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51. 发明授权

US5620557A Sapphireless group III nitride semiconductor and method for making same 失效
标题翻译：无蓝宝石III族氮化物半导体及其制造方法
公开(公告)号：US5620557A
公开(公告)日：1997-04-15
申请号：US494846
申请日：1995-06-26
申请人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
发明人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
IPC分类号： C30B25/02 , H01L33/32 , H01L21/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L33/007 , H01L33/0075 , Y10S117/915
摘要： A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
摘要翻译：一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层（3a，3b）的方法，包括x = 0，y = 0和x = y = 0，以及利用半导体层（3a，3b）之一作为基板（3）的LED（10）包括在蓝宝石基板（1）的每一侧上形成两个氧化锌（ZnO）中间层（2a，2b）的步骤，形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层（3a，3b），包括x = 0，y = 0和x = y = 0，各层叠在每个中间ZnO层，2b），并且通过仅用于ZnO层（2a，2b）的蚀刻液蚀刻从中分离出中间ZnO层（2a，2b）和蓝宝石衬底（1）。如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极（6,7）的相对侧上的n和p个MOVPE层（4,5），以形成在450nm区域中发射的LED，并且具有器件电阻低。

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