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51. 发明申请

US20090135529A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090135529A1
公开(公告)日：2009-05-28
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及第一屏蔽层和第二屏蔽层，其位于和形成为使得磁阻效应单元夹在它们之间，具有沿层叠方向施加的感测电流。磁阻效应单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层介于它们之间。第一屏蔽层和第二屏蔽层由磁化方向控制装置在磁化方向上控制，并且第一铁磁层和第二铁磁层接收到产生反平行磁化状态的动作，其中相互磁化在第一屏蔽层和第二屏蔽层的磁作用的影响下处于相反方向。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻效应变化，从而可实现更高的可靠性。

52. 发明申请

US20070242396A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 失效
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070242396A1
公开(公告)日：2007-10-18
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

53. 发明申请

US20070183098A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US20070183098A1
公开(公告)日：2007-08-09
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。氧化物的RA范围为0.10欧姆2至0.36欧姆2。

54. 发明授权

US08149546B2 Magnetic field detecting element including tri-layer stack with stepped portion 有权
标题翻译：磁场检测元件包括具有阶梯部分的三层叠层
公开(公告)号：US08149546B2
公开(公告)日：2012-04-03
申请号：US11925030
申请日：2007-10-26
申请人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
发明人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.
摘要翻译：磁场检测元件包括包括上下磁性层的堆叠和夹在其间的非磁性中间层，其中磁性层的磁化根据外部磁场而变化; 上下屏蔽电极层沿层叠方向夹着堆叠，其中上下屏蔽电极层在堆叠方向上提供感测电流，并对堆叠进行磁屏蔽; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏置磁性层在垂直于所述空气轴承表面的方向上向所述上部和下部磁性层施加偏置磁场; 以及设置在堆叠的轨道宽度方向两侧的绝缘层，其中堆叠具有形成在非磁性中间层的台阶部分。

55. 发明授权

US08102736B2 Near-field light generator comprising waveguide with inclined end surface 有权
标题翻译：近场光发生器包括具有倾斜端面的波导
公开(公告)号：US08102736B2
公开(公告)日：2012-01-24
申请号：US12496340
申请日：2009-07-01
申请人： Seiichi Takayama , Daisuke Miyauchi , Susumu Aoki , Koji Shimazawa
发明人： Seiichi Takayama , Daisuke Miyauchi , Susumu Aoki , Koji Shimazawa
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G11B5/3116 , G11B5/3143 , G11B5/6088 , G11B2005/0005 , G11B2005/0021
摘要： Provided is a near-field light generator capable of avoiding a noise to the generated near-field light. The generator comprises a waveguide and a plasmon antenna comprising a propagation surface or edge, for propagating surface plasmon, extending to a near-field light generating end. A portion of one side surface of the waveguide is opposed to a portion of the propagation surface or edge, so as for the waveguide light to be coupled with the plasmon antenna. And an end surface of the waveguide is inclined in such a way as to become away from the plasmon antenna toward the near-field light generating end side. The light that propagates through the waveguide and is not transformed into surface plasmon is refracted or totally reflected in the inclined end surface, does not come close to the generated near-field light, thus does not become a noise for the generated near-field light.
摘要翻译：提供能够避免产生的近场光的噪声的近场光发生器。发生器包括波导和等离子体激元天线，其包括传播表面等离子体的传播表面或边缘，延伸到近场光产生端。波导的一个侧表面的一部分与传播表面或边缘的一部分相对，以使波导光与等离子体激元天线耦合。并且波导的端面以使得等离子体激元离开近场光产生端侧的方式倾斜。通过波导传播并且未被转换成表面等离子体的光在倾斜端面折射或全反射，不会接近所产生的近场光，因此不会产生所产生的近场光的噪声。

56. 发明授权

US07974048B2 Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers 有权
标题翻译：具有与铁磁层耦合的屏蔽层的CPP型磁阻效应器件
公开(公告)号：US07974048B2
公开(公告)日：2011-07-05
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, having a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction.
摘要翻译：本发明提供了一种具有磁阻效应单元的CPP（垂直于平面电流）结构的磁阻效应器件，以及位于和形成为使得磁阻效应单元是第一屏蔽层和第二屏蔽层的第一屏蔽层和第二屏蔽层夹在它们之间，具有沿层叠方向施加的感测电流。

57. 发明授权

US07843668B2 Magnetoresistive element including two ferromagnetic layers 有权
标题翻译：磁阻元件包括两个铁磁层
公开(公告)号：US07843668B2
公开(公告)日：2010-11-30
申请号：US12005274
申请日：2007-12-27
申请人： Takahiko Machita , Kei Hirata , Koji Shimazawa , Daisuke Miyauchi
发明人： Takahiko Machita , Kei Hirata , Koji Shimazawa , Daisuke Miyauchi
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/098 , G11B5/3912 , G11B5/3932 , H01L43/12
摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.
摘要翻译：磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。偏置磁场施加层包括硬磁性层和高饱和磁化层。高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

58. 发明授权

US07656621B2 Magneto-resistive element having a cap layer for canceling spin injection effect 有权
标题翻译：具有用于消除自旋注入效果的盖层的磁阻元件
公开(公告)号：US07656621B2
公开(公告)日：2010-02-02
申请号：US11581478
申请日：2006-10-17
申请人： Koji Shimazawa , Daisuke Miyauchi , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Daisuke Miyauchi , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B2005/3996
摘要： A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.
摘要翻译：磁阻元件具有：具有钉扎层，间隔层和自由层的第一层叠膜组件; 第一电极层，被布置成使得第一层与第一层的另一侧上的第一电极层接触，第一电极层由铁磁材料制成; 以及相对于第一层叠膜组件布置在与第一电极层相对的一侧的第二电极层。第一和第二电极层适于在垂直于层表面的方向上向第一堆叠膜组件和第一层施加感测电流。第一层由金，银，铜，钌，铑，铱，铬或铂或其合金制成。

59. 发明授权

US08385160B2 Magnetic recording element used for thermally-assisted magnetic recording 有权
标题翻译：用于热辅助磁记录的磁记录元件
公开(公告)号：US08385160B2
公开(公告)日：2013-02-26
申请号：US12837725
申请日：2010-07-16
申请人： Shinji Hara , Tsutomu Chou , Tetsuya Roppongi , Daisuke Miyauchi , Kosuke Tanaka
发明人： Shinji Hara , Tsutomu Chou , Tetsuya Roppongi , Daisuke Miyauchi , Kosuke Tanaka
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , B82Y25/00 , G01R33/093 , G02B2006/121 , G11B5/6088 , G11B2005/0021
摘要： A magnetic recording element that faces a recording medium and that executes a magnetic recording while the recording medium is heated, the element including a waveguide that is configured with a core and a cladding, the core, through which laser light propagates, including an enlarged part, which is enlarged at an air bearing surface facing the recording medium; and the cladding surrounding a periphery of the core.
摘要翻译：一种磁记录元件，其面向记录介质并且在记录介质被加热的同时执行磁记录，所述元件包括配置有芯和包层的波导，激光通过该芯体传播，其包括放大部分，其在面向记录介质的空气轴承表面处被扩大; 并且包围围绕芯的周边的包层。

60. 发明申请

US20100149689A1 Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开
公开(公告)号：US20100149689A1
公开(公告)日：2010-06-17
申请号：US12314464
申请日：2008-12-11
申请人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Tsutomu Chou , Daisuke Miyauchi , Shinji Hara , Takahiko Machita , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

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