专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20070163975A1 Hockey stick rack 失效
标题翻译：曲棍球架
公开(公告)号：US20070163975A1
公开(公告)日：2007-07-19
申请号：US11334298
申请日：2006-01-19
申请人： John Holland
发明人： John Holland
IPC分类号： A47F7/00
CPC分类号： A63B71/0036 , A63B71/0045 , A63B2102/22 , A63B2102/24
摘要： The invention is a rack holding hockey sticks and other sporting equipment. The base is comprised of a member to which is attached at right angles another two members on opposite sides and a post rising vertically from the point of attachment. A second vertical member slides over the first vertical member. Near the top of the second vertical member are attached two members. Attached to these two members are two additional members at right angles. To each of those members are attached a plurality of other members at right angles projecting outwards. There are two additional members attached lower on the second vertical member. Each of these members have an additional member attached at right angles and a plurality of members attached to such member at right angles, which members extend inwards towards the vertical member.
摘要翻译：本发明是一种搁置曲棍球棒和其他运动器材的机架。底座由一个构件组成，在该构件上以直角连接两个相对侧的两个构件，以及从安装点垂直上升的柱。第二垂直构件在第一垂直构件上滑动。靠近第二垂直构件的顶部附有两个构件。这两名成员的附属成员是两个成员。对于这些构件中的每一个，以向外突出的直角附接多个其它构件。在第二垂直构件上附加有两个附加构件。这些构件中的每一个具有直角连接的附加构件，并且多个构件以直角附接到该构件，该构件向着垂直构件向内延伸。

52. 发明申请

US20060266735A1 Plasma generation and control using dual frequency RF signals 有权
公开(公告)号：US20060266735A1
公开(公告)日：2006-11-30
申请号：US11416468
申请日：2006-05-02
申请人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
发明人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32431
摘要： A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

53. 发明授权

US07015017B2 Process and agent for instabilizing viral quasi-species-distributions avoiding resistance phenomena 失效
公开(公告)号：US07015017B2
公开(公告)日：2006-03-21
申请号：US10032897
申请日：2001-10-25
申请人： Manfred Eigen , Andreas Schwienhorst , Christof Biebricher , Björn Lindemann , Esteban Domingo , John Holland , Karsten Henco
发明人： Manfred Eigen , Andreas Schwienhorst , Christof Biebricher , Björn Lindemann , Esteban Domingo , John Holland , Karsten Henco
IPC分类号： C12Q1/68 , C12P19/34 , C07H21/02 , C07H21/04
CPC分类号： C12N15/11 , A61K48/00 , A61K2039/525 , C12N7/00 , C12N15/00 , C12N2740/16011 , C12N2795/18111 , Y10T436/143333
摘要： A process for instabilizing viral quasi-species-distributions under avoidance of resistance phenomena by replication of the nucleic acids of the viruses present in the quasi-species-distribution by of a defective replication system, a) whereby the defective replication system has a rate of misincorporation for nucleotides above the rate of misincorporation of the viral wild-type-replication system and, whereby the viruses are replicated by the replication system having the higher rate of misincorporation at least as effectively as it is done by the replication system of the wild-type virus, b) and/or negative influence of the replication of the consensus-sequence (nucleic acid sequence of the wild-type virus) in relation to other replicatable nucleic acids.

54. 发明申请

US20060000805A1 Method and apparatus for stable plasma processing 有权
公开(公告)号：US20060000805A1
公开(公告)日：2006-01-05
申请号：US10880754
申请日：2004-06-30
申请人： Valentin Todorow , John Holland , Michael Willwerth
发明人： Valentin Todorow , John Holland , Michael Willwerth
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： C23F4/00 , C23F1/08 , H01J37/321 , H01J37/32633 , H01L21/67069
摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

55. 发明申请

US20050128882A1 Snapping and hinging arrangements, watches and associated methods 有权
公开(公告)号：US20050128882A1
公开(公告)日：2005-06-16
申请号：US11040752
申请日：2005-01-21
申请人： Stephanie Kraus , Chris Heatherly , Randal Ouye , Julie Nishioka , John Holland , Jeffrey Sand
发明人： Stephanie Kraus , Chris Heatherly , Randal Ouye , Julie Nishioka , John Holland , Jeffrey Sand
IPC分类号： A44B99/00 , A44C5/14 , A44C5/20 , G04B37/00 , G04B37/14 , G04B19/04 , G04B19/06
CPC分类号： G04B37/1486 , A44C5/14 , A44C5/2071 , A44D2203/00 , Y10T24/32 , Y10T24/4782 , Y10T29/49609 , Y10T29/49798
摘要： A magnet assembly connectable to a metal assembly in an engaging fashion, a metal assembly connectable with the magnet assembly in an engaging fashion and a snapping mechanism comprising the magnet assembly and the metal assembly are disclosed, to be used with a strap and a watch case. A leaf spring element and a base element to be used with a watch case are also disclosed, together with manufacturing processes and a system and method to teach the concept of time.

56. 发明授权

US06691946B2 Medical bowl for coiled devices 有权
标题翻译：医疗碗盘绕设备
公开(公告)号：US06691946B2
公开(公告)日：2004-02-17
申请号：US10062692
申请日：2002-01-30
申请人： Bruce Dannecker , Doug Cundieff , John Holland
发明人： Bruce Dannecker , Doug Cundieff , John Holland
IPC分类号： B65H7516
CPC分类号： A61M25/002 , A61B50/30 , A61B2050/3007
摘要： The invention described herein relates to a medical bowl adapted to accommodate and retain a coiled medical device comprising: generally smooth cylindrical sidewall portion; a generally planar circular bottom portion; and a plurality of retention tabs extending upward from said bottom portion and positioned thereon to provide a space between said sidewall portion and said retention tabs. The retention tabs are structured and positioned to facilitate the handling and grippability of a coiled device placed within the bowl.
摘要翻译：本文所述的本发明涉及一种适于容纳和保持卷绕的医疗装置的医用碗，包括：大致光滑的圆柱形侧壁部分; 大致平坦的圆形底部; 以及从所述底部部分向上延伸并定位在其上以在所述侧壁部分和所述保持突片之间提供空间的多个保持突片。保持突片被构造和定位以便于放置在碗内的盘绕装置的处理和抓握性。

57. 发明授权

US06635578B1 Method of operating a dual chamber reactor with neutral density decoupled from ion density 失效
标题翻译：操作具有从离子密度分离的中性密度的双室反应器的方法
公开(公告)号：US06635578B1
公开(公告)日：2003-10-21
申请号：US09550646
申请日：2000-04-14
申请人： Songlin Xu , John Holland , Xueyu Qian
发明人： Songlin Xu , John Holland , Xueyu Qian
IPC分类号： H01L21302
CPC分类号： H01J37/32009 , H01J37/32321 , H01J37/32422 , H01J37/32871 , H01L21/31116
摘要： A method for operating a plasma reactor having a secondary chamber that is a neutral species source for the main chamber. The method in one embodiment of the invention consists of determining the desired increase in main chamber neutral particle density to be contributed by the secondary chamber for a given main chamber ion density range, and then to maintain the main chamber source power below a level beneath which the secondary chamber is capable of supplying the desired main chamber neutral density contribution.
摘要翻译：一种用于操作具有作为主室的中性物质源的二次室的等离子体反应器的方法。本发明的一个实施方案中的方法包括确定在给定的主室离子密度范围内由二级室贡献的主室中性粒子浓度的期望增加，然后将主室源功率维持在其下面的水平以下次级室能够提供所需的主室中性密度贡献。

58. 发明授权

US06617794B2 Method for controlling etch uniformity 失效
公开(公告)号：US06617794B2
公开(公告)日：2003-09-09
申请号：US10016971
申请日：2001-12-14
申请人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
发明人： Michael Barnes , John Holland , Valentin Todorov , Mohit Jain , Alexander Paterson
IPC分类号： H01J724
CPC分类号： H01J37/32174 , H01J37/321
摘要： The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.

59. 发明授权

US06423516B1 Process and agent for instabilizing viral quasi-species-distributions avoiding resistance phenomena 失效
标题翻译：不稳定病毒准物种分布的过程和试剂，避免了阻力现象
公开(公告)号：US06423516B1
公开(公告)日：2002-07-23
申请号：US08362604
申请日：1996-03-22
申请人： Manfred Eigen , Andreas Schwienhorst , Christof Biebricher , Björn Lindemann , Esteban Domingo , John Holland , Karsten Henco
发明人： Manfred Eigen , Andreas Schwienhorst , Christof Biebricher , Björn Lindemann , Esteban Domingo , John Holland , Karsten Henco
IPC分类号： C12P1934
CPC分类号： C12N15/11 , A61K48/00 , A61K2039/525 , C12N7/00 , C12N15/00 , C12N2740/16011 , C12N2795/18111 , Y10T436/143333
摘要： A process for instabilizing viral quasi-species-distributions under avoidance of resistance phenomena by replication of the nucleic acids of the viruses present in the quasi-species-distribution by of a defective replication system, a) whereby the defective replication system has a rate of misincorporation for nucleotides above the rate of misincorporation of the viral wild-type-replication system and, whereby the viruses are replicated by the replication system having the higher rate of misincorporation at least as effectively as it is done by the replication system of the wild-type virus, b) and/or negative influence of the replication of the consensus-sequence (nucleic acid sequence of the wild-type virus) in relation to other replicatable nucleic acids.
摘要翻译：一种通过利用有缺陷的复制系统复制存在于准物种分布中的病毒的核酸来避免抗性现象来阻止病毒准物种分布的方法，其中缺陷复制系统的速率为对于高于病毒野生型复制系统错配的速率的核苷酸的错配，并且其中病毒由具有较高错配率的复制系统复制至少与野生型复制系统的复制系统一样有效地复制，类型病毒，b）和/或共有序列（野生型病毒的核酸序列）相对于其他可重复核酸的复制的负面影响。

60. 发明授权

US06399507B1 Stable plasma process for etching of films 失效
标题翻译：用于蚀刻膜的稳定等离子体工艺
公开(公告)号：US06399507B1
公开(公告)日：2002-06-04
申请号：US09401603
申请日：1999-09-22
申请人： Padmapani Nallan , John Holland , Valentin Todorov , Thorsten Lill
发明人： Padmapani Nallan , John Holland , Valentin Todorov , Thorsten Lill
IPC分类号： H01L21302
CPC分类号： H01J37/321
摘要： In accordance with the present invention, process parameters are controlled to provide a stable etch plasma. We have discovered that it is possible to operate a stable plasma with a portion of the power deposited to the plasma being a capacitive contribution and a portion of the power deposited being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation [∂Pcap/∂PRF] is greater than 0. In the second region, plasma stability is controlled so that [∂Pcap/∂PRF] is less than 0 and so that Pcap
摘要翻译：根据本发明，控制工艺参数以提供稳定的蚀刻等离子体。我们已经发现，可以操作稳定的等离子体，其中一部分功率沉积到等离子体是电容性的，并且所沉积的功率的一部分是感应贡献。特别地，可以在两个工艺区域内获得稳定的等离子体。在第一区域中，电容性功率对施加到用于等离子体产生的电感耦合源的功率的梯度大于0.在第二区域中，等离子体稳定性受到控制，使得[∂Pcap/ ∠PRF]小于0，因此Pcap << PRF。通常，Pcap的幅度小于PRF大小的10％。此外，在具有双功率控制的等离子体处理装置中，在给予对等离子体发生源的功率施加时，通过增加蚀刻处理室中的压力来延长等离子体的稳定性。这使得能够使用较低功率应用进行等离子体生成的蚀刻工艺。将稳定的等离子体操作状态覆盖在其它工艺参数上以获得所需的蚀刻结果，以提供可靠的制造工艺。在稳定等离子体区域中的蚀刻工艺的操作使得能够使用定时蚀刻终点。例如，在蚀刻含硅层期间，可以使用蚀刻剂等离子体，其在蚀刻工艺的第一定时蚀刻部分期间相对于相邻层提供快速蚀刻和蚀刻选择性，以及在蚀刻过程中的不同蚀刻剂等离子体最终排放物监测到底层基板界面的蚀刻。此外，稳定的等离子体以基本上相同的速率帮助蚀刻掺杂和未掺杂的硅和多晶硅衬底，同时提供干净的蚀刻工艺。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式