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51. 发明申请

US20070015293A1 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
标题翻译：在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件
公开(公告)号：US20070015293A1
公开(公告)日：2007-01-18
申请号：US11181176
申请日：2005-07-14
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有SyAP构造，其具有外部被钉扎层，Ru结合层和由CoFe X B Y / CoFe Z组成的内部钉扎层其中x = 0〜70原子％，y = 0〜30原子％，z = 0〜100原子％。通过用氧等离子体处理CoFe z z层来形成OSL。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。结果，Hin值可以减少1/3至约32Oe。对于TMR读取头应用，已经实现了25％的dR / R和3欧姆 - 厘米2的RA。

52. 发明申请

US20060061915A1 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US20060061915A1
公开(公告)日：2006-03-23
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

53. 发明授权

US08472151B2 TMR device with low magnetorestriction free layer 有权
标题翻译：具有低磁阻自由层的TMR器件
公开(公告)号：US08472151B2
公开(公告)日：2013-06-25
申请号：US13444497
申请日：2012-04-11
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA
摘要翻译：通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoB（λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。

54. 发明授权

US08339754B2 TMR or CPP structure with improved exchange properties 有权
标题翻译：具有改进的交换性能的TMR或CPP结构
公开(公告)号：US08339754B2
公开(公告)日：2012-12-25
申请号：US13135277
申请日：2011-06-30
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
摘要翻译：在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1至5埃厚的非磁性层。优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。可选地，插入层可以形成在AP2钉扎层内。插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

55. 发明授权

US08164862B2 Seed layer for TMR or CPP-GMR sensor 有权
标题翻译：种子层用于TMR或CPP-GMR传感器
公开(公告)号：US08164862B2
公开(公告)日：2012-04-24
申请号：US12080277
申请日：2008-04-02
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B5/3983 , H01F10/30 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A composite seed layer that reduces the shield to shield distance in a read head while improving Hex (exchange coupling field) and Hex/Hc (Hc=coercivity) is disclosed and has a SM/A/SM/B configuration in which the SM layers are soft magnetic layers, the A (amorphous) layer is made of at least one of Co, Fe, Ni, and includes one or more amorphous elements, and the B layer is a buffer layer that contacts the AFM (anti-ferromagnetic) layer in the spin valve. The SM/A/SM stack together with the S1 (bottom) shield forms an effective shield such that the buffer layer serves as the effective seed layer while maintaining a blocking temperature of 260° C. in the AFM layer. The lower SM layer may be omitted. Examples of the amorphous layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr while the buffer layer may be Cu, Ru, Cr, Al, or NiFeCr.
摘要翻译：公开了一种复合种子层，其在改进Hex（交换耦合场）和Hex / Hc（Hc =矫顽力）的同时减小了读头中的屏蔽距离，并具有SM / A / SM / B配置，其中SM层是软磁性层，A（非晶）层由Co，Fe，Ni中的至少一种构成，并且包括一个或多个非晶元素，并且B层是与AFM（反铁磁）层接触的缓冲层在自旋阀中。 SM / A / SM堆叠与S1（底部）屏蔽件形成有效屏蔽，使得缓冲层用作有效种子层，同时在AFM层中保持260℃的阻挡温度。可以省略下层SM层。非晶层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr，而缓冲层可以是Cu，Ru，Cr，Al或NiFeCr。

56. 发明授权

US08059374B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08059374B2
公开(公告)日：2011-11-15
申请号：US12319972
申请日：2009-01-14
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127 , H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

57. 发明申请

US20110268992A1 TMR or CPP structure with improved exchange properties 有权
公开(公告)号：US20110268992A1
公开(公告)日：2011-11-03
申请号：US13135277
申请日：2011-06-30
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39 , B05D5/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.

58. 发明授权

US07861401B2 Method of forming a high performance tunneling magnetoresistive (TMR) element 有权
标题翻译：形成高性能隧道磁阻（TMR）元件的方法
公开(公告)号：US07861401B2
公开(公告)日：2011-01-04
申请号：US12321883
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。因此，Hin值可以减少1/3至约32 Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

59. 发明授权

US07829963B2 TMR device with Hf based seed layer 有权
标题翻译：具有Hf基种子层的TMR器件
公开(公告)号：US07829963B2
公开(公告)日：2010-11-09
申请号：US12319734
申请日：2009-01-12
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： H01L29/82
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10T428/1291
摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.
摘要翻译：公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。

60. 发明申请

US20090269617A1 Ultra low RA sensors 有权
标题翻译：超低RA传感器
公开(公告)号：US20090269617A1
公开(公告)日：2009-10-29
申请号：US12150191
申请日：2008-04-25
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/39 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08 , Y10T428/1114
摘要： A high performance TMR sensor with a spacer including at least one Cu layer and one or more MgO layers is disclosed. Optionally, Cu may be replaced by one of Au, Zn, Ru, or Al. In addition, there may be a dopant such as Zn, Mn, Al, Cu, Ni, Cd, Cr, Ti, Zr, Hf, Ru, Mo, Nb, Co, or Fe in the MgO layer. In an alternative embodiment, the MgO layer may be replaced by other low band gap insulating or semiconductor materials. A resonant tunneling mechanism is believed to be responsible for achieving an ultra-low RA of
摘要翻译：公开了具有包括至少一个Cu层和一个或多个MgO层的间隔物的高性能TMR传感器。任选地，Cu可以被Au，Zn，Ru或Al中的一种取代。此外，在MgO层中可以存在Zn，Mn，Al，Cu，Ni，Cd，Cr，Ti，Zr，Hf，Ru，Mo，Nb，Co或Fe等掺杂剂。在替代实施例中，MgO层可以由其他低带隙绝缘或半导体材料代替。据信谐振隧穿机构负责实现<0.4兆欧姆 - 厘米2的超低RA与14％的MR，低磁致伸缩和约20Oe的低Hin值的组合。在Cu / MgO / Cu，MgO / Cu / MgO，Cu / MgO，MgO / Cu，Cu / MgO / Cu / MgO等的间隔构造中，Cu层的厚度为0.1〜10埃，MgO的厚度为5〜 MgO / Cu和（Cu / MgO）n / Cu多层。

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