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51. 发明申请

US20070253123A1 Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same 失效
标题翻译：读取具有氮化硬偏置层的CPP型的传感器及其制造方法
公开(公告)号：US20070253123A1
公开(公告)日：2007-11-01
申请号：US11784733
申请日：2007-04-09
申请人： James Freitag , Mustafa Pinarbasi
发明人： James Freitag , Mustafa Pinarbasi
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , G11B5/3163 , G11B5/3909 , G11B2005/3996
摘要： A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the read sensor; insulator layers formed in side regions adjacent the central region; seed layer structures formed over the insulator layers in the side regions; and hard bias layers formed over the seed layer structures in the side regions. The hard bias layers are made of a nitrogenated cobalt-based alloy, such as nitrogenated cobalt-platinum (CoPt). Suitable if not exemplary coercivity and squareness properties are exhibited using the nitrogenated cobalt-based alloy. The hard bias layers may be formed by performing an ion beam deposition of cobalt-based materials using a sputtering gas (e.g. xenon) and nitrogen as a reactive gas.
摘要翻译：电流垂直平面（CPP）类型的读取传感器包括形成在用作读取传感器的引线的第一和第二屏蔽层之间的中心区域中的传感器堆叠结构; 形成在邻近中心区域的侧面区域中的绝缘体层; 种子层结构形成在侧面区域上的绝缘体层上; 以及在侧面区域上形成在种子层结构上的硬偏压层。硬偏压层由氮化钴基合金如氮化钴 - 铂（CoPt）制成。使用含氮钴基合金表现出适当的矫顽力和矩形特性。可以通过使用溅射气体（例如氙）和氮作为反应气体进行钴基材料的离子束沉积来形成硬偏置层。

52. 发明申请

US20070109692A1 Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor 失效
标题翻译：斜角蚀刻底层，用于改进磁阻传感器中的交换偏置结构
公开(公告)号：US20070109692A1
公开(公告)日：2007-05-17
申请号：US11283033
申请日：2005-11-17
申请人： Matthew Carey , Jeffrey Childress , James Freitag , Stefan Maat , Mustafa Pinarbasi
发明人： Matthew Carey , Jeffrey Childress , James Freitag , Stefan Maat , Mustafa Pinarbasi
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.
摘要翻译：具有改善的钉扎场强的磁阻传感器。传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。然后将AFM层沉积在磁性层上。然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

53. 发明申请

US20070035894A1 Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement 有权
标题翻译：具有用于钉扎改善的各向异性固定层的磁阻传感器
公开(公告)号：US20070035894A1
公开(公告)日：2007-02-15
申请号：US11200796
申请日：2005-08-09
申请人： James Freitag , Mustafa Pinarbasi
发明人： James Freitag , Mustafa Pinarbasi
IPC分类号： G11B5/33
CPC分类号： G01R33/093
摘要： A magnetoresistive sensor having a magnetically anisotropic pinned layer structure. The pinned layer structure is formed over a seed layer having a surface that has been treated to texture the surface of the seed layer with an anisotropic roughness. This anisotropic roughness induces the magnetic anisotropy in the pinned layers. The treated seed layers also allow the pinned layer to maintain robust pinning without the need for a thick AFM layer, thereby reducing gap size.
摘要翻译：具有磁各向异性固定层结构的磁阻传感器。钉扎层结构形成在具有已经被处理以用各向异性粗糙度纹理种子层的表面的表面的籽晶层上。这种各向异性的粗糙度引起钉扎层中的磁各向异性。经处理的种子层还允许钉扎层保持坚固的钉扎，而不需要厚的AFM层，从而减小间隙尺寸。

54. 发明申请

US20060158790A1 Magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability 审中-公开
标题翻译：磁阻传感器具有新颖的结构结构，可改善轨道宽度的定义和固定层的稳定性
公开(公告)号：US20060158790A1
公开(公告)日：2006-07-20
申请号：US11035771
申请日：2005-01-14
申请人： James Freitag , Wipul Jayasekara , Mustafa Pinarbasi
发明人： James Freitag , Wipul Jayasekara , Mustafa Pinarbasi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , G11B2005/0016 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having improved pinned layer stability at small track widths. The sensor has substantially vertical side walls that define the track width of the sensor. The free layer terminates at the substantially vertical side walls, but the pinned layer structure or a portion thereof extends beyond the track width region into the field. The extended pinned layer structure provides improved resistance to amplitude flipping, while allowing the track width to remain small.
摘要翻译：一种磁阻传感器，在小轨道宽度下具有改进的固定层稳定性。该传感器具有限定传感器的轨道宽度的基本上垂直的侧壁。自由层在基本上垂直的侧壁处终止，但被钉扎层结构或其一部分延伸超过轨道宽度区域进入场。扩展的钉扎层结构提供改善的振幅翻转阻力，同时允许轨道宽度保持较小。

55. 发明申请

US20050122635A1 Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer 有权
标题翻译：具有高矫顽力反平行（AP）钉扎层的自固定自旋阀传感器
公开(公告)号：US20050122635A1
公开(公告)日：2005-06-09
申请号：US10727882
申请日：2003-12-03
申请人： James Freitag , Mustafa Pinarbasi
发明人： James Freitag , Mustafa Pinarbasi
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetic head assembly has a read that includes a sensor wherein the sensor includes a self-pinned antiparallel (AP) pinned layer structure, a ferromagnetic free layer structure that has a magnetic moment that is free to rotate in response to signal fields and a spacer layer which is located between the free layer and AP pinned layer structures. The self-pinned AP pinned layer structure includes first and second antiparallel (AP) pinned layers, an antiparallel coupling (APC) layer located between and interfacing the first and second AP pinned layers wherein the second AP pinned layer is located between the first AP pinned layer and the spacer layer. The first AP pinned layer is composed of cobalt platinum chromium (CoPtCr).
摘要翻译：磁头组件具有包括传感器的读取器，其中传感器包括自固定反平行（AP）钉扎层结构，铁磁自由层结构具有响应于信号场自由旋转的磁矩和间隔物位于自由层和AP钉扎层结构之间的层。自固定AP钉扎层结构包括第一和第二反平行（AP）钉扎层，位于第一和第二AP钉扎层之间并且连接第一和第二AP钉扎层的反平行耦合（APC）层，其中第二AP钉扎层位于第一AP钉扎层和间隔层。第一个AP钉扎层由钴铂铬（CoPtCr）组成。

56. 发明申请

US20050106330A1 Spin valve properties 失效
标题翻译：旋转阀属性
公开(公告)号：US20050106330A1
公开(公告)日：2005-05-19
申请号：US10717128
申请日：2003-11-19
申请人： James Freitag , Mustafa Pinarbasi
发明人： James Freitag , Mustafa Pinarbasi
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , G11B5/82 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3906 , G11B2005/3996 , H01F10/3272 , H01F10/3286 , H01F41/302
摘要： A method for forming a magnetic head having an improved PtMn layer, including forming a PtMn layer by ion beam deposition, forming an antiparallel (AP) pinned layer structure above the PtMn layer, and forming a free layer above the AP pinned layer structure. The method provides a spin valve structure having improved soft magnetic properties of the free layer as well as increases the dR/R of spin valve structures in which implemented.
摘要翻译：一种用于形成具有改进的PtMn层的磁头的方法，包括通过离子束沉积形成PtMn层，在PtMn层上方形成反平行（AP）钉扎层结构，并在AP钉扎层结构之上形成自由层。该方法提供了具有改善的自由层的软磁性质的自旋阀结构，并且增加了实现的自旋阀结构的dR / R。

57. 发明申请

US20050066514A1 Method for improving hard bias properties of layers in a magnetoresistive sensor 有权
标题翻译：改善磁阻传感器层的硬偏置特性的方法
公开(公告)号：US20050066514A1
公开(公告)日：2005-03-31
申请号：US10675126
申请日：2003-09-30
申请人： Phong Chau , James Freitag , Mustafa Pinarbasi , Hua Zeng , Howard Zolla
发明人： Phong Chau , James Freitag , Mustafa Pinarbasi , Hua Zeng , Howard Zolla
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49004 , Y10T29/49007 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
摘要翻译：公开了一种用于改善磁阻传感器的层的硬偏置特性的方法。使用包含至少第一层硅的种子层结构和包含铬或铬钼的第二层来改善硬偏置层的性质。此外，当种子层结构包括一层钽时，实现了益处。

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