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51. 发明授权

US08853521B2 Truncated pyramid structures for see-through solar cells 有权
标题翻译：用于透明太阳能电池的截断金字塔结构
公开(公告)号：US08853521B2
公开(公告)日：2014-10-07
申请号：US13193302
申请日：2011-07-28
申请人： Mehrdad Moslehi , David Xuan-Qi Wang
发明人： Mehrdad Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/18 , H01L31/0352 , H01L31/04
CPC分类号： H01L31/1804 , H01L31/0352 , H01L31/035281 , H01L31/04 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.
摘要翻译：本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。基板包括多个单元电池。每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

52. 发明授权

US06573156B1 Low defect method for die singulation and for structural support for handling thin film devices 失效
标题翻译：用于模切和用于处理薄膜器件的结构支持的低缺陷方法
公开(公告)号：US06573156B1
公开(公告)日：2003-06-03
申请号：US10020050
申请日：2001-12-13
申请人： David Xuan-Qi Wang , Jason Yao
发明人： David Xuan-Qi Wang , Jason Yao
IPC分类号： H01L2146
CPC分类号： B81C1/00873 , B81C1/00896 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： In certain implementations, a method for chip singulation is provided including etching a frontside dicing trench from a front side of a wafer, forming a temporary holding material, in the frontside dicing trench, etching a backside dicing trench from a back side of the wafer along the frontside dicing trench, removing the temporary holding material and releasing the chip from the wafer or an adjacent chip. Certain implementations may include etching through surface deposited layers on the front side of the wafer. Certain implementations may further include completely filling the frontside dicing trench with the temporary holding material and etching the backside dicing trench to the temporary holding material that is in the frontside dicing trench, such that removing the temporary holding material self-dices the wafer. Certain implementations may include surrounding MEMS structures with the temporary holding material so as to hold the structures during etching of the back side of the wafer. Some implementations may include providing a carrier wafer over the front side of the wafer. In certain implementations, the temporary holding material may be parylene, deposited by vapor deposition. In such implementations, the parylene may be removed by dry etching with an oxide plasma etch.
摘要翻译：在某些实施方式中，提供了一种用于芯片单片化的方法，包括在前面切割沟槽中从晶片的正面蚀刻前侧切割沟槽，形成临时保持材料，从晶片背面蚀刻背面切割沟槽前侧切割槽，去除临时保持材料并从晶片或相邻芯片释放芯片。某些实施方式可以包括通过在晶片前侧上的表面沉积层进行蚀刻。某些实现可以进一步包括用临时保持材料完全填充前侧切割沟槽，并且将背面切割沟槽蚀刻到位于前侧切割沟槽中的临时保持材料，使得移除临时保持材料自身切割晶片。某些实现可以包括具有临时保持材料的周围的MEMS结构，以便在蚀刻晶片背面期间保持结构。一些实现可以包括在晶片的前侧上提供载体晶片。在某些实施方案中，临时保持材料可以是聚对二甲苯，通过气相沉积沉积。在这种实施方案中，聚对二甲苯可以通过用氧化物等离子体蚀刻的干法蚀刻去除。

53. 发明授权

US08278192B2 Trench formation method for releasing a thin-film substrate from a reusable semiconductor template 有权
标题翻译：用于从可重复使用的半导体模板中释放薄膜基板的沟槽形成方法
公开(公告)号：US08278192B2
公开(公告)日：2012-10-02
申请号：US12702187
申请日：2010-02-08
申请人： David Xuan-Qi Wang , Mehrdad Moslehi
发明人： David Xuan-Qi Wang , Mehrdad Moslehi
IPC分类号： H01L21/46 , H01L21/76
CPC分类号： H01L31/035281 , H01L21/76229 , H01L21/76232 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.
摘要翻译：提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。然后从可重复使用的半导体模板中释放薄膜半导体衬底。

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