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    • 52. 发明授权
    • Multiple-layer signal conductor
    • 多层信号导体
    • US07978029B2
    • 2011-07-12
    • US12387873
    • 2009-05-09
    • Robert O. Conn
    • Robert O. Conn
    • H01P3/08
    • H01P3/08
    • A multiple-layer signal conductor has increased surface area for mitigation of skin effect. Parallel extending elongated strips of conductive material are placed in parallel layers and are separated by a thin layer of dielectric. The elongated strips are conductively connected to one another by regularly spaced vias such that a single signal conductor with multiple conductive layers is formed. During high-speed signaling, the skin effect causes current to concentrate near the surfaces of conductors. The multiple-layer signal conductor, however, has increased surface area with respect to its total cross-sectional area. The effective cross-sectional area which is conductive during high-speed signaling is therefore increased, leading to positive effects on transmission line resistance, heating, signal integrity and signal propagation delay. The multiple-layer signal conductor sees special use on silicon circuit boards and can conduct signals at ten gigahertz or greater for distances of up to five inches without rebuffering or termination.
    • 多层信号导体具有增加的表面积,以减轻皮肤效应。 平行延伸的细长导电材料条被放置成平行的层并且被薄的电介质隔开。 细长带通过规则间隔的通孔彼此导电连接,从而形成具有多个导电层的单个信号导体。 在高速信号传递期间,皮肤效应导致电流集中在导体表面附近。 然而,多层信号导体相对于其总横截面面积增加了表面积。 因此,在高速信号传导期间导通的有效截面面积增加,导致对传输线电阻,加热,信号完整性和信号传播延迟的积极影响。 多层信号导体在硅电路板上特别使用,并且可以以10千兆赫或更大的距离传输高达五英寸的距离,而无需重新制止或终止。
    • 58. 发明授权
    • Bond and back side etchback transistor fabrication process
    • 键合和背面回蚀晶体管制造工艺
    • US07064391B1
    • 2006-06-20
    • US10824675
    • 2004-04-14
    • Robert O. Conn
    • Robert O. Conn
    • H01L21/8234H01L21/30
    • H01L27/1203H01L21/76256H01L21/84Y10S438/928
    • A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the substrate material of the device wafer. The source and drain regions of the transistor extend into the well region. After attachment of the supporting structure, the device wafer is thinned from the back side until the bottom of the well region is reached. To reduce source and drain junction capacitances, etching can continue until the source and drain regions are reached. In one embodiment, all of the well-to-substrate junction is removed in a subsequent etching step, thereby reducing or eliminating the well-to-substrate junction capacitance of the resulting transistor. Resistance between the well electrode and the transistor channel is reduced because the well contact is disposed on the back side of the device wafer directly under the transistor gate.
    • 将支撑结构晶片结合到部分或完全处理的器件晶片的上表面侧。 器件晶片包括具有延伸到器件晶片的衬底材料中的阱区的晶体管。 晶体管的源区和漏极区延伸到阱区。 在安装支撑结构之后,装置晶片从后侧变薄直到达到井区的底部。 为了减少源极和漏极结电容,可以继续蚀​​刻直到达到源极和漏极区域。 在一个实施例中,在随后的蚀刻步骤中除去所有的阱到衬底结,从而减少或消除所得晶体管的阱到衬底结电容。 阱电极和晶体管沟道之间的电阻降低,因为阱触点设置在晶体管栅极正下方的器件晶片的背面。
    • 60. 发明授权
    • Built-in self test method for measuring clock to out delays
    • 内置自检方法,用于测量时钟延迟
    • US06356514B1
    • 2002-03-12
    • US09816712
    • 2001-03-23
    • Robert W. WellsRobert D. PatrieRobert O. Conn
    • Robert W. WellsRobert D. PatrieRobert O. Conn
    • G04F800
    • G01R31/3016G01R27/04G01R31/2853G01R31/2882G01R31/31725G01R31/318516G01R31/31937
    • A circuit measures the signal propagation delay through a selected test circuit. The test circuit is provided with a feedback path so that the test circuit and feedback path together form a free-running oscillator. The oscillator then automatically provides its own test signal that includes alternating rising and falling signal transitions on the test-circuit input node. These signal transitions are counted over a predetermined time period to establish the period of the oscillator. The period of the oscillator is then related to the average signal propagation delay through the test circuit. The invention can be applied to synchronous components that might fail to oscillate by connecting the asynchronous set or clear terminal to the output terminal so that the oscillator oscillates at a frequency determined by the clock-to-out delay of those components. The configuration can thus be used to characterize synchronous and asynchronous components to provide data for predicting the timing behavior of circuits that include those or similar components.
    • 电路通过选定的测试电路测量信号传播延迟。 测试电路设置有反馈路径,使得测试电路和反馈路径一起形成自由振荡的振荡器。 然后振荡器自动提供自己的测试信号,包括在测试电路输入节点上交替的上升和下降信号转换。 这些信号转换在预定的时间周期内进行计数,以建立振荡器的周期。 然后振荡器的周期与通过测试电路的平均信号传播延迟相关。 本发明可以应用于通过将异步设置或清除端子连接到输出端子而可能无法振荡的同步部件,使得振荡器以由那些部件的时钟到输出延迟确定的频率振荡。 因此,该配置可以用于表征同步和异步组件,以提供用于预测包括那些或类似组件的电路的定时行为的数据。