专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08696808B2 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US08696808B2
公开(公告)日：2014-04-15
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B1/04
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

52. 发明授权

US08445359B2 Manufacturing method and manufacturing apparatus of semiconductor device 有权
公开(公告)号：US08445359B2
公开(公告)日：2013-05-21
申请号：US13161776
申请日：2011-06-16
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46 , H01L29/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.

53. 发明授权

US08212364B2 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance 有权
标题翻译：半导体装置的制造方法以及半导体装置及电器
公开(公告)号：US08212364B2
公开(公告)日：2012-07-03
申请号：US11440116
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2223/54473 , H01L2224/1134 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/92247 , H01L2225/06524 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2224/13099 , H01L2924/00 , H01L2924/3512
摘要： The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.
摘要翻译：本发明涉及一种具有：插入件的半导体器件; 布置在插入器上的布线; 第一芯片，具有第一半导体器件，第一焊盘和位于插入件上的第一焊球，第一半导体器件连接到第一焊盘，第一焊盘连接到第一焊球; 具有第二半导体器件的第二芯片，第二焊盘和位于第一芯片上的第二焊球，第二半导体器件连接到第二焊盘，第二焊盘连接到第二焊球; 以及设置在所述插入件的后侧的端子，其中所述布线和所述第一芯片经由所述第一焊球连接，其中所述第一芯片和所述第二芯片经由所述第二焊球连接，并且所述端子连接到第一个半导体器件。

54. 发明申请

US20120097963A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120097963A1
公开(公告)日：2012-04-26
申请号：US13341045
申请日：2011-12-30
申请人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸出端部延伸的各个晶体区域上形成沟道发泡范围。消除了与沟道形成区域相邻的半导体区域。

55. 发明授权

US08003958B2 Apparatus and method for doping 有权
标题翻译：掺杂的装置和方法
公开(公告)号：US08003958B2
公开(公告)日：2011-08-23
申请号：US12416185
申请日：2009-04-01
申请人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译：提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。

56. 发明授权

US07915099B2 Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：光束照射装置，光束照射方法以及半导体装置的制造方法
公开(公告)号：US07915099B2
公开(公告)日：2011-03-29
申请号：US11785966
申请日：2007-04-23
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , B23K26/082 , B23K26/0821 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.
摘要翻译：由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描开始或结束

57. 发明授权

US07863155B2 Manufacturing method of semiconductor substrate and semiconductor device 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US07863155B2
公开(公告)日：2011-01-04
申请号：US12155053
申请日：2008-05-29
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： It is an object of the present invention to obtain a large-sized SOI substrate by providing a single-crystal silicon layer over a large-sized glass substrate in a large area. After a plurality of rectangular single-crystal semiconductor substrates each provided with a separation layer are aligned over a dummy substrate and both of the substrates are fixed with a low-temperature coagulant, the plurality of single-crystal semiconductor substrates are bonded to a support substrate; the temperature is raised up to a temperature, at which the low-temperature coagulant does not to have a bonding effect, so as to isolate the dummy substrate and the single-crystal semiconductor substrates; heat treatment is performed to separate part of the single-crystal semiconductor substrates, along a boundary of the respective separation layers; and single-crystal semiconductor layers are provided over the support substrate.
摘要翻译：本发明的目的是通过在大面积的大尺寸玻璃基板上设置单晶硅层来获得大尺寸的SOI衬底。在分别设置有分离层的多个矩形单晶半导体基板之后，在虚拟基板上排列两个基板，并用低温凝结剂固定，将多个单晶半导体基板接合到支撑基板 ; 将温度升高到低温凝结剂不具有接合效果的温度，以隔离虚设基板和单晶半导体基板; 执行热处理以沿着各个分离层的边界分离部分单晶半导体衬底; 并且在支撑衬底上设置单晶半导体层。

58. 发明授权

US07842589B2 Laser irradiation apparatus with means for applying magnetic field 有权
标题翻译：具有施加磁场的装置的激光照射装置
公开(公告)号：US07842589B2
公开(公告)日：2010-11-30
申请号：US12627242
申请日：2009-11-30
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/428 , B23K26/12
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

59. 发明授权

US07749907B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07749907B2
公开(公告)日：2010-07-06
申请号：US11841361
申请日：2007-08-20
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L21/461
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

60. 发明授权

US07737054B2 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device 失效
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07737054B2
公开(公告)日：2010-06-15
申请号：US11987050
申请日：2007-11-27
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/073
摘要： A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.
摘要翻译：将连续波振荡的第二激光照射到由具有谐波的脉冲振荡的第一激光熔化的区域中。具体而言，第一激光的波长不比可见光的波长（830nm，优选为780nm以下）。由于半导体膜被第一激光熔化，因此第二激光对半导体膜的吸收系数显着增加，因此第二激光容易被半导体膜吸收。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式