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51. 发明申请

US20070297313A1 OPTICAL PICKUP 审中-公开
公开(公告)号：US20070297313A1
公开(公告)日：2007-12-27
申请号：US11764816
申请日：2007-06-19
申请人： Nobuhiro Konuma , Takeshi Nakao
发明人： Nobuhiro Konuma , Takeshi Nakao
IPC分类号： G11B7/00
CPC分类号： G11B7/1353 , G11B7/1374 , G11B7/13922 , G11B2007/0006
摘要： An optical pickup has a first compatible objective and a second compatible objective, the first objective having a diffractive lens structure capable of recording and playback to and from CD and HD DVD, the second objective having a diffractive lens structure capable of recording and playback to and from both DVD and BD. The first objective has the diffractive lens structure that meets the condition of 0.75≦(λ1×m1)/(λ3×m3)≦0.99, where m1 and m3 are diffraction orders of diffracted lights used to read and write CD and HD DVD. The second objective has the diffractive lens structure that meets the condition of 0.75≦(λ4×m4)/(λ2×m2)≦0.99, where m2 and m4 are diffraction orders of diffracted lights used to read and write DVD and BD.
摘要翻译：光学拾取器具有第一兼容物镜和第二兼容物镜，第一物镜具有能够对CD和HD DVD进行记录和再现的衍射透镜结构，第二物镜具有能够记录和回放到其上的衍射透镜结构，从DVD和BD。第一个目标是衍射透镜结构满足0.75 <=（λ1 x m 1）/（λ3 xm 3）<= 0.99的条件，其中m 1和m 3是用于读写的衍射光的衍射级数 CD和HD DVD。第二个目标是衍射透镜结构满足0.75 <=（λ4×m 4）/（λ2×m 2）<= 0.99的条件，其中m 2和m 4是用于读写的衍射光的衍射级 DVD和BD。

52. 发明授权

US07218039B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07218039B2
公开(公告)日：2007-05-15
申请号：US11374784
申请日：2006-03-14
申请人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
发明人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
IPC分类号： H01L41/047 , H03H9/145
CPC分类号： H03H9/14538 , H03H9/009 , H03H9/02094 , H03H9/02897 , H03H9/02929 , H03H9/02944 , H03H9/25 , H03H9/6483
摘要： A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.
摘要翻译：表面声波装置包括压电基板和设置在压电基板上的叉指电极，其中每个叉指电极包括由Cu制成的主电极层或以Cu为主要成分的合金。表面声波装置还包括紧密粘合层，其设置在主电极层和压电基板之间，其主要成分为NiCr，或者主要成分为Ti并且膜厚度在约 18nm至约60nm。

53. 发明授权

US07141909B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07141909B2
公开(公告)日：2006-11-28
申请号：US10834596
申请日：2004-04-29
申请人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
发明人： Takuo Hada , Takeshi Nakao , Michio Kadota , Osamu Nakagawara
IPC分类号： H01L41/047 , H01L41/16 , H03H9/145 , H03H9/25 , H03H9/15
CPC分类号： H03H9/14538 , H03H9/009 , H03H9/02094 , H03H9/02897 , H03H9/02929 , H03H9/02944 , H03H9/25 , H03H9/6483
摘要： A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.
摘要翻译：表面声波装置包括压电基板和设置在压电基板上的叉指电极，其中每个叉指电极包括由Cu制成的主电极层或以Cu为主要成分的合金。表面声波装置还包括紧密粘合层，其设置在主电极层和压电基板之间，其主要成分为NiCr，或者主要成分为Ti并且膜厚度在约 18nm至约60nm。

54. 发明申请

US20060112537A1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US20060112537A1
公开(公告)日：2006-06-01
申请号：US11329460
申请日：2006-01-11
申请人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
发明人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49126 , Y10T29/49128 , Y10T29/49156
摘要： A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
摘要翻译：通过在IDT上形成SiO 2膜来制造具有高机电系数和反射系数以及具有改善的频率温度特性的表面声波器件的制造方法，以防止开裂在SiO 2膜的表面上发生，从而可以可靠地获得期望的性能。表面声波装置包括至少一个IDT，其由密度高于Al的金属或合金构成，并且形成在25°至55°的旋转Y板X传播LiTaO 3上， / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

55. 发明授权

US07034433B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US07034433B2
公开(公告)日：2006-04-25
申请号：US10270207
申请日：2002-10-12
申请人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
发明人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
IPC分类号： H01L41/08
CPC分类号： H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49126 , Y10T29/49128 , Y10T29/49156
摘要： A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
摘要翻译：表面声波装置具有高的机电系数和反射系数，并且还具有通过在IDT上形成SiO 2膜而实现的改善的频率温度特性，以防止在 SiO 2膜的表面，使得可以可靠地获得期望的性能。表面声波装置包括至少一个IDT，其由密度高于Al的金属或合金构成，并且形成在25°至55°的旋转Y板X传播LiTaO 3上， / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

56. 发明授权

US06946930B2 Surface acoustic wave device and electronic device using the same 有权
标题翻译：声表面波装置及使用其的电子装置
公开(公告)号：US06946930B2
公开(公告)日：2005-09-20
申请号：US10132280
申请日：2002-04-26
申请人： Michio Kadota , Takeshi Nakao
发明人： Michio Kadota , Takeshi Nakao
IPC分类号： H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H9/02551 , H03H9/02637 , H03H9/6463 , H03H9/6483
摘要： A reliable SAW device has excellent reflection and a small size, which is achieved by reducing the number of fingers defining reflectors, such that losses due to a large electromechanical coupling coefficient are small and the film thickness of electrodes has much less effect on frequencies of the device. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Al are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, θ, 90°±2°), wherein the angle θ is within the range of about 110° to about 150°, and a normalized film thickness (H/λ) of the fingers is within in the range of about 0.025 to about 0.135.
摘要翻译：可靠的SAW器件具有优异的反射和小尺寸，其通过减少限定反射器的指状物的数量来实现，使得由于大的机电耦合系数导致的损耗小，并且电极的膜厚度对设备。在具有多个第一指状物和第二指状物的SAW器件中，分别配置在石英衬底上，构成用于激发SH波的IDT和用于反射SH波的反射器，主要由Al制成的第一和第二指状物设置在ST （0°，θ，90°±2°）切割的90°X传播石英衬底，其中角度θ在约110°至约150°的范围内，标准化膜厚度（H /λ）在约0.025至约0.135的范围内。

57. 发明申请

US20050184622A1 Surface acoustic wave device and frequency adjustment method of the same 审中-公开
标题翻译：表面声波装置和频率调节方法相同
公开(公告)号：US20050184622A1
公开(公告)日：2005-08-25
申请号：US11097086
申请日：2005-03-31
申请人： Takeshi Nakao , Toshimaro Yoneda , Michio Kadota
发明人： Takeshi Nakao , Toshimaro Yoneda , Michio Kadota
IPC分类号： H03H9/25 , H03H3/10 , H03H9/05 , H03H9/15 , H03H9/64 , H04B1/40 , H03H9/145
CPC分类号： H03H9/6459 , H03H9/1071
摘要： A surface acoustic wave device includes a surface acoustic wave element housed in a main body of a package. The surface acoustic wave element is electrically connected to electrode lands of the package via bonding wires, and the bonding wires are arranged so as not to pass over both of IDTs and reflectors of the surface acoustic wave device.
摘要翻译：表面声波装置包括容纳在封装主体中的表面声波元件。声表面波元件通过接合线电连接到封装的电极焊盘，并且接合线布置成不通过声表面波器件的IDT和反射器两者。

58. 发明授权

US06911881B2 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06911881B2
公开(公告)日：2005-06-28
申请号：US10460299
申请日：2003-06-13
申请人： Daisuke Tamazaki , Takeshi Nakao , Toshimaro Yoneda
发明人： Daisuke Tamazaki , Takeshi Nakao , Toshimaro Yoneda
IPC分类号： H03H9/25 , H03H9/00 , H03H9/02 , H03H9/145 , H03H9/64
CPC分类号： H03H9/0028 , H03H9/02889 , H03H9/02905 , H03H9/6459
摘要： A surface acoustic wave device has first and second surface acoustic wave filter elements which are arranged on a surface acoustic wave substrate so as to define a filter device having a two-stage configuration. A free surface portion is provided by forming a perforation in an inter-stage connecting portion connecting the first and second surface acoustic wave filter elements.
摘要翻译：表面声波装置具有布置在表面声波基板上的第一和第二表面声波滤波器元件，以限定具有两级结构的滤波器装置。通过在连接第一和第二表面声波滤波器元件的级间连接部分中形成穿孔来提供自由表面部分。

59. 发明授权

US06784764B2 End-surface reflection type surface acoustic wave filter 有权
标题翻译：端面反射型表面声波滤波器
公开(公告)号：US06784764B2
公开(公告)日：2004-08-31
申请号：US10218017
申请日：2002-08-14
申请人： Michio Kadota , Hideya Horiuchi , Junya Ago , Takeshi Nakao , Yasuhiro Kuratani
发明人： Michio Kadota , Hideya Horiuchi , Junya Ago , Takeshi Nakao , Yasuhiro Kuratani
IPC分类号： H03H900
CPC分类号： H03H9/02984 , H03H9/02669
摘要： An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.
摘要翻译：端面反射型表面声波滤波器能够增加通带外的衰减量，而插入损耗特性不会严重恶化。滤波器是使用SH型表面声波的纵向耦合的谐振器型表面声波滤波器，其具有在其顶表面上形成在压电基片中的第一和第二凹槽，以便彼此基本平行并彼此间隔开预定距离。另外，设置在用于限定纵向耦合的谐振器型声表面波滤波器的槽之间的IDT，设置在IDT侧的第一和第二槽的侧面的反射端面以及树脂被覆层和由SiO 2制成的保护层设置在压电基板的顶表面上。树脂涂层被设置成至少覆盖IDT所在的区域和第一和第二槽中的至少一个以侵入其中的一个，并且保护层被布置成覆盖 IDT。

60. 发明授权

US06603371B2 Surface acoustic wave device having a small acoustic velocity distribution and method of producing the same 有权
标题翻译：具有较小声速分布的表面声波装置及其制造方法
公开(公告)号：US06603371B2
公开(公告)日：2003-08-05
申请号：US09950419
申请日：2001-09-12
申请人： Takeshi Nakao , Michio Kadota
发明人： Takeshi Nakao , Michio Kadota
IPC分类号： H03H964
CPC分类号： H03H3/08 , H03H9/25 , Y10T29/42
摘要： A surface acoustic wave device includes a piezoelectric substrate, and at least one interdigital transducer disposed thereon which is made of a metal or an alloy that is heavier than Al. The acoustic velocity distribution of surface acoustic waves in the extending direction of electrode fingers of the at least one interdigital transducer is not greater than about 276 ppm, thereby effectively suppressing considerable ripples, which are noticeably found in the group delay time characteristic in particular, within the bandpass area.
摘要翻译：表面声波装置包括压电基片和设置在其上的至少一个叉指换能器，其由比Al重的金属或合金制成。表面声波在至少一个叉指换能器的电极指的延伸方向上的声速分布不大于约276ppm，从而有效地抑制了在组延迟时间特征中明显发现的相当大的波纹，特别是在带通区域。

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