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    • 54. 发明申请
    • HYDRAULIC DEVICE FOR STEPLESS TRANSMISSION
    • 液压变速器液压装置
    • US20120011841A1
    • 2012-01-19
    • US13256526
    • 2009-05-13
    • Yusuke OgataKoichi TanakaNobuaki TakahashiKenji MatsuoNaofumi Nishida
    • Yusuke OgataKoichi TanakaNobuaki TakahashiKenji MatsuoNaofumi Nishida
    • F16D31/02
    • F16H61/0031F16H61/0206F16H61/66259F16H2061/66286
    • A hydraulic device includes a switch-over valve 1140 provided at a section of a sub-passage 1105 located downstream of a location where a first bypass passage 1117 is connected and located upstream of a primary regulator 1110. The switch-over valve 1140 is switched between a blocked state, where supply of hydraulic oil to a section of the sub-passage 1105 located downstream of the switch-over valve 1140 is blocked, and a communication state, where supply of hydraulic oil to the section of the sub-passage 1105 located downstream of the switch-over valve 1140 is permitted. In the hydraulic device, when the switch-over valve 1140 is switched to the communication state, as a discharge performance of a main pump 1102 increases, a first check valve 1118 closes. Supply paths for hydraulic oil discharged from the sub-pump 1103 are automatically switched in accordance with the discharge performance of the main pump 1102. When the switch-over valve 1140 is switched to the blocked state, the first check valve 1118 opens and hydraulic oil discharged from the sub-pump 1103 is introduced into a main passage 1104.
    • 液压装置包括设置在位于第一旁通通道1117连接并位于主调节器1110的上游的位置下游的子通道1105的部分处的切换阀1140.切换阀1140被切换 在向位于切换阀1140下游的子通道1105的一部分供应液压油的堵塞状态之间,以及连通状态,其中向子通道1105的部分供应液压油 位于切换阀1140的下游。 在液压装置中,当切换阀1140切换到通信状态时,随着主泵1102的排出性能的增加,第一止回阀1118关闭。 从副泵1103排出的液压油的供给路径根据主泵1102的排出性能自动切换。当切换阀1140切换到阻塞状态时,第一止回阀1118打开,液压油 从副泵1103排出的空气被引入主通路1104。
    • 55. 发明申请
    • ORGANIC ELECTRONIC ELEMENT AND ITS MANUFACTURING METHOD
    • 有机电子元件及其制造方法
    • US20110315972A1
    • 2011-12-29
    • US13254886
    • 2010-03-03
    • Nobuaki TakahashiHiroaki Yamagishi
    • Nobuaki TakahashiHiroaki Yamagishi
    • H01L51/00H01L51/56
    • H01L51/5256H01L51/0059H01L51/0084H01L51/0085H01L51/0087H01L51/0088H01L51/0097Y02E10/549Y02P70/521
    • The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of as barrier property of sealing. The organic electronic element manufacturing method is featured in that it comprises the steps of forming an organic electronic structure composed of a first electrode, at least one organic layer and a second electrode on a flexible substrate, and applying a flexible sealing substrate to the organic electronic structure, followed by heating treatment, wherein a heating temperature, at which the heating treatment is carried out, is less than Tg (a glass transition temperature) of the substrate and not less than Tg of the sealing substrate.
    • 本发明提供了一种提供低制造成本和优异的性能稳定性的有机电子元件制造方法,特别是提供低制造成本的有机电子元件制造方法,并且最小化发射不均匀性,降低发光效率和缩短寿命 作为密封阻隔性的劣化。 有机电子元件制造方法的特征在于,其包括以下步骤:在柔性基板上形成由第一电极,至少一个有机层和第二电极组成的有机电子结构,以及将柔性密封基板施加到有机电子 结构,然后进行加热处理,其中进行加热处理的加热温度小于基板的Tg(玻璃化转变温度),并且不小于密封基板的Tg。
    • 57. 发明授权
    • Method for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US07892973B2
    • 2011-02-22
    • US12605586
    • 2009-10-26
    • Masaya KawanoKoji SoejimaNobuaki Takahashi
    • Masaya KawanoKoji SoejimaNobuaki Takahashi
    • H01L21/44
    • H01L21/76898H01L23/481H01L2224/13H01L2224/13025H01L2224/14181
    • A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
    • 在不降低包括通孔的半导体器件的可靠性的情况下,抑制穿通电极的脱落。 半导体器件100包括:硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外,半导体器件100还包括突出部分146,其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触,并沿着半导体衬底101的表面朝向通孔129的内部突出。