31
申请人： Wei Yi , Muhammad Chakeel Qureshi , Frederick Perner , Richard Carter
发明人： Wei Yi , Muhammad Chakeel Qureshi , Frederick Perner , Richard Carter
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0066 , G11C2013/0078 , G11C2213/32 , G11C2213/55 , G11C2213/77 , G11C2213/81 , H01L27/101
摘要： A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.
摘要翻译：当二维阵列中的忆阻器件的切换被施加到忆阻器件的行线上时，通过二维阵列切换忆阻器件的方法来感测通过二维阵列的漏电流。根据检测到的漏电流产生泄漏补偿电流，并且还产生开关电流斜坡。泄漏补偿电流和开关电流斜坡组合形成组合开关电流，其被施加到忆阻器件的行线。当忆阻器件的电阻达到目标值时，组合的开关电流从行线移除。

56. 发明授权

US08513080B2 Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device 有权
标题翻译：减少在半导体器件中形成沟道半导体合金的工艺流程中的污染
公开(公告)号：US08513080B2
公开(公告)日：2013-08-20
申请号：US13237265
申请日：2011-09-20
申请人： Stephan Kronholz , Berthold Reimes , Richard Carter , Fernando Koch , Gisela Schammler
发明人： Stephan Kronholz , Berthold Reimes , Richard Carter , Fernando Koch , Gisela Schammler
IPC分类号： H01L21/336
CPC分类号： H01L21/28 , H01L21/8234
摘要： In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.
摘要翻译：在用于在早期制造阶段形成高k金属栅电极结构的复杂方法中，可以在选择性外延生长工艺的基础上沉积阈值调节半导体合金，而不会影响衬底的背面。因此，至少在选择性外延生长过程中，可以通过提供掩模材料和保存材料来抑制或减少背面等的任何负面影响，例如衬底和工艺工具的污染，降低表面质量等。

57. 发明授权

US08378432B2 Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy 有权
标题翻译：通过用于确定应变诱导半导体合金的偏移的偏移间隔件来保持高K栅极堆叠的完整性
公开(公告)号：US08378432B2
公开(公告)日：2013-02-19
申请号：US12748992
申请日：2010-03-29
申请人： Richard Carter , Sven Beyer , Martin Trentzsch
发明人： Richard Carter , Sven Beyer , Martin Trentzsch
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L29/66545 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/517 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7843 , H01L29/7848
摘要： In sophisticated transistor elements including a high-k gate metal stack, the integrity of the sensitive gate materials may be ensured by a spacer element that may be concurrently used as an offset spacer for defining a lateral offset of a strain-inducing semiconductor alloy. The cap material of the sophisticated gate stack may be removed without compromising integrity of the offset spacer by providing a sacrificial spacer element. Consequently, an efficient strain-inducing mechanism may be obtained in combination with the provision of a sophisticated gate stack with the required material integrity, while reducing overall process complexity compared to conventional strategies.
摘要翻译：在包括高k栅极金属堆叠的复杂晶体管元件中，敏感栅极材料的完整性可以通过间隔元件来确保，间隔元件可以同时用作用于限定应变诱导半导体合金的横向偏移的偏移间隔物。可以通过提供牺牲间隔元件而不损害偏移间隔物的完整性来移除复杂栅极堆叠的盖材料。因此，与常规策略相比，可以与提供具有所需材料完整性的复杂的栅极叠层相结合，同时降低总体工艺复杂性，可以获得有效的应变诱导机构。

58. 发明申请

US20130010521A1 SYSTEMS AND METHODS FOR ROW-WIRE VOLTAGE-LOSS COMPENSATION IN CROSSBAR ARRAYS 有权
标题翻译：跨桥阵列绕线电压损失补偿系统及方法
公开(公告)号：US20130010521A1
公开(公告)日：2013-01-10
申请号：US13383622
申请日：2010-03-25
申请人： Richard Carter
发明人： Richard Carter
IPC分类号： G11C11/21 , B82Y10/00
CPC分类号： G11C13/0007 , G11C13/0002 , G11C13/004 , G11C13/0061 , G11C2013/0054 , G11C2213/77
摘要： Embodiments of the present invention are directed systems and methods for reading the resistance states of crossbar junctions of a crossbar array. In one aspect, a system includes one or more sense amplifiers (512-514) connected to column wires of the crossbar array, a reference row wire (516) connected to each sense amp, and a wire driver (518) connected to the reference row wire and configured to drive the reference row wire. The sense amplifiers are configured so that when a selected row wire of the crossbar array is driven by a sense voltage, the column wires are held at approximately zero volts and pass currents through the column wires and sense amplifiers to the reference row wire so that resistive voltage losses along the reference row wire substantially mirror the resistive voltage losses along the selected row wire, allowing the sense amplifiers to determine the crossbar junction resistance states.
摘要翻译：本发明的实施例是用于读取交叉开关阵列的交叉开关的电阻状态的系统和方法。一方面，系统包括连接到交叉开关阵列的列线的一个或多个感测放大器（512-514），连接到每个感测放大器的参考行线（516）和连接到参考的线驱动器（518）行线并配置为驱动参考行线。感测放大器被配置为使得当交叉开关阵列的所选行线被感测电压驱动时，列线被保持在大约零伏特，并且将电流通过列线和感测放大器传递到参考行线，使得电阻沿着参考行线的电压损耗基本上反映了沿着所选行线的电阻电压损耗，允许读出放大器确定交叉点结电阻状态。

59. 发明授权

US08198192B2 Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization 有权
标题翻译：通过在栅极电介质稳定之前扩散栅介质盖层材料来调整复杂晶体管的阈值电压
公开(公告)号：US08198192B2
公开(公告)日：2012-06-12
申请号：US12775555
申请日：2010-05-07
申请人： Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
发明人： Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
IPC分类号： H01L21/4763
CPC分类号： H01L21/823462 , H01L21/28176 , H01L21/28194 , H01L29/513 , H01L29/517
摘要： Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.
摘要翻译：复杂的栅极电极结构可以通过在进行用于稳定敏感栅极介电材料的处理之前提供包括可能扩散到栅极电介质材料中的所需物质的覆盖层来形成。以这种方式，与常规策略相比，可以基于用于阈值调节物质的降低的温度和剂量来形成复杂的高k金属栅电极结构。此外，可以为两种类型的晶体管沉积单个含金属的电极材料。

60. 发明授权

US08173501B2 Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy deposition 有权
标题翻译：通过在沟道半导体合金沉积后使用掩模，在高K金属栅极晶体管中降低了STI形貌
公开(公告)号：US08173501B2
公开(公告)日：2012-05-08
申请号：US12964136
申请日：2010-12-09
申请人： Stephan Kronholz , Markus Lenski , Richard Carter
发明人： Stephan Kronholz , Markus Lenski , Richard Carter
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/3083 , H01L21/823878
摘要： In a manufacturing strategy for providing high-k metal gate electrode structures in an early manufacturing stage, process-related non-uniformities during and after the patterning of the gate electrode structures may be reduced by providing a superior surface topography. To this end, the material loss in the isolation region may generally be reduced and a more symmetrical exposure to reactive etch atmospheres during the subsequent removal of the growth mask may be accomplished by providing an additional etch mask when removing the growth mask from the active regions of N-channel transistors, after the growth of the threshold adjusting semiconductor material on the active regions of the P-channel transistors.
摘要翻译：在早期制造阶段提供高k金属栅电极结构的制造策略中，可以通过提供优异的表面形貌来减少在栅极电极结构图案化期间和之后的工艺相关的不均匀性。为此，隔离区域中的材料损耗通常可以减小，并且在随后的生长掩模去除期间对反应性蚀刻气氛的更对称的暴露可以通过在从活性区域去除生长掩模时提供附加的蚀刻掩模来实现在P沟道晶体管的有源区上阈值调节半导体材料生长之后的N沟道晶体管。

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