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    • 59. 发明授权
    • Display device
    • 显示设备
    • US06853371B2
    • 2005-02-08
    • US09953237
    • 2001-09-17
    • Yasushi MiyajimaMichiru Senda
    • Yasushi MiyajimaMichiru Senda
    • G02F1/133G09G3/20G09G3/36G09G5/00
    • G09G3/3659G09G3/2011G09G3/3614G09G3/3648G09G2300/0408G09G2300/0809G09G2300/0814G09G2300/0842G09G2300/0857G09G2330/021G09G2340/0428
    • Within one pixel element 200, two display circuits corresponding to the analog display mode and the digital display mode are disposed such that they are adjacent to each other. One of these two display circuits can be selected through the circuit selection circuits 40 or 43. Since the high voltage power line 150 of the retaining circuit 110, which is used under the digital display mode, also performs as the signal selection line 88, it is possible to have the high density integration of the pixel element 200. Also, the bias voltage Vsc supplied through the selection storage capacitor line 81 is same as the signal A. Therefore, the storage capacitor line 81 is connected to the drain of the TFT 122 of the signal selection circuit 120 so that the signal line 82 for supplying the signal A can be omitted. Thus, the high-density integration of the pixel element 200 can be achieved.
    • 在一个像素元件200内,对应于模拟显示模式和数字显示模式的两个显示电路被布置成彼此相邻。 可以通过电路选择电路40或43来选择这两个显示电路中的一个。由于在数字显示模式下使用的保持电路110的高电压电力线150也作为信号选择线88执行 可以具有像素元件200的高密度积分。而且,通过选择保持电容线81提供的偏置电压Vsc与信号A相同。因此,保持电容线81连接到TFT的漏极 122,从而可以省略用于提供信号A的信号线82。 因此,可以实现像素元件200的高密度集成。
    • 60. 发明授权
    • Active matrix display device with storage capacitor for each pixel
    • 主动矩阵显示装置,每个像素具有存储电容
    • US06812912B2
    • 2004-11-02
    • US10113693
    • 2002-03-28
    • Yasushi MiyajimaRyoichi YokoyamaTsutomu YamadaKiyoshi Yoneda
    • Yasushi MiyajimaRyoichi YokoyamaTsutomu YamadaKiyoshi Yoneda
    • G09G336
    • G02F1/136213
    • An active matrix display device employing a top gate type TFT structure has a storage capacitor Csc and a liquid crystal capacitor Clc in each pixel of a pixel section, a first electrode of the storage capacitor Csc served by a p-Si active layer of the TFT, and a second electrode formed to at least partly overlap the active layer, with an insulating layer between the active layer and the second electrode below it. When a driver section is to be built in, the driver section TFT is the same top gate type as the pixel section TFT, and an active layer is made of the same material as the active layer and has a conductive layer which is made of the same material as the second electrode with the insulating layer held between the active layer and the conductive layer below it. The pixel section can form the storage capacitor while preventing lowering of the aperture ratio. Because conditions for the polycrystalization annealing of the active layer are equal for the pixel section TFT and the driver section TFT, TFTs with the same properties can be obtained.
    • 使用顶栅型TFT结构的有源矩阵显示装置在像素部的每个像素中具有存储电容器Csc和液晶电容器Clc,由TFT的p-Si有源层服务的存储电容器Csc的第一电极 以及形成为至少部分地与有源层重叠的第二电极,在其之间的有源层和第二电极之间具有绝缘层。 当要构建驱动器部分时,驱动器部分TFT与像素部分TFT相同的顶栅型,并且有源层由与有源层相同的材料制成并具有导电层,该导电层由 与第二电极相同的材料,其绝缘层保持在有源层和其下面的导电层之间。 像素部可以形成保持电容,同时防止开口率的降低。 由于有源层的多晶退火条件对于像素部分TFT和驱动部分TFT是相同的,因此可获得具有相同特性的TFT。